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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EG 1AV1DIODE GEN PURP 600V 600MA AXIAL Sanken |
3,836 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 100 µA @ 600 V | 600 V | 600mA | -40°C ~ 150°C | 2 V @ 600 mA | |
|
RS3MHDIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
2,561 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 500 ns | 10 µA @ 1000 V | 1000 V | 3A (DC) | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
NRVS2MSR SMB GPPN 1.5A 1000V onsemi |
2,580 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2 µs | 1 µA @ 1000 V | 1000 V | 2A | -65°C ~ 150°C | 1.15 V @ 2 A |
|
1N5402-GDIODE GEN PURP 200V 3A DO201AD Comchip Technology |
3,217 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 125°C | 1 V @ 3 A | |
|
|
CDBMT240L-GDIODE SCHOTTKY 40V 2A SOD123 Comchip Technology |
2,343 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 160pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 2A (DC) | -55°C ~ 100°C | 400 mV @ 2 A | |
|
|
BYG23MHM3_A/HDIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
2,066 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
EG01AV1DIODE GEN PURP 600V 500MA AXIAL Sanken |
3,302 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 100 µA @ 600 V | 600 V | 500mA | -40°C ~ 150°C | 2 V @ 500 mA | |
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|
AR1PDHM3/84ADIODE AVALANCHE 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,310 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
|
|
NRVS2BSR SMB GPPN 1.5A 100V onsemi |
3,645 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2 µs | 1 µA @ 100 V | 100 V | 2A | -65°C ~ 150°C | 1.15 V @ 2 A |
|
|
1N5406-GDIODE GEN PURP 600V 3A DO201AD Comchip Technology |
3,295 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 600 V | 600 V | 3A | -65°C ~ 125°C | 1 V @ 3 A | |
|
CDBMT240L-HFDIODE SCHOTTKY 40V 2A SOD123H Comchip Technology |
3,541 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 160pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 2A (DC) | -55°C ~ 100°C | 400 mV @ 2 A | |
|
|
BYG23MHM3_A/IDIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,819 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
EG01V1DIODE GEN PURP 400V 700MA AXIAL Sanken |
2,473 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 50 µA @ 400 V | 400 V | 700mA | -40°C ~ 150°C | 2 V @ 700 mA | |
|
|
AR1PDHM3/85ADIODE AVALANCHE 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,907 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
|
|
NRVS2KSR SMB GPPN 1.5A 800V onsemi |
3,118 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2 µs | 1 µA @ 800 V | 800 V | 2A | -65°C ~ 150°C | 1.15 V @ 2 A |
|
|
1N5407-GDIODE GEN PURP 800V 3A DO201AD Comchip Technology |
2,870 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 800 V | 800 V | 3A | -65°C ~ 125°C | 1 V @ 3 A | |
|
|
SS2H9HE3_A/HDIODE SCHOTTKY 90V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,993 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q100 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 90 V | 90 V | 2A | -65°C ~ 175°C | 790 mV @ 2 A |
|
VS-2EJH01-M3/6ADIODE GEN PURP 100V 2A DO221AC Vishay General Semiconductor - Diodes Division |
2,355 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 930 mV @ 2 A |
|
SS3P4LHM3_A/IDIODE SCHOTTKY 40V 3A TO277A Vishay General Semiconductor - Diodes Division |
2,797 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 470 mV @ 3 A |
|
|
AR1PGHM3/84ADIODE AVALANCHE 400V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,921 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
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