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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CRF03A,LQ(MMOSFET N-CH Toshiba Semiconductor and Storage |
2,365 | - |
RFQ |
Ficha técnica |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 50 µA @ 600 V | 600 V | 700mA | 150°C | 2 V @ 700 mA | |
|
HER304-APDIODE GPP HE 3A DO-201AD Micro Commercial Co |
2,836 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 80pF @ 4V, 1MHz | 50 ns | - | 300 V | 3A | -55°C ~ 150°C | - | |
|
1N5393GDIODE GEN PURP 1.5A 200V DO-15 Taiwan Semiconductor Corporation |
3,089 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1.5A (DC) | -55°C ~ 150°C | 1 V @ 1.5 A | ||
|
JANTX1N6677UR-1/TRDIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
2,934 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/610 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 5 µA @ 40 V | 40 V | 200mA | -65°C ~ 125°C | 500 mV @ 200 mA | |
|
|
RB751S-40GTE61DIODE SCHOTTKY SMD Rohm Semiconductor |
3,404 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
1N5392-APDIODE GPP 1.5A DO-15 Micro Commercial Co |
2,220 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 20pF @ 4V, 1MHz | - | - | 100 V | 1.5A | -55°C ~ 150°C | - | |
|
|
CRG04A,LQ(MMOSFET N-CH Toshiba Semiconductor and Storage |
2,885 | - |
RFQ |
Ficha técnica |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 600 V | 600 V | 1A | 150°C | 1.1 V @ 1 A | |
|
|
HER305-APDIODE GPP HE 3A DO-201AD Micro Commercial Co |
3,767 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 80pF @ 4V, 1MHz | 50 ns | - | 400 V | 3A | -55°C ~ 150°C | - | |
|
|
SR203HDIODE SCHOTTKY 2A 30V TO220AB Taiwan Semiconductor Corporation |
2,178 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 2A (DC) | -55°C ~ 125°C | 550 mV @ 2 A | |
|
SK215AHM2GDIODE SCHOTTKY 150V 2A DO214AC Taiwan Semiconductor Corporation |
3,914 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
UG4A-M3/54DIODE GEN PURP 50V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,964 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
|
S3DC-HFRECTIFIER GEN PURP 200V 3A SMC Comchip Technology |
3,079 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | ||
|
|
SS36HDIODE GEN PURP 60V 3A DO214AB Taiwan Semiconductor Corporation |
2,505 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A (DC) | -55°C ~ 150°C | 750 mV @ 3 A | |
|
CDBB2200LR-HFDIODE SCHOTTKY 200V 2A DO214AA Comchip Technology |
3,287 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 30pF @ 4V, 1MHz | - | 500 µA @ 200 V | 200 V | 2A | -50°C ~ 175°C | 850 mV @ 2 A | |
|
|
UG4B-E3/54DIODE GEN PURP 100V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,918 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
RS1AHE3_A/HDIODE GEN PURP 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,730 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
UG4B-M3/54DIODE GEN PURP 100V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,894 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
|
S3MC-HFRECTIFIER GEN PURP 1000V 3A SMC Comchip Technology |
2,284 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | ||
|
ES1BL RUGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,735 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
B350Q-13-FDIODE SCHOTTKY 50V 3A SMC Diodes Incorporated |
2,823 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 700 mV @ 3 A |
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