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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AU02WKDIODE GEN PURP 400V 800MA AXIAL Sanken |
2,210 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 800mA | -40°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
EU02DIODE GEN PURP 400V 1A AXIAL Sanken |
3,625 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 1.4 V @ 1 A | |
|
|
AB01BDIODE GEN PURP 800V 500MA AXIAL Sanken |
3,494 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 10 µA @ 800 V | 800 V | 500mA | -40°C ~ 150°C | 2 V @ 500 mA | |
|
SURA8220T3GDIODE GEN PURP 200V 2A SMA onsemi |
2,598 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 950 mV @ 2 A | |
|
ES5G-T M6G35NS, 5A, 400V, SUPER FAST RECOV Taiwan Semiconductor Corporation |
2,505 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 123pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 5A (DC) | -55°C ~ 150°C | 1.3 V @ 5 A | |
|
NRVTS6100PFST3G100V 6A TRENCH SCHOTTKY onsemi |
2,733 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 827pF @ 1V, 1MHz | - | 50 µA @ 100 V | 100 V | 6A (DC) | -55°C ~ 175°C | 680 mV @ 6 A | |
|
|
AU02WSDIODE GEN PURP 400V 800MA AXIAL Sanken |
2,149 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 800mA | -40°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
EU02ADIODE GEN PURP 600V 1A AXIAL Sanken |
2,547 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 1.4 V @ 1 A | |
|
|
AG01DIODE GEN PURP 400V 700MA AXIAL Sanken |
2,287 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 100 µA @ 400 V | 400 V | 700mA | -40°C ~ 150°C | 1.8 V @ 700 mA | |
|
SR310HR0GDIODE SCHOTTKY 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,795 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
|
VSSB7L45-M3/5BTDIODE SCHOTTKY 45V 3.8A DO214AA Vishay General Semiconductor - Diodes Division |
2,113 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1068pF @ 4V, 1MHz | - | 1.6 mA @ 45 V | 45 V | 3.8A (DC) | -40°C ~ 150°C | 430 mV @ 3.5 A |
|
HS3FB R5GDIODE GEN PURP 300V 3A DO214AA Taiwan Semiconductor Corporation |
2,960 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
AU02ZV0DIODE GEN PURP 200V 800MA AXIAL Sanken |
3,182 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 200 V | 200 V | 800mA | -40°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
RM 1CV1DIODE GEN PURP 1KV 800MA AXIAL Sanken |
3,569 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 800 V | 1000 V | 800mA | -40°C ~ 150°C | 1.2 V @ 1 A | |
|
|
AG01ADIODE GEN PURP 600V 500MA AXIAL Sanken |
2,299 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 100 µA @ 600 V | 600 V | 500mA | -40°C ~ 150°C | 1.8 V @ 600 mA | |
|
|
SR315HR0GDIODE SCHOTTKY 150V 3A DO201AD Taiwan Semiconductor Corporation |
2,789 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
|
|
AS3BD-M3/HDIODE AVALANCHE 200V 3A DO214AA Vishay General Semiconductor - Diodes Division |
3,046 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 20 µA @ 600 V | 200 V | 3A (DC) | -55°C ~ 175°C | 1.05 V @ 3 A | |
|
|
HS3GB R5GDIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation |
2,862 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
AU02ZWKDIODE GEN PURP 200V 800MA AXIAL Sanken |
3,175 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 200 V | 200 V | 800mA | -40°C ~ 150°C | 1.3 V @ 800 mA | |
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|
SJPA-H3VDIODE SCHOTTKY 30V 2A SJP Sanken |
3,286 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3 mA @ 30 V | 30 V | 2A | -40°C ~ 125°C | 360 mV @ 2 A |
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