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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JTX1N6073D MET 1.5A SFST 50V HR Semtech Corporation |
2,633 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
1N5806USE3/TRUFR,FRR Microchip Technology |
2,978 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 1A | -65°C ~ 175°C | 975 mV @ 2.5 A | |
|
VS-8EWF04STR-M3DIODE GEN PURP 400V 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,992 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 55 ns | 100 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |
|
|
JAN1N5615D MET 1A FAST 200V Semtech Corporation |
2,028 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 5V, 1MHz | 150 ns | 500 nA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
BAS21M3T5GDIODE GEN PURP 250V 200MA SOT723 onsemi |
2,184 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 250 V | 200mA (DC) | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
MCL103B-TR3DIODE SCHOTTKY 30V 200MA MICMELF Vishay General Semiconductor - Diodes Division |
3,003 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 5 µA @ 20 V | 30 V | 200mA | 125°C (Max) | 600 mV @ 200 mA |
|
|
SDM05U20S3-7DIODE SCHOTTKY 20V 500MA SOD323 Diodes Incorporated |
2,465 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 10pF @ 5V, 1MHz | - | 160 µA @ 20 V | 20 V | 500mA | -55°C ~ 150°C | 390 mV @ 500 mA | |
|
|
NSVBAS21M3T5GDIODE GEN PURP 250V 200MA SOT723 onsemi |
3,316 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 250 V | 200mA (DC) | -55°C ~ 150°C | 1.25 V @ 200 mA |
|
SS22SHE3_B/HDIODE SCHOTTKY 20V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,184 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A |
|
RB531VM-40TE-17DIODE SCHOTTKY 40V 100MA UMD2 Rohm Semiconductor |
2,592 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 100mA | 150°C (Max) | 610 mV @ 100 mA | |
|
|
SS22SHE3_B/IDIODE SCHOTTKY 20V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,973 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A |
|
|
RB531VM-30TE-17DIODE SCHOTTKY 30V 100MA UMD2 Rohm Semiconductor |
2,313 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 45 µA @ 30 V | 30 V | 100mA | 125°C (Max) | 490 mV @ 100 mA | |
|
US1KHM2GDIODE GEN PURP 800V 1A DO214AC Taiwan Semiconductor Corporation |
3,646 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
S1D-E3/5ATDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,154 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
US1MHM2GDIODE GEN PURP 1A DO214AC Taiwan Semiconductor Corporation |
3,292 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
CDBQC0240LR-HFDIODE SCHOTTKY 40V 200MA 0402C Comchip Technology |
2,490 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 25pF @ 1V, 1MHz | - | 5 µA @ 40 V | 40 V | 200mA | -55°C ~ 150°C | 580 mV @ 200 mA | |
|
BAT760FDIODE SCHOTTKY 20V 1A SOD323 Nexperia USA Inc. |
3,523 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 25pF @ 5V, 1MHz | - | 50 µA @ 15 V | 20 V | 1A (DC) | 125°C (Max) | 550 mV @ 1 A | |
|
SD101AWS-E3-18DIODE SCHOTTKY 150MW 60V SOD323 Vishay General Semiconductor - Diodes Division |
3,737 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 1 ns | 200 nA @ 50 V | 60 V | 30mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA | |
|
JANTX1N6622DIODE GEN PURP 660V 2A AXIAL Microchip Technology |
3,163 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 10V, 1MHz | 30 ns | 500 nA @ 660 V | 660 V | 2A | -65°C ~ 150°C | 1.4 V @ 1.2 A |
|
V2FM10-M3/I2A,100V,SMF,TRENCH SKY RECT. Vishay General Semiconductor - Diodes Division |
2,116 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 150pF @ 4V, 1MHz | - | 55 µA @ 100 V | 100 V | 2A | -40°C ~ 175°C | 830 mV @ 2 A |
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