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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FR305G R0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
2,405 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
PMEG050T150EPDAZDIODE SCHOTTKY 50V 15A CFP15 Nexperia USA Inc. |
3,669 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 800pF @ 10V, 1MHz | 60 ns | 100 µA @ 50 V | 50 V | 15A | 175°C (Max) | 550 mV @ 15 A |
|
SS26 R5GDIODE SCHOTTKY 60V 2A DO214AA Taiwan Semiconductor Corporation |
2,141 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
|
RS2KHE3_A/HDIODE GEN PURP 800V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,129 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
V15PM12HM3/IDIODE SCHOTTKY 120V 15A TO277A Vishay General Semiconductor - Diodes Division |
2,637 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 800 µA @ 120 V | 120 V | 15A | -40°C ~ 150°C | 840 mV @ 15 A |
|
CRSH25-4DIODE SCHOTTKY 25A 40V DO-4 Central Semiconductor Corp |
3,912 | - |
RFQ |
Ficha técnica |
Box | CRSH25-4 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Stud Mount | - | - | 2 mA @ 40 V | 40 V | 25A | -55°C ~ 175°C | 580 mV @ 25 A |
|
|
CDBHA15100-HFDIODE SCHOTTKY 100V 15A TO-277B Comchip Technology |
3,799 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 100 V | 100 V | 15A | -55°C ~ 150°C | 700 mV @ 15 A | |
|
|
SS35 R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,519 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 750 mV @ 3 A | ||
|
|
FR306G R0GDIODE GEN PURP 800V 3A DO201AD Taiwan Semiconductor Corporation |
3,086 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
PMEG045T150EPDZDIODE SCHOTTKY 45V 15A CFP15 Nexperia USA Inc. |
2,614 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 800pF @ 10V, 1MHz | 20 ns | 100 µA @ 45 V | 45 V | 15A | 175°C (Max) | 550 mV @ 15 A |
|
PMEG120G30ELPJPMEG120G30ELP/SOD128/FLATPOWER Nexperia USA Inc. |
2,860 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | SiGe (Silicon Germanium) | Obsolete | Surface Mount | 103pF @ 1V, 1MHz | 11 ns | 30 nA @ 120 V | 120 V | 3A | 175°C (Max) | 840 mV @ 3 A |
|
SBR3U100LP-7DIODE SBR 100V 3A 8DFN Diodes Incorporated |
2,033 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SBR® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Super Barrier | Active | Surface Mount | - | - | 200 µA @ 100 V | 100 V | 3A | -65°C ~ 150°C | 790 mV @ 3 A |
|
|
ESH3D M6DIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
2,742 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | ||
|
|
RS2KHE3_A/IDIODE GEN PURP 800V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,905 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
|
PMEG120G20ELPJPMEG120G20ELP/SOD128/FLATPOWER Nexperia USA Inc. |
3,129 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | SiGe (Silicon Germanium) | Obsolete | Surface Mount | 75pF @ 1V, 1MHz | 11 ns | 30 nA @ 120 V | 120 V | 2A | 175°C (Max) | 840 mV @ 2 A |
|
|
FSQS10A045DIODE SCHOTTKY 45V 10A TO-220 2P KYOCERA AVX |
2,425 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 600 µA @ 45 V | 45 V | 10A | -40°C ~ 150°C | 540 mV @ 10 A | |
|
|
S12JC R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,418 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 12A (DC) | -55°C ~ 150°C | 1.1 V @ 12 A | ||
|
|
SD060SA30A.T1PIV 30V IO 3A CHIP SIZE 60MIL SQ SMC Diode Solutions |
3,412 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 220pF @ 5V, 1MHz | - | 400 µA @ 30 V | 30 V | 3A | -55°C ~ 150°C | 490 mV @ 3 A | |
|
|
S5J R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,706 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
|
|
FR307G R0GDIODE GEN PURP 3A DO201AD Taiwan Semiconductor Corporation |
3,783 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.3 V @ 3 A |
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