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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
CTLSH10-60M856 TR13 TRANSISTOR Central Semiconductor Corp	3,673	-	RFQ		Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	500 µA @ 60 V	60 V	10A	-65°C ~ 150°C	670 mV @ 10 A
1A4 DIODE GEN PURP 1000V 1A R-1 Rectron USA	2,334	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	1 µA @ 1000 V	1000 V	1A	-55°C ~ 150°C	1 V @ 1 A
CTLSH1-40M322 TR TRANSISTOR Central Semiconductor Corp	2,651	-	RFQ		Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	50pF @ 4V, 1MHz	15 ns	200 µA @ 40 V	40 V	1A (DC)	-65°C ~ 150°C	550 mV @ 1 A
1N5400G DIODE GP GLASS 50V 3A DO-201AD Rectron USA	2,251	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	-	500 nA @ 50 V	50 V	3A	-55°C ~ 150°C	980 mV @ 3 A
CTLSH1-40M322 BK TRANSISTOR Central Semiconductor Corp	3,303	-	RFQ		Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	50pF @ 4V, 1MHz	15 ns	200 µA @ 40 V	40 V	1A (DC)	-65°C ~ 150°C	550 mV @ 1 A
05A5L DIODE .5A 600V SOD-123F Rectron USA	3,764	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 4V, 1MHz	-	1 µA @ 600 V	600 V	500mA	-55°C ~ 150°C	1 V @ 500 mA
CLLR1-06 TR13 TRANSISTOR Central Semiconductor Corp	2,910	-	RFQ		Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	10 µA @ 600 V	600 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
RL153 DIODE GEN PURP 1000V 1.5A DO-15 Rectron USA	3,257	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	-	1 µA @ 1000 V	1000 V	1.5A	-55°C ~ 150°C	1 V @ 1.5 A
CR250-2 TR TRANSISTOR Central Semiconductor Corp	3,556	-	RFQ		Bulk	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Obsolete	Through Hole	30pF @ 4V, 1MHz	-	5 µA @ 2000 V	2000 V	200mA	-65°C ~ 150°C	3 V @ 200 mA
05A3L DIODE .5A 200V SOD-123F Rectron USA	2,009	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 4V, 1MHz	-	1 µA @ 200 V	200 V	500mA	-55°C ~ 150°C	1 V @ 500 mA
CLLR1F-02 BK TRANSISTOR Central Semiconductor Corp	3,376	-	RFQ		Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	150 ns	5 µA @ 200 V	200 V	1A	-65°C ~ 175°C	1.3 V @ 1 A
1N5407 DIODE GEN PURP 1000V 3A DO-201AD Rectron USA	2,853	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	-	200 nA @ 1000 V	1000 V	3A	-55°C ~ 150°C	1 V @ 3 A
1N6263 TR4K TRANSISTOR Central Semiconductor Corp	2,136	-	RFQ		Bulk	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Obsolete	Through Hole	2.2pF @ 0V, 1MHz	-	200 nA @ 50 V	60 V	15mA	-65°C ~ 200°C	1 V @ 15 mA
CR6A4 TR TRANSISTOR Central Semiconductor Corp	2,121	-	RFQ		Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	-	1 µA @ 400 V	400 V	6A	-65°C ~ 175°C	1 V @ 6 A
BAS216,115 DIODE GEN PURP 75V 250MA SOD2 NXP USA Inc.	2,196	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	1.5pF @ 0V, 1MHz	4 ns	1 µA @ 75 V	75 V	250mA (DC)	150°C (Max)	1.25 V @ 150 mA
BY229-600,127 DIODE GEN PURP 500V 8A TO220AC NXP USA Inc.	2,620	-	RFQ	Ficha técnica	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	135 ns	400 µA @ 500 V	500 V	8A	150°C (Max)	1.85 V @ 20 A
BY229X-200,127 DIODE GEN PURP 150V 8A TO220F NXP USA Inc.	2,512	-	RFQ	Ficha técnica	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	135 ns	400 µA @ 150 V	150 V	8A	150°C (Max)	1.85 V @ 20 A
BY229X-600,127 DIODE GEN PURP 500V 8A TO220F NXP USA Inc.	2,699	-	RFQ	Ficha técnica	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	135 ns	400 µA @ 500 V	500 V	8A	150°C (Max)	1.85 V @ 20 A
BY229X-800,127 DIODE GEN PURP 600V 8A TO220F NXP USA Inc.	3,961	-	RFQ	Ficha técnica	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	135 ns	400 µA @ 600 V	600 V	8A	150°C (Max)	1.85 V @ 20 A
1PS59SB10,115 DIODE SCHOTTKY 30V 200MA SMT3 NXP USA Inc.	3,706	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Obsolete	Surface Mount	10pF @ 1V, 1MHz	5 ns	2 µA @ 25 V	30 V	200mA (DC)	125°C (Max)	800 mV @ 100 mA