Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
NTE5809

NTE5809

R-1000 PRV 3A AXIAL LEAD

NTE Electronics, Inc
13,922 -

RFQ

NTE5809

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 500 µA @ 1000 V 1000 V 3A -65°C ~ 175°C 1.2 V @ 9.4 A
SBR0560S1-7

SBR0560S1-7

DIODE SBR 60V 500MA SOD123

Diodes Incorporated
978 -

RFQ

SBR0560S1-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SBR® RoHS Fast Recovery =< 500ns, > 200mA (Io) Super Barrier Active Surface Mount - - 100 µA @ 60 V 60 V 500mA -65°C ~ 150°C 500 mV @ 500 mA
1N5804

1N5804

RECT 2.5 AMP 100V DO204AP

Solid State Inc.
4,910 -

RFQ

1N5804

Ficha técnica

Box RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 1 µA @ 100 V 100 V 2.5A -65°C ~ 175°C 875 mV @ 1 A
RF071MM2STR

RF071MM2STR

DIODE GEN PURP 200V 700MA PMDU

Rohm Semiconductor
1,432 -

RFQ

RF071MM2STR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 10 µA @ 200 V 200 V 700mA 150°C (Max) 850 mV @ 700 mA
1N5806

1N5806

DO-204AP 2.5 AMP RECTIFIER

Solid State Inc.
3,240 -

RFQ

1N5806

Ficha técnica

Box RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 1 µA @ 150 V 150 V 2.5A -65°C ~ 175°C 875 mV @ 1 A
1N4148

1N4148

DIODE GEN PURP 100V 200MA DO35

onsemi
1,072,758 -

RFQ

1N4148

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 4 ns 5 µA @ 75 V 100 V 200mA -65°C ~ 175°C 1 V @ 10 mA
RURP3015

RURP3015

RECTIFIER DIODE

Rochester Electronics, LLC
1,502 -

RFQ

RURP3015

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 50 ns 500 µA @ 150 V 150 V 30A -55°C ~ 175°C 1 V @ 30 A
SS14-E3/61T

SS14-E3/61T

DIODE SCHOTTKY 40V 1A DO214AC

Vishay General Semiconductor - Diodes Division
83,733 -

RFQ

SS14-E3/61T

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 40 V 40 V 1A -65°C ~ 125°C 500 mV @ 1 A
RURP3040

RURP3040

RECTIFIER DIODE

Rochester Electronics, LLC
5,159 -

RFQ

RURP3040

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 60 ns 500 µA @ 400 V 400 V 30A -55°C ~ 175°C 1.5 V @ 30 A
UF4007

UF4007

DIODE GEN PURP 1KV 1A DO41

onsemi
190,858 -

RFQ

UF4007

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 10 µA @ 1000 V 1000 V 1A -65°C ~ 150°C 1.7 V @ 1 A
HERF1007GAHC0G

HERF1007GAHC0G

DIODE, HIGH EFFICIENT

Taiwan Semiconductor Corporation
1,701 -

RFQ

HERF1007GAHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 80 ns 10 µA @ 800 V 800 V 10A -55°C ~ 150°C 1.7 V @ 5 A
B260-13-F

B260-13-F

DIODE SCHOTTKY 60V 2A SMB

Diodes Incorporated
90,668 -

RFQ

B260-13-F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 200pF @ 4V, 1MHz - 500 µA @ 60 V 60 V 2A -65°C ~ 150°C 700 mV @ 2 A
RURP3050

RURP3050

RECTIFIER DIODE

Rochester Electronics, LLC
773 -

RFQ

RURP3050

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 60 ns 500 µA @ 500 V 500 V 30A -55°C ~ 175°C 1.5 V @ 30 A
SD0805S040S0R5

SD0805S040S0R5

DIODE SCHOTTKY 40V 500MA 0805

KYOCERA AVX
3,542 -

RFQ

SD0805S040S0R5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 40 V 40 V 500mA (DC) -55°C ~ 125°C 480 mV @ 500 mA
BYP60K1

BYP60K1

DIODE STD D13X10.7W 100V 60A

Diotec Semiconductor
12,000 -

RFQ

BYP60K1

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 100 µA @ 100 V 100 V 60A -50°C ~ 200°C 1.1 V @ 60 A
S07J-GS08

S07J-GS08

DIODE GEN PURP 600V 1.5A DO219AB

Vishay General Semiconductor - Diodes Division
7,395 -

RFQ

S07J-GS08

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 4V, 1MHz 1.8 µs 10 µA @ 600 V 600 V 700mA -55°C ~ 150°C 1.1 V @ 1 A
BYP60A6

BYP60A6

DIODE STD D13X10.7W 600V 60A

Diotec Semiconductor
12,000 -

RFQ

BYP60A6

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 100 µA @ 600 V 600 V 60A -50°C ~ 200°C 1.1 V @ 60 A
ES1J

ES1J

DIODE GEN PURP 600V 1A SMA

onsemi
368,676 -

RFQ

ES1J

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 0V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A 150°C (Max) 1.7 V @ 1 A
BYP60A3

BYP60A3

DIODE STD D13X10.7W 300V 60A

Diotec Semiconductor
12,000 -

RFQ

BYP60A3

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 100 µA @ 300 V 300 V 60A -50°C ~ 200°C 1.1 V @ 60 A
S2M

S2M

DIODE GEN PURP 1KV 2A DO214AA

onsemi
112,624 -

RFQ

S2M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 2 µs 1 µA @ 1000 V 1000 V 2A -65°C ~ 150°C 1.15 V @ 2 A
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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