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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SJPL-L4VRDIODE GEN PURP 400V 3A SJP Sanken |
6,910 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 50 µA @ 400 V | 400 V | 3A | -40°C ~ 150°C | 1.3 V @ 3 A | |
|
SS1H9-E3/61TDIODE SCHOTTKY 90V 1A DO214AC Vishay General Semiconductor - Diodes Division |
21,435 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 µA @ 90 V | 90 V | 1A | 175°C (Max) | 770 mV @ 1 A | |
|
SR302 A0GDIODE SCHOTTKY 20V 3A DO201AD Taiwan Semiconductor Corporation |
3,000 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | 550 mV @ 3 A | |
|
|
SS1H10-E3/61TDIODE SCHOTTKY 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,862 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 µA @ 100 V | 100 V | 1A | 175°C (Max) | 770 mV @ 1 A | |
|
BAS21HT3GDIODE GEN PURP 250V 200MA SOD323 onsemi |
10,640 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 250 V | 200mA (DC) | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
UF4002 TRDIODE GEN PURP 100V 1A DO41 Central Semiconductor Corp |
4,586 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 20pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 1 V @ 1 A | |
|
BAS70LSYLGENERAL-PURPOSE SCHOTTKY DIODE I Nexperia USA Inc. |
3,857 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | - | 10 µA @ 70 V | 70 V | 70mA (DC) | 150°C | 1 V @ 15 mA | |
|
1N4934RLGDIODE GEN PURP 100V 1A DO41 onsemi |
2,663 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A | |
|
VSKY20301608-G4-08DIODE SCHOTTKY 30V 2A 0603 Vishay General Semiconductor - Diodes Division |
37,956 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 375pF @ 0V, 1MHz | - | 150 µA @ 30 V | 30 V | 2A | 125°C (Max) | 530 mV @ 2 A | |
|
ACDSW4448-HFDIODE GEN PURP 75V 200MA SOD123 Comchip Technology |
2,468 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 2.5 µA @ 75 V | 75 V | 200mA | -55°C ~ 150°C | 1.25 V @ 150 mA |
|
|
VSKY20401608-G4-08DIODE SCHOTTKY 40V 2A CLP1608-2L Vishay General Semiconductor - Diodes Division |
10,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 340pF @ 0V, 1MHz | - | 150 µA @ 40 V | 40 V | 2A | 125°C (Max) | 580 mV @ 2 A | |
|
PMEG2005EGWJDIODE SCHOTTKY 20V 500MA SOD123 Nexperia USA Inc. |
1,613 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 66pF @ 1V, 1MHz | - | 200 µA @ 20 V | 20 V | 500mA | 150°C (Max) | 390 mV @ 500 mA |
|
BAT48DIODE SCHOTTKY 40V 350MA DO35 STMicroelectronics |
30,570 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 20pF @ 0V, 1MHz | - | 25 µA @ 40 V | 40 V | 350mA (DC) | -65°C ~ 125°C | 750 mV @ 200 mA | |
|
CDSF4448-HFDIODE GEN PURP 80V 125MA 1005 Comchip Technology |
1,478 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | 9pF @ 500mV, 1MHz | 9 ns | 100 nA @ 80 V | 80 V | 125mA | -40°C ~ 125°C | 1 V @ 100 mA | |
|
RB168MM-30TRRB168MM-30 IS SUPER LOW IR Rohm Semiconductor |
3,943 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 nA @ 30 V | 30 V | 1A | 150°C (Max) | 690 mV @ 1 A | |
|
V12PM45-M3/HDIODE SCHOTTKY TMBS 12A 45V SMPC Vishay General Semiconductor - Diodes Division |
2,935 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2350pF @ 4V, 1MHz | - | 500 µA @ 45 V | 45 V | 12A | -40°C ~ 175°C | 600 mV @ 12 A |
|
RS2AA-13-FDIODE GEN PURP 50V 1.5A SMA Diodes Incorporated |
36,739 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -65°C ~ 150°C | 1.3 V @ 1.5 A | |
|
SS36-M3/57TDIODE SCHOTTKY 3A 60V DO-214AB Vishay General Semiconductor - Diodes Division |
2,809 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A | |
|
HSM190JE3/TR13DIODE SCHOTTKY 90V 1A DO214BA Microchip Technology |
3,709 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 175°C | 840 mV @ 1 A | |
|
|
31DF6DIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
2,116 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 20 µA @ 600 V | 600 V | 3A | -40°C ~ 150°C | 1.7 V @ 3 A |
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