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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NSB8ATHE3_B/IDIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,706 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
HS2K R5GDIODE GEN PURP 800V 2A DO214AA Taiwan Semiconductor Corporation |
2,450 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
SS10PH45-M3/87ADIODE SCHOTTKY 45V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,134 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 270pF @ 4V, 1MHz | - | 80 µA @ 45 V | 45 V | 10A | -55°C ~ 175°C | 720 mV @ 10 A |
|
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V25PL60-M3/87ADIODE SCHOTTKY 60V 5.5A TO277A Vishay General Semiconductor - Diodes Division |
2,318 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 4 mA @ 60 V | 60 V | 5.5A | -40°C ~ 150°C | 630 mV @ 25 A |
|
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AR4PK-M3/87ADIODE AVALANCHE 800V 1.8A TO277A Vishay General Semiconductor - Diodes Division |
2,190 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 800 V | 800 V | 1.8A (DC) | -55°C ~ 175°C | 1.9 V @ 4 A |
|
ES3B-M3/9ATDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,994 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
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NSB8BTHE3_B/IDIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,401 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
VS-6ESH06HM3/87ADIODE GEN PURP 600V 6A TO277A Vishay General Semiconductor - Diodes Division |
3,024 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 5 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 1.8 V @ 6 A |
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BYM13-20HE3/96DIODE SCHOTTKY 20V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,918 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
CMR1U-10 BK PBFREEDIODE GEN PURP 1KV 1A SMB Central Semiconductor Corp |
3,516 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.7 V @ 1 A | |
|
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AR4PM-M3/87ADIODE AVALANCHE 1KV 1.8A TO277 Vishay General Semiconductor - Diodes Division |
2,828 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 1000 V | 1000 V | 1.8A (DC) | -55°C ~ 175°C | 1.9 V @ 4 A |
|
|
ES3C-M3/9ATDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,591 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
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NSB8DTHE3_B/IDIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,472 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
VS-6ESU06HM3/87ADIODE GEN PURP 600V 6A TO277A Vishay General Semiconductor - Diodes Division |
2,585 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 58 ns | 5 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 1.3 V @ 6 A |
|
|
BYM13-30HE3/96DIODE SCHOTTKY 30V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,510 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
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FES8FT-E3/45DIODE GEN PURP 300V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,794 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
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AR4PM-M3/86ADIODE AVALANCHE 1KV 1.8A TO277 Vishay General Semiconductor - Diodes Division |
2,440 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 55pF @ 4V, 1MHz | 120 ns | 10 µA @ 1000 V | 1000 V | 1.8A (DC) | -55°C ~ 175°C | 1.9 V @ 4 A |
|
|
ES3D-M3/9ATDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,819 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
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NSB8GTHE3_B/IDIODE GEN PURP 400V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,776 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
RB521ZS-30T2RDIODE SCHOTTKY 30V 100MA GMD2 Rohm Semiconductor |
2,727 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | - | - | 7 µA @ 10 V | 30 V | 100mA | 150°C (Max) | 370 mV @ 10 mA |
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