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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SS2FH10-M3/IDIODE SCHOTTKY 100V 2A DO-219AB Vishay General Semiconductor - Diodes Division |
3,098 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 70pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 860 mV @ 2 A |
|
B0540WSHE3-TPDIODE SCHOTTKY 40V 500MA SOD323 Micro Commercial Co |
2,002 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 30pF @ 4V, 1MHz | - | 80 µA @ 40 V | 40 V | 500mA | -55°C ~ 125°C | 550 mV @ 500 mA |
|
UF1005-M3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,713 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | - | 600 V | 1A | -65°C ~ 150°C | 1.7 V @ 1 A | ||
|
B0530WSHE3-TPDIODE SCHOTTKY 30V 500MA SOD323 Micro Commercial Co |
6,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 30pF @ 4V, 1MHz | - | 300 µA @ 30 V | 30 V | 500mA | -55°C ~ 125°C | 550 mV @ 500 mA |
|
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UF1006-M3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,562 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 125°C | 1.7 V @ 1 A | ||
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DHG60I1200HADIODE GEN PURP 1.2KV 60A TO247AD IXYS |
2,927 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 125 µA @ 1200 V | 1200 V | 60A | -55°C ~ 150°C | 2.32 V @ 60 A | |
|
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SBA0820AS_R1_00001EXTREME LOW VF SCHOTTKY RECTIFIE Panjit International Inc. |
3,670 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 20 V | 20 V | 800mA | -55°C ~ 150°C | 550 mV @ 800 mA | ||
|
VSSA36S-M3/5ATDIODE SCHOTTKY 60V 2.4A DO214AC Vishay General Semiconductor - Diodes Division |
3,664 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 245pF @ 4V, 1MHz | - | 900 µA @ 60 V | 60 V | 2.4A | -55°C ~ 150°C | 630 mV @ 3 A |
|
|
UES1101RECTIFIER Microchip Technology |
3,752 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | - | 50 V | 2A | -55°C ~ 175°C | 975 mV @ 2 A | ||
|
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SBA0840AS_R1_00001EXTREME LOW VF SCHOTTKY RECTIFIE Panjit International Inc. |
3,309 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 40 V | 40 V | 800mA | -55°C ~ 150°C | 700 mV @ 800 mA | ||
|
|
JANTXV1N6624DIODE GEN PURP 990V 1A D5A Microchip Technology |
3,978 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 500 nA @ 990 V | 990 V | 1A | -65°C ~ 150°C | 1.55 V @ 1 A |
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SE15PB-M3/85ADIODE GEN PURP 100V 1.5A DO220AA Vishay General Semiconductor - Diodes Division |
3,553 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9.5pF @ 4V, 1MHz | 900 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 175°C | 1.05 V @ 1.5 A |
|
JANTX1N6625DIODE GEN PURP 1.1KV 1A AXIAL Microchip Technology |
2,324 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 10V, 1MHz | 60 ns | 500 nA @ 1100 V | 1100 V | 1A | -65°C ~ 150°C | 1.75 V @ 1 A |
|
VS-12FLR40S02DIODE GEN PURP 400V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,635 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 50 µA @ 400 V | 400 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
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JAN1N4148UBDIODE GEN PURP 75V 200MA UB Microchip Technology |
3,239 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/116 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 5 ns | 75 µA @ 75 V | 75 V | 200mA | -65°C ~ 200°C | 1.2 V @ 100 mA | |
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VS-50PF140WDIODE GEN PURP 1.4KV 50A DO203AB Vishay General Semiconductor - Diodes Division |
2,293 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 1400 V | 50A | -55°C ~ 160°C | 1.5 V @ 125 A | |
|
VS-71HF160DIODE GEN PURP 1.6KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,746 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 4.5 mA @ 1600 V | 1600 V | 70A | -65°C ~ 150°C | 1.46 V @ 220 A | |
|
JANTX1N6622/TRRECTIFIER UFR,FRR Microchip Technology |
3,852 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 10V, 1MHz | 30 ns | 500 nA @ 660 V | 660 V | 2A | -65°C ~ 150°C | 1.4 V @ 1.2 A | |
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MUR5060RDIODE GEN PURP REV 600V 50A DO5 GeneSiC Semiconductor |
2,022 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 90 ns | 10 µA @ 50 V | 600 V | 50A | -55°C ~ 150°C | 1 V @ 50 A | |
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VS-80PFR160DIODE GEN PURP 1.6KV 80A DO203AB Vishay General Semiconductor - Diodes Division |
2,555 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1600 V | 80A | -55°C ~ 150°C | 1.46 V @ 220 A |
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