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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYT56J-TAPDIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,366 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.4 V @ 3 A | |
|
SS315HDIODE SCHOTTKY 150V 3A DO214AB Taiwan Semiconductor Corporation |
3,497 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | |
|
VB10150S-M3/8WDIODE SCHOTTKY 10A 150V TO-263AB Vishay General Semiconductor - Diodes Division |
2,385 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.2 V @ 10 A | |
|
VS-20TQ035SHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
3,435 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 35 V | 35 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A |
|
SS14LHRUGDIODE SCHOTTKY 40V 1A SUB SMA Taiwan Semiconductor Corporation |
2,020 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
V30DM120HM3/IDIODE SCHOTTKY 120V 30A TO263AC Vishay General Semiconductor - Diodes Division |
3,797 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 120 V | 120 V | 30A | -40°C ~ 175°C | 1.06 V @ 30 A |
|
|
BYT77-TAPDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,923 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 250 ns | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.2 V @ 3 A | |
|
VS-4ESH01-M3/87ADIODE GEN PURP 100V 4A TO277A Vishay General Semiconductor - Diodes Division |
3,224 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 4 V | 100 V | 4A | -65°C ~ 175°C | 930 mV @ 4 A |
|
|
VB10150S-M3/4WDIODE SCHOTTKY 10A 150V TO-263AB Vishay General Semiconductor - Diodes Division |
3,352 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.2 V @ 10 A | |
|
|
VS-20TQ045SHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
3,087 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 45 V | 45 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A |
|
ES3J V6GDIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation |
3,378 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | - | |
|
|
SD040SA60A.TPIV 60V IO 1A CHIP SIZE 40MIL SQ SMC Diode Solutions |
3,628 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 53pF @ 5V, 1MHz | - | 100 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 650 mV @ 1 A | |
|
|
BYW73-TAPDIODE AVALANCHE 300V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,007 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 300 V | 300 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
VS-4ESH02-M3/87ADIODE GEN PURP 200V 4A TO277A Vishay General Semiconductor - Diodes Division |
3,152 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 930 mV @ 4 A |
|
BYT62-TRDIODE AVALANCH 2.4KV 350MA SOD57 Vishay General Semiconductor - Diodes Division |
3,739 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 5 µs | 5 µA @ 2400 V | 2400 V | 350mA | 175°C (Max) | 3.6 V @ 1 A | |
|
|
VS-6TQ040STRR-M3DIODE SCHOTTKY 40V 6A TO263AB Vishay General Semiconductor - Diodes Division |
3,238 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 800 µA @ 40 V | 40 V | 6A | -55°C ~ 175°C | 600 mV @ 6 A | |
|
NSVR0320XV6T1GDIODE SCHOTTKY 23V 1A SOT563 onsemi |
2,972 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 35pF @ 5V, 1MHz | - | 50 µA @ 15 V | 23 V | 1A (DC) | -55°C ~ 150°C | 270 mV @ 10 mA | |
|
|
SD040SB100A.TPIV 100V IO 1A CHIP SIZE 40MIL S SMC Diode Solutions |
3,146 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 35pF @ 5V, 1MHz | - | 30 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 840 mV @ 1 A | |
|
|
BYW83TAPDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,814 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
ES3A-E3/9ATDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,633 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A |
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