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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SBRD8340G-VF01DIODE SCHOTTKY 40V 3A DPAK Rochester Electronics, LLC |
3,075 | - |
RFQ |
Bulk,Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 3A | -65°C ~ 175°C | 600 mV @ 3 A | |
|
VI20150S-M3/4WDIODE SCHOTTKY 20A 150V TO-262AA Vishay General Semiconductor - Diodes Division |
3,041 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.43 V @ 20 A | |
|
SFF2008G C0GDIODE GEN PURP 600V 20A ITO220AB Taiwan Semiconductor Corporation |
3,143 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 90pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 20A | -55°C ~ 150°C | 1.7 V @ 10 A | |
|
VS-ETU1506SHM3DIODE GEN PURP 600V 15A TO-262 Vishay General Semiconductor - Diodes Division |
2,594 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.9 V @ 15 A |
|
|
V8PM45HM3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
3,542 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1450pF @ 4V, 1MHz | - | 200 µA @ 45 V | 45 V | 8A | -40°C ~ 175°C | 600 mV @ 8 A |
|
|
AG01AVDIODE GEN PURP 600V 500MA AXIAL Sanken |
3,925 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 100 µA @ 600 V | 600 V | 500mA | -40°C ~ 150°C | 1.8 V @ 600 mA | |
|
|
VIT1080S-M3/4WDIODE SCHOTTKY 10A 80V TO-262AA Vishay General Semiconductor - Diodes Division |
3,000 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 600 µA @ 80 V | 80 V | 10A | -55°C ~ 150°C | 810 mV @ 10 A | |
|
|
EL02ZV0DIODE GEN PURP 200V 1.5A AXIAL Sanken |
3,226 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 50 µA @ 200 V | 200 V | 1.5A | -40°C ~ 150°C | 980 mV @ 1.5 A | |
|
SK15H45 R0GDIODE SCHOTTKY 45V 15A R-6 Taiwan Semiconductor Corporation |
3,130 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 150 µA @ 45 V | 45 V | 15A | 200°C (Max) | 560 mV @ 15 A | |
|
BAT2402ELSE6327XTSA1DIODE SCHOTTKY 4V 110MA SC79-2 Infineon Technologies |
3,971 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 230pF @ 0V, 1MHz | - | 5 µA @ 1 V | 4 V | 110mA (DC) | -55°C ~ 150°C | 410 mV @ 10 mA | |
|
|
V8PM15HM3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
2,464 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 460pF @ 4V, 1MHz | - | 150 µA @ 150 V | 150 V | 8A | -40°C ~ 175°C | 1.08 V @ 8 A |
|
|
AG01VDIODE GEN PURP 400V 700MA AXIAL Sanken |
2,406 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 100 µA @ 400 V | 400 V | 700mA | -40°C ~ 150°C | 1.8 V @ 700 mA | |
|
|
VS-8ETX06-1-M3DIODE GEN PURP 600V 8A TO262 Vishay General Semiconductor - Diodes Division |
2,639 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 24 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 3 V @ 8 A |
|
|
EL02ZV1DIODE GEN PURP 200V 1.5A AXIAL Sanken |
3,979 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 50 µA @ 200 V | 200 V | 1.5A | -40°C ~ 150°C | 980 mV @ 1.5 A | |
|
|
SK20H45 R0GDIODE SCHOTTKY 45V 20A R-6 Taiwan Semiconductor Corporation |
3,975 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 150 µA @ 45 V | 45 V | 20A | 200°C (Max) | 550 mV @ 20 A | |
|
|
VI20120SG-E3/4WDIODE SCHOTTKY 120V 20A TO262AA Vishay General Semiconductor - Diodes Division |
3,938 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.33 V @ 20 A | |
|
|
SMBT1587T1GDIODE STD REC SOT223 onsemi |
3,765 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
AM01AVDIODE GEN PURP 600V 1A AXIAL Sanken |
3,012 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 980 mV @ 1 A | |
|
SE12DJHM3/IDIODE GEN PURP 600V 3.2A TO263AC Vishay General Semiconductor - Diodes Division |
3,767 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 90pF @ 4V, 1MHz | 3 µs | 20 µA @ 600 V | 600 V | 3.2A | -55°C ~ 175°C | 1.15 V @ 12 A |
|
|
EL02ZWDIODE GEN PURP 200V 1.5A AXIAL Sanken |
3,796 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 50 µA @ 200 V | 200 V | 1.5A | -40°C ~ 150°C | 980 mV @ 1.5 A |
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