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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SIC20120PTA-BP 1200V,20A,SIC SBD,TO-247 PACKAGE Micro Commercial Co	1,800	-	RFQ	Ficha técnica	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	750pF @ 0V, 1MHz	-	2 µA @ 1200 V	1200 V	10A	-55°C ~ 175°C	1.8 V @ 10 A
65DN06B02ELEMXPSA1 STD THYR/DIODEN DISC Infineon Technologies	2,930	-	RFQ	Ficha técnica	Tray		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis Mount	-	-	100 mA @ 600 V	600 V	15130A	180°C (Max)	890 mV @ 8000 A
SCS220KGHRC DIODE SCHOTTKY 1200V 20A TO220-2 Rohm Semiconductor	314	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	1060pF @ 1V, 1MHz	0 ns	400 µA @ 1200 V	1200 V	20A (DC)	175°C (Max)	1.6 V @ 20 A
DD600S16K4NOSA1 RECTIFIER DIODE MODULE Rochester Electronics, LLC	3,472	-	RFQ	Ficha técnica	Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
MBRP30035L RECTIFIER, SCHOTTKY, 300A, 35V Rochester Electronics, LLC	5,092	-	RFQ	Ficha técnica	Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
DD400S17K4C RECTIFIER DIODE MODULE Rochester Electronics, LLC	3,072	-	RFQ		Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
NTE5932 R-1000 PRV 20A CATH CASE NTE Electronics, Inc	112	-	RFQ	Ficha técnica	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	12 mA @ 1000 V	1000 V	20A	-65°C ~ 175°C	1.23 V @ 63 A
DD600S17K3B2NOSA1 RECTIFIER DIODE MODULE Rochester Electronics, LLC	2,524	-	RFQ	Ficha técnica	Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
50HQ045 60A, 45V, DO-5, SCHOTTKY RECTIFI SMC Diode Solutions	133	-	RFQ		Box		RoHS	-	-	Active	-	-	-	-	-	-	-	-
DD1200S33KL2C_B5 RECTIFIER DIODE MODULE Rochester Electronics, LLC	3,150	-	RFQ	Ficha técnica	Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
NTE6002 R-1000 PRV 40A CATH CASE NTE Electronics, Inc	1,076	-	RFQ	Ficha técnica	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	9 mA @ 1000 V	1000 V	40A	-65°C ~ 190°C	1.3 V @ 40 A
1N4148-TAP DIODE GEN PURP 75V 300MA DO35 Vishay General Semiconductor - Diodes Division	5,455	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	4pF @ 0V, 1MHz	8 ns	25 nA @ 20 V	75 V	300mA (DC)	-65°C ~ 150°C	1 V @ 10 mA
NTE6042 R-800 PRV 60A CATH CASE NTE Electronics, Inc	496	-	RFQ	Ficha técnica	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	10 mA @ 800 V	800 V	60A	-65°C ~ 175°C	1.4 V @ 60 A
MMBD4448W-7-F DIODE GEN PURP 75V 250MA SOT323 Diodes Incorporated	2,135	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	2pF @ 0V, 1MHz	4 ns	1 µA @ 75 V	75 V	250mA	-65°C ~ 150°C	1.25 V @ 150 mA
NTE6043 R-800 PRV 60A ANODE CASE NTE Electronics, Inc	284	-	RFQ	Ficha técnica	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	10 mA @ 800 V	800 V	60A	-65°C ~ 175°C	1.4 V @ 60 A
1N4454TR DIODE GEN PURP 50V 200MA DO35 onsemi	3,418	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	4pF @ 0V, 1MHz	4 ns	100 nA @ 50 V	50 V	200mA	175°C (Max)	1 V @ 10 mA
C4D15120H ZRECTM 15A 1200V SIC SCHOTTKY DI Wolfspeed, Inc.	379	-	RFQ	Ficha técnica	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1.2nF @ 0V, 1MHz	0 ns	200 µA @ 1200 V	1200 V	39A (DC)	-55°C ~ 175°C	1.8 V @ 15 A
BAS20LT3G DIODE GP 200V 200MA SOT23-3 onsemi	3,070	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	5pF @ 0V, 1MHz	50 ns	100 nA @ 150 V	200 V	200mA (DC)	-55°C ~ 150°C	1.25 V @ 200 mA
GD50MPS12H 1200V 50A TO-247-2 SIC SCHOTTKY GeneSiC Semiconductor	491	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1.835nF @ 1V, 1MHz	0 ns	15 µA @ 1200 V	1200 V	92A (DC)	-55°C ~ 175°C	1.8 V @ 50 A
STPS0520M DIODE SCHOTTKY 20V 500MA STMITE STMicroelectronics	6,783	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	50 µA @ 20 V	20 V	500mA	150°C (Max)	385 mV @ 500 mA