+86 075582561136
Carregar BOM
Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBR3580RDIODE SCHOTTKY REV 80V DO4 GeneSiC Semiconductor |
2,162 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 1.5 mA @ 20 V | 80 V | 35A | -55°C ~ 150°C | 840 mV @ 35 A | |
|
|
1N5305UR-1CURRENT REGULATOR DIODE Microchip Technology |
3,621 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
UES1106SMRECTIFIER Microchip Technology |
3,618 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | - | 400 V | 2A | - | 1.25 V @ 1 A | ||
|
VS-6F10DIODE GEN PURP 100V 6A DO203AA Vishay General Semiconductor - Diodes Division |
3,230 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 100 V | 100 V | 6A | -65°C ~ 175°C | 1.1 V @ 19 A | |
|
|
1N5292UR-1CURRENT REGULATOR DIODE Microchip Technology |
3,295 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
1N5617US/TRRECTIFIER UFR,FRR Microchip Technology |
2,783 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 35pF @ 12V, 1MHz | 150 ns | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | ||
|
|
GATELEAD28133HPSA1ACCY GATE LEAD FOR MODULE Infineon Technologies |
2,033 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
1N5306UR-1CURRENT REGULATOR DIODE Microchip Technology |
3,816 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
UES1105SMRECTIFIER Microchip Technology |
2,980 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | - | 300 V | 2A | - | 1.25 V @ 1 A | ||
|
|
VS-6F100DIODE GEN PURP 1KV 6A DO203AA Vishay General Semiconductor - Diodes Division |
3,452 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 1000 V | 1000 V | 6A | -65°C ~ 175°C | 1.1 V @ 19 A | |
|
|
MSC030SDA170BDIODE SCHOTTKY 1700V TO-247 Microchip Technology |
2,322 | - |
RFQ |
Ficha técnica |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
1N5711E3DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
3,253 | - |
RFQ |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Through Hole | 2pF @ 0V, 1MHz | - | 200 nA @ 50 V | 70 V | 33mA | -65°C ~ 150°C | 1 V @ 15 mA | ||
|
|
JAN1N6638.3A ULTRA FAST 115V Semtech Corporation |
3,298 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/578 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4.5 ns | 500 nA @ 125 V | 125 V | 300mA | - | 800 mV @ 10 mA |
|
|
1N5308UR-1CURRENT REGULATOR DIODE Microchip Technology |
2,733 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
VS-T85HF100DIODE GEN PURP 1KV 85A D-55 Vishay General Semiconductor - Diodes Division |
3,771 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 1000 V | 1000 V | 85A | - | - | |
|
|
MB420L_R1_00001ULTRA LOW VF SCHOTTKY BARRIER RE Panjit International Inc. |
2,553 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 860 mV @ 4 A | ||
|
HS1M R3GDIODE GEN PURP 1KV 1A DO214AC Taiwan Semiconductor Corporation |
2,264 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
VS-6FR10DIODE GEN PURP 100V 6A DO203AA Vishay General Semiconductor - Diodes Division |
2,654 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 100 V | 100 V | 6A | -65°C ~ 175°C | 1.1 V @ 19 A | |
|
|
JANTX1N6630UDIODE GEN PURP 900V 1.4A E-MELF Microchip Technology |
3,959 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 2 µA @ 900 V | 900 V | 1.4A | -65°C ~ 150°C | 1.4 V @ 1.4 A | |
|
|
VS-6FL80S05DIODE GEN PURP 800V 6A DO203AA Vishay General Semiconductor - Diodes Division |
3,834 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 50 µA @ 800 V | 800 V | 6A | -65°C ~ 150°C | 1.4 V @ 6 A |
- 1500+ Média diária de RFQ
- 20,000.000 Unidade padrão do produto
- 1800+ Fabricantes em todo o mundo
- 15,000+ Armazém em estoque
