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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-50PFR120DIODE GEN PURP 1.2KV 50A DO203AB Vishay General Semiconductor - Diodes Division |
3,760 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1200 V | 50A | -55°C ~ 180°C | 1.4 V @ 125 A | |
|
HS1DLW RVGDIODE GEN PURP 200V 1A SOD123W Taiwan Semiconductor Corporation |
2,166 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 50 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
JANTX1N5420D MET 3A FAST 600V HR Semtech Corporation |
2,908 | - |
RFQ |
Ficha técnica |
Bulk | MIL-PRF-19500/411. | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 120pF @ 4V, 1MHz | 400 ns | 1 µA @ 600 V | 600 V | 4.5A | - | 1.1 V @ 3 A |
|
BAS16LP-7BSWITCHING DIODE X1-DFN1006-2 Diodes Incorporated |
3,375 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 75 V | 200mA | -65°C ~ 150°C | 1.25 V @ 150 mA | |
|
|
1N4148UB2SWITCHING DIODE Microchip Technology |
3,259 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
JAN1N5420D MET 3A FAST 600V HR Semtech Corporation |
3,570 | - |
RFQ |
Ficha técnica |
Bulk | MIL-PRF-19500/411. | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 120pF @ 4V, 1MHz | 400 ns | 1 µA @ 600 V | 600 V | 4.5A | - | 1.1 V @ 3 A |
|
|
JANTX1N5312-1CURRENT REGULATOR DIODE Microchip Technology |
2,074 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
|
S25MRDIODE GEN PURP 1KV 25A DO220AA GeneSiC Semiconductor |
3,659 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1000 V | 25A | -65°C ~ 175°C | 1.1 V @ 25 A | |
|
JAN1N5621/TRRECTIFIER UFR,FRR Microchip Technology |
2,073 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 500 nA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | |
|
|
JANTX1N4148UBDIODE GEN PURP 75V 200MA UB Microchip Technology |
3,389 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/116 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 20 ns | 500 nA @ 75 V | 75 V | 200mA | -65°C ~ 200°C | 1.2 V @ 100 mA |
|
|
1N4148UB2RSWITCHING DIODE Microchip Technology |
2,725 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
1N6630USDIODE GEN PURP 900V 1.4A D5B Microchip Technology |
3,460 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 4 µA @ 100 V | 900 V | 1.4A | -65°C ~ 150°C | 1.7 V @ 3 A | |
|
VS-T110HF20DIODE GEN PURP 200V 110A D-55 Vishay General Semiconductor - Diodes Division |
3,123 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 200 V | 200 V | 110A | - | - | |
|
|
S25QDIODE GEN PURP 1.2KV 25A DO203AA GeneSiC Semiconductor |
3,236 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1200 V | 25A | -65°C ~ 175°C | 1.1 V @ 25 A | |
|
JAN1N4249/TRRECTIFIER UFR,FRR Microchip Technology |
2,810 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 1 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A | |
|
|
UES1304E3RECTIFIER Microchip Technology |
2,342 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | - | 200 V | 5A | -55°C ~ 150°C | 1.25 V @ 3 A | ||
|
|
1N4148UBCASWITCHING DIODE Microchip Technology |
3,278 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
USC1104DIODE GEN PURP 200V 2.1A AXIAL Semtech Corporation |
3,367 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 5V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 2.1A | -55°C ~ 150°C | 1.25 V @ 1 A | |
|
JANTX1N5296-1/TRCURRENT REGULATOR Microchip Technology |
3,000 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
|
S25QRDIODE GEN PURP 1.2KV 25A DO220AA GeneSiC Semiconductor |
2,899 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1200 V | 25A | -65°C ~ 175°C | 1.1 V @ 25 A |
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