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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CLH06(TE16L,Q)DIODE GEN PURP 300V 5A L-FLAT Toshiba Semiconductor and Storage |
2,495 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | - | 300 V | 5A (DC) | - | - | |
|
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CLH06(TE16R,Q)DIODE GEN PURP 300V 5A L-FLAT Toshiba Semiconductor and Storage |
2,194 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | - | 300 V | 5A (DC) | - | - | |
|
1SS403E,L3FSINGLE SWITCHING DIODE 200V 0.1A Toshiba Semiconductor and Storage |
3,992 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 3pF @ 0V, 1MHz | 60 ns | 1 µA @ 200 V | 200 V | 100mA | 150°C (Max) | 1.2 V @ 100 mA | |
|
|
CLH07(TE16L,NMB,Q)DIODE GEN PURP 400V 5A L-FLAT Toshiba Semiconductor and Storage |
3,374 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 10 µA @ 400 V | 400 V | 5A (DC) | -40°C ~ 150°C | 1.8 V @ 5 A | |
|
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CLH07(TE16R,Q)DIODE GEN PURP 400V 5A L-FLAT Toshiba Semiconductor and Storage |
3,701 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 10 µA @ 400 V | 400 V | 5A (DC) | -40°C ~ 150°C | 1.8 V @ 5 A | |
|
1SS322(TE85L,F)SMALL-SIGNAL SCHOTTKY BARRIER DI Toshiba Semiconductor and Storage |
3,598 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 18pF @ 0V, 1MHz | - | 5 µA @ 40 V | 40 V | 100mA | 125°C (Max) | 600 mV @ 100 mA | |
|
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CLS01(T6LSONY,Q)DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage |
3,403 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 530pF @ 10V, 1MHz | - | 1 mA @ 30 V | 30 V | 10A (DC) | -40°C ~ 125°C | 470 mV @ 10 A | |
|
|
CLS01(TE16L,PAS,Q)DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage |
3,842 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 530pF @ 10V, 1MHz | - | 1 mA @ 30 V | 30 V | 10A (DC) | -40°C ~ 125°C | 470 mV @ 10 A | |
|
|
CLS01(TE16R,Q)DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage |
3,247 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 530pF @ 10V, 1MHz | - | 1 mA @ 30 V | 30 V | 10A (DC) | -40°C ~ 125°C | 470 mV @ 10 A | |
|
|
CLS01,LFJFQ(ODIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage |
2,978 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 530pF @ 10V, 1MHz | - | 1 mA @ 30 V | 30 V | 10A (DC) | -40°C ~ 125°C | 0.47 V @ 10 A | |
|
|
CLS02(T6L,CANO-O,QDIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage |
3,349 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 420pF @ 10V, 1MHz | - | 1 mA @ 40 V | 40 V | 10A (DC) | -40°C ~ 125°C | 0.55 V @ 10 A | |
|
|
CLS02(T6L,CLAR,Q)DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage |
2,271 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 420pF @ 10V, 1MHz | - | 1 mA @ 40 V | 40 V | 10A (DC) | -40°C ~ 125°C | 0.55 V @ 10 A | |
|
CUS05S30,H3FDIODE SCHOTTKY 30V 500MA USC Toshiba Semiconductor and Storage |
2,938 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 55pF @ 0V, 1MHz | - | 150 µA @ 10 V | 30 V | 500mA | 125°C (Max) | 340 mV @ 100 mA | |
|
1SS413CT,L3FDIODE SCHOTTKY 20V 50MA SOD882 Toshiba Semiconductor and Storage |
2,651 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 3.9pF @ 0V, 1MHz | - | 500 nA @ 20 V | 20 V | 50mA | -55°C ~ 125°C | 550 mV @ 50 mA | |
|
|
CLS02(TE16L,HIT,Q)DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage |
2,612 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 420pF @ 10V, 1MHz | - | 1 mA @ 40 V | 40 V | 10A (DC) | -40°C ~ 125°C | 0.55 V @ 10 A | |
|
|
CLS02(TE16L,SQC,Q)DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage |
2,860 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 420pF @ 10V, 1MHz | - | 1 mA @ 40 V | 40 V | 10A (DC) | -40°C ~ 125°C | 0.55 V @ 10 A | |
|
|
CLS02(TE16R,Q)DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage |
2,443 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 420pF @ 10V, 1MHz | - | 1 mA @ 40 V | 40 V | 10A (DC) | -40°C ~ 125°C | 0.55 V @ 10 A | |
|
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CLS03(T6L,CANO-O,QDIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage |
2,676 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 345pF @ 10V, 1MHz | - | 1 mA @ 60 V | 60 V | 10A (DC) | -40°C ~ 125°C | 0.58 V @ 10 A | |
|
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CLS03(T6L,SHINA,Q)DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage |
3,714 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 345pF @ 10V, 1MHz | - | 1 mA @ 60 V | 60 V | 10A (DC) | -40°C ~ 125°C | 0.58 V @ 10 A | |
|
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CLS03(TE16L,DNSO,QDIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage |
3,252 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 345pF @ 10V, 1MHz | - | 1 mA @ 60 V | 60 V | 10A (DC) | -40°C ~ 125°C | 0.58 V @ 10 A |
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