Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SMMSD701T1G

SMMSD701T1G

DIODE SCHOTTKY 70V 200MA SOD123

onsemi
11,716 -

RFQ

SMMSD701T1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 1pF @ 0V, 1MHz - 200 nA @ 35 V 70 V 200mA (DC) -55°C ~ 125°C 1 V @ 10 mA
1N4005G

1N4005G

DIODE GEN PURP 600V 1A DO41

onsemi
28,154 -

RFQ

1N4005G

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1N4003G

1N4003G

DIODE GEN PURP 200V 1A DO41

onsemi
21,903 -

RFQ

1N4003G

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.1 V @ 1 A
FFSH1665A

FFSH1665A

650V 16A SIC SBD

onsemi
296 -

RFQ

FFSH1665A

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 887pF @ 1V, 100kHz 0 ns 200 µA @ 650 V 650 V 23A (DC) -55°C ~ 150°C -
NSVBAS19LT1G

NSVBAS19LT1G

DIODE GP 120V 200MA SOT23-3

onsemi
172,053 -

RFQ

NSVBAS19LT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 100 V 120 V 200mA (DC) -55°C ~ 150°C 1.25 V @ 200 mA
1N4001G

1N4001G

DIODE GEN PURP 50V 1A DO41

onsemi
18,117 -

RFQ

1N4001G

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 50 V 50 V 1A -65°C ~ 175°C 1.1 V @ 1 A
SBAS21LT1G

SBAS21LT1G

DIODE GEN PURP 250V 200MA SOT23

onsemi
10,998 -

RFQ

SBAS21LT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 200 V 250 V 200mA (DC) -55°C ~ 150°C 1.25 V @ 200 mA
MUR440RLG

MUR440RLG

DIODE GEN PURP 400V 4A DO201AD

onsemi
2,656 -

RFQ

MUR440RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 400 V 400 V 4A -65°C ~ 175°C 1.28 V @ 4 A
FFSH4065BDN-F085

FFSH4065BDN-F085

SIC DIODE 650V

onsemi
310 -

RFQ

FFSH4065BDN-F085

Ficha técnica

Tube Automotive, AEC-Q101 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 866pF @ 1V, 100kHz 0 ns 40 µA @ 650 V 650 V 20A (DC) -55°C ~ 175°C 1.7 V @ 20 A
MMBD1501A

MMBD1501A

DIODE GEN PURP 200V 200MA SOT23

onsemi
47,976 -

RFQ

MMBD1501A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz - 10 nA @ 180 V 200 V 200mA 150°C (Max) 1.1 V @ 200 mA
1N456A

1N456A

DIODE GEN PURP 30V 500MA DO35

onsemi
22,389 -

RFQ

1N456A

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 25 nA @ 25 V 30 V 500mA 175°C (Max) 1 V @ 100 mA
1N485B

1N485B

DIODE GEN PURP 200V 200MA DO35

onsemi
11,696 -

RFQ

1N485B

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - - 25 nA @ 175 V 200 V 200mA 175°C (Max) 1 V @ 100 mA
1N5401RLG

1N5401RLG

DIODE GEN PURP 100V 3A DO201AD

onsemi
19,934 -

RFQ

1N5401RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 100 V 100 V 3A -65°C ~ 150°C 1 V @ 3 A
1N457

1N457

DIODE GEN PURP 70V 200MA DO35

onsemi
2,262 -

RFQ

1N457

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 8pF @ 0V, 1MHz - 25 nA @ 60 V 70 V 200mA 175°C (Max) 1 V @ 20 mA
BYW80-200G

BYW80-200G

DIODE GEN PURP 200V 8A TO220-2

onsemi
1,270 -

RFQ

BYW80-200G

Ficha técnica

Tube SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 10 µA @ 200 V 200 V 8A -65°C ~ 175°C 1.25 V @ 22 A
FFPF30UA60S

FFPF30UA60S

DIODE GEN PURP 600V 30A TO220-2

onsemi
1,332 -

RFQ

FFPF30UA60S

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 90 ns 100 µA @ 600 V 600 V 30A -65°C ~ 150°C 2.2 V @ 30 A
FFSP08120A

FFSP08120A

DIODE SCHOTTKY 1.2KV 8A TO220-2

onsemi
762 -

RFQ

FFSP08120A

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Silicon Carbide Schottky Active Through Hole 538pF @ 1V, 100kHz - 200 µA @ 1200 V 1200 V 8A (DC) -55°C ~ 175°C 1.75 V @ 8 A
RHRP1560

RHRP1560

DIODE GEN PURP 600V 15A TO220AC

onsemi
2,414 -

RFQ

RHRP1560

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 100 µA @ 600 V 600 V 15A -65°C ~ 175°C 2.1 V @ 15 A
1N4148TR

1N4148TR

DIODE GEN PURP 100V 200MA DO35

onsemi
519,967 -

RFQ

1N4148TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 4 ns 5 µA @ 75 V 100 V 200mA -65°C ~ 175°C 1 V @ 10 mA
FDLL4148

FDLL4148

DIODE GEN PURP 100V 200MA SOD80

onsemi
347,441 -

RFQ

FDLL4148

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz 4 ns 5 µA @ 75 V 100 V 200mA -65°C ~ 175°C 1 V @ 10 mA
Total 2304 Record«Prev1... 1920212223242526...116Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário