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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBRS2040LT3HDIODE SCHOTTKY onsemi |
2,792 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 800 µA @ 40 V | 40 V | 2A | -55°C ~ 125°C | 430 mV @ 2 A | ||
|
|
MBRS240LT3HDIODE SCHOTTKY onsemi |
2,708 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 430 mV @ 2 A | ||
|
|
MBRS260T3HDIODE SCHOTTKY onsemi |
3,164 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 2A | -55°C ~ 125°C | 630 mV @ 2 A | ||
|
MBRS3100T3HDIODE SCHOTTKY onsemi |
3,695 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 50 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 900 mV @ 6 A | ||
|
MUR1510HDIODE GEN PURPOSE onsemi |
2,249 | - |
RFQ |
Tray | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 100 V | 100 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A | |
|
|
MUR8100EHDIODE GEN PURPOSE onsemi |
3,858 | - |
RFQ |
Tray | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 25 µA @ 1000 V | 1000 V | 8A | -65°C ~ 175°C | 1.8 V @ 8 A | |
|
|
MUR820HDIODE GEN PURPOSE onsemi |
2,127 | - |
RFQ |
Tray | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 175°C | 975 mV @ 8 A | |
|
|
MUR840HDIODE GEN PURPOSE onsemi |
3,059 | - |
RFQ |
Tray | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 60 ns | 10 µA @ 400 V | 400 V | 8A | -65°C ~ 175°C | 1.3 V @ 8 A | |
|
MURA120T3HDIODE GEN PURPOSE onsemi |
2,916 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 875 mV @ 1 A | ||
|
MURF860HDIODE GEN PURPOSE onsemi |
3,405 | - |
RFQ |
Tray | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 60 ns | 10 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.5 V @ 8 A | |
|
|
MURS120T3HDIODE GEN PURPOSE onsemi |
2,275 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 875 mV @ 1 A | ||
|
|
MURS140T3HDIODE GEN PURPOSE onsemi |
3,159 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.25 V @ 1 A | ||
|
|
MURS160T3HDIODE GEN PURPOSE onsemi |
2,969 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 2A | -65°C ~ 175°C | 1.25 V @ 1 A | ||
|
|
MURS320T3HDIODE GEN PURPOSE onsemi |
3,371 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 890 mV @ 4 A | ||
|
|
SS24T3HDIODE SCHOTTKY onsemi |
3,621 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A | ||
|
|
SS26T3HDIODE SCHOTTKY onsemi |
2,266 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 630 mV @ 2 A | ||
|
FFSH5065A-F155SIC DIODE TO247 650V onsemi |
2,375 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 2530pF @ 1V, 100kHz | 0 ns | 200 µA @ 650 V | 650 V | 60A (DC) | -55°C ~ 175°C | - | |
|
MR850DIODE GEN PURP 50V 3A DO201AD onsemi |
2,085 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | 10 µA @ 50 V | 50 V | 3A | -65°C ~ 125°C | 1.25 V @ 3 A | |
|
NSVR1020MW2T1GDIODE SCHOTTKY 20V 1A SOD323 onsemi |
7,557 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 29pF @ 5V, 1MHz | - | 40 µA @ 15 V | 20 V | 1A (DC) | -55°C ~ 150°C | 540 mV @ 1 A |
|
1N4447DIODE GEN PURP 100V DO35 onsemi |
4,472 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | - | 175°C (Max) | - |
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