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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SK35BHDIODE SCHOTTKY 50V 3A DO214AA Taiwan Semiconductor Corporation |
3,382 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 750 mV @ 3 A | |
|
|
ES2BAHDIODE GEN PURP 100V 2A DO214AC Taiwan Semiconductor Corporation |
3,458 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 2A (DC) | -55°C ~ 150°C | 950 mV @ 2 A | |
|
SK25ADIODE SCHOTTKY 50V 2A DO214AC Taiwan Semiconductor Corporation |
3,143 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 2A (DC) | -55°C ~ 125°C | 700 mV @ 2 A | ||
|
|
SK52BDIODE SCHOTTKY 20V 5A DO214AA Taiwan Semiconductor Corporation |
3,341 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 5A (DC) | -55°C ~ 150°C | 550 mV @ 5 A | ||
|
|
SK82CDIODE SCHOTTKY 8A 20V DO-214AB Taiwan Semiconductor Corporation |
3,275 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 8A (DC) | -55°C ~ 125°C | 550 mV @ 8 A | ||
|
|
SK29ADIODE SCHOTTKY 90V 2A DO214AC Taiwan Semiconductor Corporation |
2,352 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 2A (DC) | -55°C ~ 150°C | 850 mV @ 2 A | ||
|
|
SK32ADIODE SCHOTTKY 20V 3A DO214AC Taiwan Semiconductor Corporation |
3,934 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 150°C | 550 mV @ 3 A | ||
|
|
SK39ADIODE SCHOTTKY 90V 3A DO214AC Taiwan Semiconductor Corporation |
2,617 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | ||
|
|
SK35AHDIODE SCHOTTKY 50V 3A DO214AC Taiwan Semiconductor Corporation |
3,283 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 720 mV @ 3 A | |
|
|
ES2BHDIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation |
2,564 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 2A (DC) | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
HS3BDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
2,971 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | ||
|
|
US1ADIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
3,162 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A | ||
|
|
SS32HDIODE SCHOTTKY 20V 3A DO214AB Taiwan Semiconductor Corporation |
2,896 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A (DC) | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
ES1ADIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
2,994 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | ||
|
|
ES3BHDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
2,283 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
ES2CAHDIODE GEN PURP 150V 2A DO214AC Taiwan Semiconductor Corporation |
2,435 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 2A (DC) | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
SK52BHDIODE SCHOTTKY 20V 5A DO214AA Taiwan Semiconductor Corporation |
3,324 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 5A (DC) | -55°C ~ 150°C | 550 mV @ 5 A | |
|
|
S3BDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
3,313 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | ||
|
ES2DAHR3GDIODE GEN PURP 200V 2A DO214AC Taiwan Semiconductor Corporation |
537 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
UGF1008G C0GDIODE GEN PURP 600V 10A ITO220AB Taiwan Semiconductor Corporation |
449 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A |
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