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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RS1GLHRQGDIODE GEN PURP 400V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,968 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
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MBRS1050 MNGDIODE SCHOTTKY 50V 10A TO263AB Taiwan Semiconductor Corporation |
2,334 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 50 V | 50 V | 10A | -55°C ~ 175°C | 950 mV @ 10 A | |
|
|
SS215LHR3GDIODE SCHOTTKY 150V 2A SUB SMA Taiwan Semiconductor Corporation |
3,646 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
RS1GLHRTGDIODE GEN PURP 400V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,842 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
|
S1JL RQGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,271 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
MBRS1050HMNGDIODE SCHOTTKY 50V 10A TO263AB Taiwan Semiconductor Corporation |
2,339 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 50 V | 50 V | 10A | -55°C ~ 175°C | 950 mV @ 10 A |
|
|
SS215LHRFGDIODE SCHOTTKY 150V 2A SUB SMA Taiwan Semiconductor Corporation |
3,992 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
RS1JL MQGDIODE GEN PURP 600V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,356 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
S1JL RTGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,803 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
MBRS1060 MNGDIODE SCHOTTKY 60V 10A TO263AB Taiwan Semiconductor Corporation |
3,323 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 10A | -55°C ~ 175°C | 950 mV @ 10 A | |
|
SS22HR5GDIODE SCHOTTKY 20V 2A DO214AA Taiwan Semiconductor Corporation |
3,921 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 2A | -55°C ~ 125°C | 500 mV @ 2 A |
|
|
RS1JL MTGDIODE GEN PURP 600V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,270 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
S1JLHMQGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,589 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
|
MBRS1060HMNGDIODE SCHOTTKY 60V 10A TO263AB Taiwan Semiconductor Corporation |
3,901 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 10A | -55°C ~ 175°C | 950 mV @ 10 A |
|
|
SS22L R3GDIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation |
2,822 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A | |
|
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RS1JL RQGDIODE GEN PURP 600V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,794 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
S1JLHMTGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,504 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
|
MBRS1090 MNGDIODE SCHOTTKY 90V 10A TO263AB Taiwan Semiconductor Corporation |
2,176 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 10A | -55°C ~ 175°C | - | |
|
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SS22L RFGDIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation |
2,819 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A | |
|
|
RS1JL RTGDIODE GEN PURP 600V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,685 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
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