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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SRT15HDIODE SCHOTTKY 1A 50V TS-1 Taiwan Semiconductor Corporation |
3,150 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 700 mV @ 1 A | |
|
SR205HDIODE SCHOTTKY 2A 50V TO220AB Taiwan Semiconductor Corporation |
3,939 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 2A (DC) | -55°C ~ 150°C | 700 mV @ 2 A | |
|
SFA1004GDIODE GEN PURP 200V 10A TO220AC Taiwan Semiconductor Corporation |
2,502 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 10A (DC) | -55°C ~ 150°C | 975 mV @ 10 A | ||
|
|
SFT17GHDIODE GEN PURP 1A 500V TS-1 Taiwan Semiconductor Corporation |
2,547 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A (DC) | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
F1T3GHDIODE FAST REC 1A 200V TS-1 Taiwan Semiconductor Corporation |
2,474 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A (DC) | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
SF12GHDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,703 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 950 mV @ 1 A | |
|
ES3FB M4GDIODE GEN PURP 300V 3A DO214AA Taiwan Semiconductor Corporation |
2,281 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 41pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1.13 V @ 3 A | |
|
|
ES3GB M4GDIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation |
2,996 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 41pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.13 V @ 3 A | |
|
|
ES3JB M4GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
2,010 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 34pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.45 V @ 3 A | |
|
|
SK310BHR5GDIODE SCHOTTKY 100V 3A DO214AA Taiwan Semiconductor Corporation |
2,184 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
|
MUR340SHDIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation |
2,342 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 3A (DC) | -55°C ~ 175°C | 1.25 V @ 3 A | |
|
|
ES3FHDIODE GEN PURP 300V 3A DO214AB Taiwan Semiconductor Corporation |
3,866 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 3A (DC) | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
SS33HDIODE SCHOTTKY 30V 3A DO214AB Taiwan Semiconductor Corporation |
2,726 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A (DC) | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
SS34HDIODE GEN PURP 40V 3A DO214AB Taiwan Semiconductor Corporation |
2,466 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A (DC) | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
SFT17GDIODE GEN PURP 1A 500V TS-1 Taiwan Semiconductor Corporation |
2,766 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A (DC) | -55°C ~ 150°C | 1.7 V @ 1 A | ||
|
|
SRT15DIODE SCHOTTKY 1A 50V TS-1 Taiwan Semiconductor Corporation |
2,405 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 700 mV @ 1 A | ||
|
|
SRT12HDIODE SCHOTTKY 20V 1A TS-1 Taiwan Semiconductor Corporation |
3,100 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 110pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 1A (DC) | -55°C ~ 125°C | 550 mV @ 1 A | |
|
SF42GDIODE GEN PURP 100V 4A DO201AD Taiwan Semiconductor Corporation |
3,477 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 4A (DC) | -55°C ~ 150°C | 1 V @ 4 A | ||
|
|
1N5393GDIODE GEN PURP 1.5A 200V DO-15 Taiwan Semiconductor Corporation |
3,089 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1.5A (DC) | -55°C ~ 150°C | 1 V @ 1.5 A | ||
|
|
SR203HDIODE SCHOTTKY 2A 30V TO220AB Taiwan Semiconductor Corporation |
2,178 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 2A (DC) | -55°C ~ 125°C | 550 mV @ 2 A |
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