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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MUR305S V6GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
3,974 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 175°C | - | |
|
|
MUR310S V6GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
2,667 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | - | |
|
MUR310SHDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
3,710 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 175°C | 875 mV @ 3 A | |
|
|
MUR315S V6GDIODE GEN PURP 150V 3A DO214AB Taiwan Semiconductor Corporation |
3,881 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | - | |
|
|
ES3DVHDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,355 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 10 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 150°C | 900 mV @ 3 A | |
|
SRA1050HDIODE SCHOTTKY 50V 10A TO220AC Taiwan Semiconductor Corporation |
2,955 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 10A (DC) | -55°C ~ 150°C | 700 mV @ 10 A | |
|
SF21GHDIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation |
2,109 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 2A (DC) | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
HS3F R7DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,485 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | ||
|
|
MBRF16100DIODE SCHOTTKY 100V 16A ITO220 Taiwan Semiconductor Corporation |
2,736 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 100 V | 100 V | 16A (DC) | -55°C ~ 150°C | 850 mV @ 16 A | ||
|
UF4003HDIODE GEN PURP 200V 1A DO-41 Taiwan Semiconductor Corporation |
3,916 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A | |
|
ES1CDIODE GEN PURP 150V 1A DO214AC Taiwan Semiconductor Corporation |
3,776 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | ||
|
|
S3J M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,166 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | ||
|
|
SF13GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,500 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A (DC) | -55°C ~ 150°C | 950 mV @ 1 A | ||
|
|
SF12GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,523 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 950 mV @ 1 A | ||
|
|
MUR320S V6GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,200 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | - | |
|
|
MUR305SHDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
3,502 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 175°C | 875 mV @ 3 A | |
|
|
SSL22 M4GDIODE SCHOTTKY 20V 2A DO214AA Taiwan Semiconductor Corporation |
3,737 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 2A | -55°C ~ 125°C | 410 mV @ 2 A | |
|
|
ES3DHDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
2,787 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
SSL23 M4GDIODE SCHOTTKY 30V 2A DO214AA Taiwan Semiconductor Corporation |
3,496 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 2A | -55°C ~ 125°C | 410 mV @ 2 A | |
|
|
ES3CDIODE GEN PURP 150V 3A DO214AB Taiwan Semiconductor Corporation |
2,439 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
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