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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR503HDIODE SCHOTTKY 5A 30V DO-201AD Taiwan Semiconductor Corporation |
2,740 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 5A (DC) | -55°C ~ 125°C | 550 mV @ 5 A | |
|
S4K M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,148 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 800 V | 800 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | ||
|
|
SF47GHDIODE GEN PURP 4A 500V DO-201AD Taiwan Semiconductor Corporation |
2,118 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 4A (DC) | -55°C ~ 150°C | 1.7 V @ 4 A | |
|
SRAF590DIODE SCHOTTKY 90V 5A ITO220AC Taiwan Semiconductor Corporation |
3,497 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 90 V | 90 V | 5A (DC) | -55°C ~ 150°C | 850 mV @ 5 A | ||
|
|
SS35 M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,100 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 750 mV @ 3 A | ||
|
|
UGF12JDIODE GEN PURP 600V 12A ITO220AC Taiwan Semiconductor Corporation |
2,547 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 5 µA @ 600 V | 600 V | 12A (DC) | -55°C ~ 150°C | 2 V @ 12 A | ||
|
|
HERA803GDIODE GEN PURP 8A 200V TO220AC Taiwan Semiconductor Corporation |
3,374 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 8A (DC) | -55°C ~ 150°C | 1 V @ 8 A | ||
|
|
SS36 R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,181 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A (DC) | -55°C ~ 150°C | 750 mV @ 3 A | ||
|
UF4002DIODE GEN PURP 100V 1A DO-41 Taiwan Semiconductor Corporation |
3,123 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A | ||
|
|
HT13GDIODE GEN PURP 1A 200V TS-1 Taiwan Semiconductor Corporation |
2,758 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A | ||
|
|
ESH3C M6DIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
3,748 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | ||
|
S5JBHM4GDIODE GEN PURP 600V 5A DO214AA Taiwan Semiconductor Corporation |
3,262 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.1 V @ 5 A |
|
SR804HR0GDIODE SCHOTTKY 40V 8A DO201AD Taiwan Semiconductor Corporation |
3,958 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |
|
|
S5KBHM4GDIODE GEN PURP 800V 5A DO214AA Taiwan Semiconductor Corporation |
2,776 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 5A | -55°C ~ 150°C | 1.1 V @ 5 A |
|
|
SR806HR0GDIODE SCHOTTKY 60V 8A DO201AD Taiwan Semiconductor Corporation |
3,003 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A |
|
|
SR209HDIODE SCHOTTKY 20A 90V DO-15 Taiwan Semiconductor Corporation |
2,327 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 2A (DC) | -55°C ~ 150°C | 850 mV @ 2 A | |
|
|
S5MBHM4GDIODE GEN PURP 5A DO214AA Taiwan Semiconductor Corporation |
3,706 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 10 µA @ 1000 V | - | 5A | -55°C ~ 150°C | 1.1 V @ 5 A |
|
6A05GDIODE GEN PURP 6A 50V R-6 Taiwan Semiconductor Corporation |
3,652 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 6A (DC) | -55°C ~ 150°C | 1.1 V @ 6 A | ||
|
|
SRAF16100DIODE SCHOTTKY 100V 16A ITO220AC Taiwan Semiconductor Corporation |
3,883 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 16A (DC) | -55°C ~ 150°C | 920 mV @ 16 A | ||
|
|
S12GC V6GDIODE GEN PURP 400V 12A DO214AB Taiwan Semiconductor Corporation |
2,440 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 12A | -55°C ~ 150°C | - |
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