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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5402G R0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
3,750 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
US1M R3GDIODE GEN PURP 1KV 1A DO214AC Taiwan Semiconductor Corporation |
25,105 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
TPAR3D S1GDIODE AVALANCHE 200V 3A TO277A Taiwan Semiconductor Corporation |
8,989 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 58pF @ 4V, 1MHz | 120 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.55 V @ 3 A | |
|
|
ES1F R3GDIODE GEN PURP 300V 1A DO214AC Taiwan Semiconductor Corporation |
2,835 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 18pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
HS2JAL M3G75NS, 2A, 600V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
7,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 75 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | ||
|
|
HS2GAL M3G50NS, 2A, 400V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
7,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 50 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | ||
|
|
HS2DAL M3G50NS, 2A, 200V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
7,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 32pF @ 4V, 1MHz | 50 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | ||
|
S15DLW RVGDIODE GEN PURP 200V 1.5A SOD123W Taiwan Semiconductor Corporation |
12,097 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | - | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1.5 A | |
|
|
HS2AA R3GDIODE GEN PURP 50V 1.5A DO214AC Taiwan Semiconductor Corporation |
5,244 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
S1JLSHRVGDIODE GEN PURP 600V 1.2A SOD123 Taiwan Semiconductor Corporation |
8,965 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 600 V | 600 V | 1.2A | -55°C ~ 150°C | 1.3 V @ 1.2 A | |
|
|
HS2DA R3GDIODE GEN PURP 200V 1.5A DO214AC Taiwan Semiconductor Corporation |
5,378 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
S8GC R7GDIODE GEN PURP 400V 8A DO214AB Taiwan Semiconductor Corporation |
3,218 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A | |
|
|
HS2BA R3GDIODE GEN PURP 100V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,346 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
SF26G A0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
7,902 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
HS2FA R3GDIODE GEN PURP 300V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,582 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
HS2JA R3GDIODE GEN PURP 600V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,380 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1.5 A | |
|
SS115L RVGDIODE SCHOTTKY 150V 1A SUB SMA Taiwan Semiconductor Corporation |
4,108 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 900 mV @ 1 A | |
|
|
SS1H15LS RVGDIODE SCHOTTKY 150V 1A SOD123HE Taiwan Semiconductor Corporation |
3,440 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A | |
|
|
HS1AL RVGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
5,970 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
SS13LHRVGDIODE SCHOTTKY 30V 1A SUB SMA Taiwan Semiconductor Corporation |
5,850 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A |
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