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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ES3J M6GDIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation |
2,389 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
ES3JHM6GDIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation |
2,679 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A |
|
|
ESH3B M6GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
3,397 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | |
|
|
ESH3C M6GDIODE GEN PURP 150V 3A DO214AB Taiwan Semiconductor Corporation |
2,430 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | |
|
|
ESH3D M6GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,590 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | |
|
|
HS3A M6GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
2,350 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
HS3B M6GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
2,336 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
HS3D M6GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,230 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
HS3F M6GDIODE GEN PURP 300V 3A DO214AB Taiwan Semiconductor Corporation |
2,351 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
HS3G M6GDIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation |
3,605 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
HS3J M6GDIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation |
3,341 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
HS3K M6GDIODE GEN PURP 800V 3A DO214AB Taiwan Semiconductor Corporation |
3,039 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
HS3M M6GDIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
3,659 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
HS5A M6GDIODE GEN PURP 50V 5A DO214AB Taiwan Semiconductor Corporation |
2,182 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 1 V @ 5 A | |
|
|
HS5B M6GDIODE GEN PURP 100V 5A DO214AB Taiwan Semiconductor Corporation |
2,529 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 1 V @ 5 A | |
|
|
HS5D M6GDIODE GEN PURP 200V 5A DO214AB Taiwan Semiconductor Corporation |
2,402 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 1 V @ 5 A | |
|
|
HS5F M6GDIODE GEN PURP 300V 5A DO214AB Taiwan Semiconductor Corporation |
2,872 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 5A | -55°C ~ 150°C | 1.7 V @ 5 A | |
|
|
HS5G M6GDIODE GEN PURP 400V 5A DO214AB Taiwan Semiconductor Corporation |
2,963 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.3 V @ 5 A | |
|
|
HS5J M6GDIODE GEN PURP 600V 5A DO214AB Taiwan Semiconductor Corporation |
2,442 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.7 V @ 5 A | |
|
|
HS5K M6GDIODE GEN PURP 800V 5A DO214AB Taiwan Semiconductor Corporation |
3,738 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 5A | -55°C ~ 150°C | 1.7 V @ 5 A |
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