Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
HSC119JTRF-E

HSC119JTRF-E

HSC119 - RECTIFIER DIODE, 1 ELEM

Rochester Electronics, LLC
80,000 -

RFQ

HSC119JTRF-E

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
RHRU5060

RHRU5060

RECTIFIER DIODE

Rochester Electronics, LLC
734 -

RFQ

RHRU5060

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Chassis Mount - 50 ns 500 µA @ 600 V 600 V 50A -65°C ~ 175°C 2.1 V @ 50 A
SB10-04A3-BT

SB10-04A3-BT

SB10-04A3 - SCHOTTKY DIODE 1A 40

Rochester Electronics, LLC
48,000 -

RFQ

SB10-04A3-BT

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 45pF @ 10V, 1MHz - 800 µA @ 40 V 40 V 1A 125°C (Max) 550 mV @ 1 A
RURG8070

RURG8070

RECTIFIER DIODE

Rochester Electronics, LLC
977 -

RFQ

RURG8070

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 200 ns 500 µA @ 700 V 700 V 80A -65°C ~ 175°C 1.9 V @ 80 A
IDW15E65D2

IDW15E65D2

IDW15E65 - SILICON POWER DIODE

Rochester Electronics, LLC
19,680 -

RFQ

IDW15E65D2

Ficha técnica

Bulk CoolSiC™+ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 47 ns 40 µA @ 650 V 650 V 30A -40°C ~ 175°C 2.3 V @ 15 A
US2BA

US2BA

RECTIFIER DIODE, 1.5A, 100V, DO-

Rochester Electronics, LLC
4,967 -

RFQ

US2BA

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
RURG8080

RURG8080

RECTIFIER DIODE

Rochester Electronics, LLC
703 -

RFQ

RURG8080

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 200 ns 500 µA @ 800 V 800 V 80A -65°C ~ 175°C 1.9 V @ 80 A
PMEG3020EPA,115

PMEG3020EPA,115

NEXPERIA PMEG3020EPA - RECTIFIER

Rochester Electronics, LLC
3,000 -

RFQ

PMEG3020EPA,115

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 150pF @ 1V, 1MHz 47 ns 2.5 mA @ 30 V 30 V 2A 150°C (Max) 470 mV @ 2 A
RURU5050

RURU5050

RECTIFIER DIODE

Rochester Electronics, LLC
580 -

RFQ

RURU5050

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Chassis Mount - 75 ns 500 µA @ 500 V 500 V 50A -65°C ~ 175°C 1.6 V @ 50 A
RHRU50100

RHRU50100

RECTIFIER DIODE

Rochester Electronics, LLC
280 -

RFQ

RHRU50100

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Chassis Mount - 95 ns 500 µA @ 1000 V 1000 V 50A -65°C ~ 175°C 3 V @ 50 A
GBPC1208

GBPC1208

BRIDGE RECTIFIER DIODE, 1 PHASE,

Rochester Electronics, LLC
500 -

RFQ

GBPC1208

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
SB360

SB360

RECTIFIER DIODE, SCHOTTKY, 3A, 6

Rochester Electronics, LLC
33,667 -

RFQ

SB360

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 3A -50°C ~ 150°C 680 mV @ 3 A
IDW40E65D2

IDW40E65D2

IDW40E65 - SILICON POWER DIODE

Rochester Electronics, LLC
1,485 -

RFQ

IDW40E65D2

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
IDH09G65C5XKSA2

IDH09G65C5XKSA2

SIC DIODES

Rochester Electronics, LLC
500 -

RFQ

IDH09G65C5XKSA2

Ficha técnica

Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 270pF @ 1V, 1MHz 0 ns 160 µA @ 650 V 650 V 9A (DC) -55°C ~ 175°C 1.7 V @ 9 A
RURU50120

RURU50120

RECTIFIER DIODE

Rochester Electronics, LLC
4,510 -

RFQ

RURU50120

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Chassis Mount - 200 ns 500 µA @ 1200 V 1200 V 50A -65°C ~ 175°C 2.1 V @ 50 A
IDDD06G65C6XTMA1

IDDD06G65C6XTMA1

SIC DIODES

Rochester Electronics, LLC
2,720 -

RFQ

IDDD06G65C6XTMA1

Ficha técnica

Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 302pF @ 1V, 1MHz 0 ns 20 µA @ 420 V 650 V 18A (DC) -55°C ~ 175°C -
RHRU50120

RHRU50120

RECTIFIER DIODE

Rochester Electronics, LLC
425 -

RFQ

RHRU50120

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Chassis Mount - 100 ns 500 µA @ 1200 V 1200 V 50A -65°C ~ 175°C 3.2 V @ 50 A
S1M

S1M

RECTIFIER DIODE, 1A, 1000V, DO-2

Rochester Electronics, LLC
1,863,721 -

RFQ

S1M

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 1.5 µs 5 µA @ 1 V 1000 V 1A -50°C ~ 150°C 1.1 V @ 1 A
PMEG2005AEL,315

PMEG2005AEL,315

NEXPERIA PMEG2005AEL - RECTIFIER

Rochester Electronics, LLC
1,217,229 -

RFQ

PMEG2005AEL,315

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 25pF @ 1V, 1MHz - 1.5 mA @ 20 V 20 V 500mA (DC) 150°C (Max) 440 mV @ 500 mA
1PS70SB40,115

1PS70SB40,115

NEXPERIA 1PS70SB40 - RECTIFIER D

Rochester Electronics, LLC
779,000 -

RFQ

1PS70SB40,115

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 5pF @ 0V, 1MHz - 10 µA @ 40 V 40 V 120mA (DC) 150°C (Max) 1 V @ 40 mA
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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