Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
DS135AE

DS135AE

DIODE GEN PURP 100V 1A DO204AL

Rochester Electronics, LLC
308,310 -

RFQ

DS135AE

Ficha técnica

Bulk,Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 10 µA @ 100 V 100 V 1A 150°C (Max) 1 V @ 1 A
DSA17G

DSA17G

DIODE GEN PURP 600V 1.7A AXIAL

Rochester Electronics, LLC
7,996 -

RFQ

DSA17G

Ficha técnica

Bulk,Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 10 µA @ 600 V 600 V 1.7A 150°C (Max) 1.05 V @ 1.7 A
DSA26G

DSA26G

DIODE GEN PURP 600V 2.6A AXIAL

Rochester Electronics, LLC
3,962 -

RFQ

DSA26G

Ficha técnica

Bulk,Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 10 µA @ 600 V 600 V 2.6A 150°C (Max) 1.05 V @ 2.6 A
DSF10TB

DSF10TB

DIODE GEN PURP 100V 1A DO204AL

Rochester Electronics, LLC
55,365 -

RFQ

DSF10TB

Ficha técnica

Bulk,Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 10 µA @ 100 V 100 V 1A 150°C (Max) 1 V @ 1 A
DSF10TC

DSF10TC

DIODE GEN PURP 200V 1A DO204AL

Rochester Electronics, LLC
24,000 -

RFQ

DSF10TC

Ficha técnica

Bulk,Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 10 µA @ 200 V 200 V 1A 150°C (Max) 1 V @ 1 A
DSK10B

DSK10B

DIODE GEN PURP 100V 1A AXIAL

Rochester Electronics, LLC
116,710 -

RFQ

DSK10B

Ficha técnica

Bulk,Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 10 µA @ 100 V 100 V 1A 150°C (Max) 1.1 V @ 1 A
MBR745G

MBR745G

DIODE SCHOTTKY 45V 7.5A TO220-2

Rochester Electronics, LLC
11,350 -

RFQ

MBR745G

Ficha técnica

Bulk,Tube SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 45 V 45 V 7.5A -65°C ~ 175°C 840 mV @ 15 A
MUR4100EG

MUR4100EG

DIODE GEN PURP 1000V 4A DO201AD

Rochester Electronics, LLC
13,000 -

RFQ

MUR4100EG

Ficha técnica

Bulk,Bulk SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 25 µA @ 1000 V 1000 V 4A -65°C ~ 175°C 1.85 V @ 4 A
DSK10C

DSK10C

DIODE GEN PURP 200V 1A AXIAL

Rochester Electronics, LLC
2,615 -

RFQ

DSK10C

Ficha técnica

Bulk,Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 10 µA @ 200 V 200 V 1A 150°C (Max) 1.1 V @ 1 A
DSK10E

DSK10E

DIODE GEN PURP 400V 1A AXIAL

Rochester Electronics, LLC
710,159 -

RFQ

DSK10E

Ficha técnica

Bulk,Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 10 µA @ 400 V 400 V 1A 150°C (Max) 1.1 V @ 1 A
1N4002G

1N4002G

DIODE GEN PURP 100V 1A DO41

Rochester Electronics, LLC
136,721 -

RFQ

1N4002G

Ficha técnica

Bulk,Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 100 V 100 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1N4004G

1N4004G

DIODE GEN PURP 400V 1A DO41

Rochester Electronics, LLC
3,306 -

RFQ

1N4004G

Ficha técnica

Bulk,Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
SB10-03A2

SB10-03A2

DIODE SCHOTTKY 30V 1A DO41

Rochester Electronics, LLC
9,031 -

RFQ

SB10-03A2

Ficha técnica

Bulk,Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - 30 ns 1 mA @ 30 V 30 V 1A 150°C (Max) 550 mV @ 1 A
SB10-03A3

SB10-03A3

DIODE SCHOTTKY 30V 1A DO41

Rochester Electronics, LLC
3,500 -

RFQ

SB10-03A3

Ficha técnica

Bulk,Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - 30 ns 1 mA @ 30 V 30 V 1A 125°C (Max) 550 mV @ 1 A
SB10-05A2

SB10-05A2

DIODE SCHOTTKY 50V 1A DO41

Rochester Electronics, LLC
6,440 -

RFQ

SB10-05A2

Ficha técnica

Bulk,Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - 30 ns 1 mA @ 50 V 50 V 1A 125°C (Max) 580 mV @ 1 A
SB10-05A3

SB10-05A3

DIODE SCHOTTKY 50V 1A DO41

Rochester Electronics, LLC
25,878 -

RFQ

SB10-05A3

Ficha técnica

Bulk,Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - 30 ns 1 mA @ 50 V 50 V 1A 125°C (Max) 580 mV @ 1 A
BYV29F-600,127

BYV29F-600,127

NOW WEEN - BYV29F-600 - ULTRAFAS

Rochester Electronics, LLC
1,000 -

RFQ

BYV29F-600,127

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 50 µA @ 600 V 600 V 9A 150°C (Max) 1.9 V @ 8 A
MBR1060G

MBR1060G

DIODE SCHOTTKY 60V 10A TO220-2

Rochester Electronics, LLC
1,450 -

RFQ

MBR1060G

Ficha técnica

Bulk,Tube SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 60 V 60 V 10A -65°C ~ 175°C 800 mV @ 10 A
MUR415G

MUR415G

DIODE GEN PURP 150V 4A DO201AD

Rochester Electronics, LLC
2,632 -

RFQ

MUR415G

Ficha técnica

Bulk,Bulk SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 5 µA @ 150 V 150 V 4A -65°C ~ 175°C 890 mV @ 4 A
MBR1045G

MBR1045G

DIODE SCHOTTKY 45V 10A TO220-2

Rochester Electronics, LLC
34,682 -

RFQ

MBR1045G

Ficha técnica

Bulk,Tube SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 45 V 45 V 10A -65°C ~ 175°C 840 mV @ 20 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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