Memória

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
AT93C66W-10SI-2.5

AT93C66W-10SI-2.5

IC EEPROM 4KBIT SPI 2MHZ 8SOIC

Microchip Technology
3,348 -

RFQ

AT93C66W-10SI-2.5

Ficha técnica

Tube - Obsolete Non-Volatile EEPROM EEPROM 4Kb (512 x 8, 256 x 16) SPI 2 MHz 10ms - 2.5V ~ 5.5V -40°C ~ 85°C (TA) Surface Mount
AT93C66W-10SI-2.7

AT93C66W-10SI-2.7

IC EEPROM 4KBIT SPI 2MHZ 8SOIC

Microchip Technology
3,443 -

RFQ

AT93C66W-10SI-2.7

Ficha técnica

Tube - Obsolete Non-Volatile EEPROM EEPROM 4Kb (512 x 8, 256 x 16) SPI 2 MHz 10ms - 2.7V ~ 5.5V -40°C ~ 85°C (TA) Surface Mount
FM27C512Q90

FM27C512Q90

IC EPROM 512KBIT PARALLEL 28CDIP

onsemi
3,169 -

RFQ

FM27C512Q90

Ficha técnica

Tube - Obsolete Non-Volatile EPROM EPROM - UV 512Kb (64K x 8) Parallel - - 90 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
FM93C86AM8

FM93C86AM8

IC EEPROM 16KBIT SPI 1MHZ 8SO

onsemi
3,517 -

RFQ

FM93C86AM8

Ficha técnica

Tube - Obsolete Non-Volatile EEPROM EEPROM 16Kb (2K x 8, 1K x 16) SPI 1 MHz 10ms - 4.5V ~ 5.5V 0°C ~ 70°C (TA) Surface Mount
FM93CS56LN

FM93CS56LN

IC EEPROM 2KBIT SPI 1MHZ 8DIP

onsemi
2,079 -

RFQ

FM93CS56LN

Ficha técnica

Tube - Obsolete Non-Volatile EEPROM EEPROM 2Kb (128 x 16) SPI 1 MHz 10ms - 2.7V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
FM93CS46N

FM93CS46N

IC EEPROM 1KBIT SPI 1MHZ 8DIP

onsemi
3,842 -

RFQ

FM93CS46N

Ficha técnica

Tube - Obsolete Non-Volatile EEPROM EEPROM 1Kb (64 x 16) SPI 1 MHz 10ms - 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
AT25HP512-10PC-2.7

AT25HP512-10PC-2.7

IC EEPROM 512KBIT SPI 10MHZ 8DIP

Microchip Technology
2,975 -

RFQ

AT25HP512-10PC-2.7

Ficha técnica

Tube - Obsolete Non-Volatile EEPROM EEPROM 512Kb (64K x 8) SPI 10 MHz 10ms - 2.7V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
AT24RF08CN-105C

AT24RF08CN-105C

IC EEPROM 8KBIT I2C 100KHZ 8SOIC

Microchip Technology
3,350 -

RFQ

Tube - Obsolete Non-Volatile EEPROM EEPROM 8Kb (1K x 8) I²C 100 kHz 10ms 450 ns 2.4V ~ 5.5V -40°C ~ 85°C (TJ) Surface Mount
DS1245Y-70IND

DS1245Y-70IND

IC NVSRAM 1MBIT PARALLEL 32EDIP

Analog Devices Inc./Maxim Integrated
3,824 -

RFQ

DS1245Y-70IND

Ficha técnica

Tube,Tube - Obsolete Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 1Mb (128K x 8) Parallel - 70ns 70 ns 4.5V ~ 5.5V -40°C ~ 85°C (TA) Through Hole
DS1230Y-150

DS1230Y-150

IC NVSRAM 256KBIT PAR 28EDIP

Analog Devices Inc./Maxim Integrated
3,068 -

RFQ

DS1230Y-150

Ficha técnica

Tube - Obsolete Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 256Kb (32K x 8) Parallel - 150ns 150 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
DS1230Y-200

DS1230Y-200

IC NVSRAM 256KBIT PAR 28EDIP

Analog Devices Inc./Maxim Integrated
3,870 -

RFQ

DS1230Y-200

Ficha técnica

Tube - Obsolete Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 256Kb (32K x 8) Parallel - 200ns 200 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
DS1230AB-200

DS1230AB-200

IC NVSRAM 256KBIT PAR 28EDIP

Analog Devices Inc./Maxim Integrated
3,286 -

RFQ

DS1230AB-200

Ficha técnica

Tube,Tube - Obsolete Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 256Kb (32K x 8) Parallel - 200ns 200 ns 4.75V ~ 5.25V 0°C ~ 70°C (TA) Through Hole
DS1230Y-120

DS1230Y-120

IC NVSRAM 256KBIT PAR 28EDIP

Analog Devices Inc./Maxim Integrated
2,145 -

RFQ

DS1230Y-120

Ficha técnica

Tube - Obsolete Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 256Kb (32K x 8) Parallel - 120ns 120 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
DS1230AB-100

DS1230AB-100

IC NVSRAM 256KBIT PAR 28EDIP

Analog Devices Inc./Maxim Integrated
3,114 -

RFQ

DS1230AB-100

Ficha técnica

Tube,Tube - Obsolete Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 256Kb (32K x 8) Parallel - 100ns 100 ns 4.75V ~ 5.25V 0°C ~ 70°C (TA) Through Hole
DS1230AB-120

DS1230AB-120

IC NVSRAM 256KBIT PAR 28EDIP

Analog Devices Inc./Maxim Integrated
3,138 -

RFQ

DS1230AB-120

Ficha técnica

Tube - Obsolete Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 256Kb (32K x 8) Parallel - 120ns 120 ns 4.75V ~ 5.25V 0°C ~ 70°C (TA) Through Hole
DS1220AB-120

DS1220AB-120

IC NVSRAM 16KBIT PARALLEL 24EDIP

Analog Devices Inc./Maxim Integrated
2,346 -

RFQ

DS1220AB-120

Ficha técnica

Tube - Obsolete Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 16Kb (2K x 8) Parallel - 120ns 120 ns 4.75V ~ 5.25V 0°C ~ 70°C (TA) Through Hole
DS2016-100

DS2016-100

IC SRAM 16KBIT PARALLEL 24DIP

Analog Devices Inc./Maxim Integrated
2,315 -

RFQ

DS2016-100

Ficha técnica

Tube - Obsolete Volatile SRAM SRAM 16Kb (2K x 8) Parallel - 100ns 100 ns 2.7V ~ 5.5V -40°C ~ 85°C (TA) Through Hole
DS1250Y-100

DS1250Y-100

IC NVSRAM 4MBIT PARALLEL 32EDIP

Analog Devices Inc./Maxim Integrated
2,538 -

RFQ

DS1250Y-100

Ficha técnica

Tube - Obsolete Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 4Mb (512K x 8) Parallel - 100ns 100 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
DS1230AB-70

DS1230AB-70

IC NVSRAM 256KBIT PAR 28EDIP

Analog Devices Inc./Maxim Integrated
3,744 -

RFQ

DS1230AB-70

Ficha técnica

Tube - Obsolete Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 256Kb (32K x 8) Parallel - 70ns 70 ns 4.75V ~ 5.25V 0°C ~ 70°C (TA) Through Hole
DS1230Y-70

DS1230Y-70

IC NVSRAM 256KBIT PAR 28EDIP

Analog Devices Inc./Maxim Integrated
127 -

RFQ

DS1230Y-70

Ficha técnica

Tube,Tube - Obsolete Non-Volatile NVSRAM NVSRAM (Non-Volatile SRAM) 256Kb (32K x 8) Parallel - 70ns 70 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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