Memória

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
EDB5432BEPA-1DAAT-F-R TR

EDB5432BEPA-1DAAT-F-R TR

IC DRAM 512MBIT PAR 168WFBGA

Micron Technology Inc.
3,972 -

RFQ

EDB5432BEPA-1DAAT-F-R TR

Ficha técnica

Tape & Reel (TR) - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 512Mb (16M x 32) Parallel 533 MHz - - 1.14V ~ 1.95V -40°C ~ 105°C (TC) Surface Mount
MTFC4GACAJCN-1M WT-TR

MTFC4GACAJCN-1M WT-TR

IC FLASH 32GBIT MMC 153VFBGA

Micron Technology Inc.
2,261 -

RFQ

Tape & Reel (TR) e•MMC™ Obsolete Non-Volatile FLASH FLASH - NAND 32Gb (4G x 8) MMC - - - 2.7V ~ 3.6V -25°C ~ 85°C (TA) Surface Mount
MTFC8GAKAJCN-1M WT

MTFC8GAKAJCN-1M WT

IC FLASH 64GBIT MMC 153VFBGA

Micron Technology Inc.
3,389 -

RFQ

Tray e•MMC™ Discontinued at Mosen Non-Volatile FLASH FLASH - NAND 64Gb (8G x 8) MMC - - - 2.7V ~ 3.6V -25°C ~ 85°C (TA) Surface Mount
MTFC4GACAJCN-1M WT

MTFC4GACAJCN-1M WT

IC FLASH 32GBIT MMC 153VFBGA

Micron Technology Inc.
2,163 -

RFQ

Tray e•MMC™ Discontinued at Mosen Non-Volatile FLASH FLASH - NAND 32Gb (4G x 8) MMC - - - 2.7V ~ 3.6V -25°C ~ 85°C (TA) Surface Mount
MTFC8GACAECN-1M WT

MTFC8GACAECN-1M WT

IC FLASH 64GBIT MMC 153WFBGA

Micron Technology Inc.
2,646 -

RFQ

Bulk e•MMC™ Obsolete Non-Volatile FLASH FLASH - NAND 64Gb (8G x 8) MMC - - - 2.7V ~ 3.6V -25°C ~ 85°C (TA) -
MT42L32M32D2AC-25 FAAT:A

MT42L32M32D2AC-25 FAAT:A

IC DRAM 1GBIT PARALLEL 134VFBGA

Micron Technology Inc.
2,741 -

RFQ

MT42L32M32D2AC-25 FAAT:A

Ficha técnica

Bulk - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 1Gb (32M x 32) Parallel 400 MHz - - 1.14V ~ 1.95V -40°C ~ 105°C (TC) Surface Mount
MT42L16M32D1AC-25 AIT:A

MT42L16M32D1AC-25 AIT:A

IC DRAM 512MBIT PAR 134VFBGA

Micron Technology Inc.
3,769 -

RFQ

MT42L16M32D1AC-25 AIT:A

Ficha técnica

Tray Automotive, AEC-Q100 Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 512Mb (16M x 32) Parallel 400 MHz - - 1.14V ~ 1.95V -40°C ~ 85°C (TC) Surface Mount
MT42L16M32D1AC-25 FAAT:A

MT42L16M32D1AC-25 FAAT:A

IC DRAM 512MBIT PAR 134VFBGA

Micron Technology Inc.
2,619 -

RFQ

MT42L16M32D1AC-25 FAAT:A

Ficha técnica

Bulk,Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 512Mb (16M x 32) Parallel 400 MHz - - 1.14V ~ 1.95V -40°C ~ 105°C (TC) Surface Mount
MT42L16M32D1LG-25 AAT:A

MT42L16M32D1LG-25 AAT:A

IC DRAM 512MBIT PAR 168WFBGA

Micron Technology Inc.
3,791 -

RFQ

MT42L16M32D1LG-25 AAT:A

Ficha técnica

Tray Automotive, AEC-Q100 Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 512Mb (16M x 32) Parallel 400 MHz - - 1.14V ~ 1.95V -40°C ~ 105°C (TC) Surface Mount
MT42L16M32D1LG-25 FAAT:A

MT42L16M32D1LG-25 FAAT:A

IC DRAM 512MBIT PAR 168WFBGA

Micron Technology Inc.
3,096 -

RFQ

MT42L16M32D1LG-25 FAAT:A

Ficha técnica

Tray Automotive, AEC-Q100 Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 512Mb (16M x 32) Parallel 400 MHz - - 1.14V ~ 1.95V -40°C ~ 105°C (TC) Surface Mount
MTFC4GACAEAM-1M WT

MTFC4GACAEAM-1M WT

IC FLASH 32GBIT MMC WFBGA

Micron Technology Inc.
2,106 -

RFQ

Bulk e•MMC™ Obsolete Non-Volatile FLASH FLASH - NAND 32Gb (4G x 8) MMC - - - 2.7V ~ 3.6V -25°C ~ 85°C (TA) -
MTFC4GACAECN-1M WT

MTFC4GACAECN-1M WT

IC FLASH 32GBIT MMC WFBGA

Micron Technology Inc.
3,242 -

RFQ

Bulk e•MMC™ Obsolete Non-Volatile FLASH FLASH - NAND 32Gb (4G x 8) MMC - - - 2.7V ~ 3.6V -25°C ~ 85°C (TA) -
MTFC4GMCAM-1M WT

MTFC4GMCAM-1M WT

IC FLASH 32GBIT MMC 153VFBGA

Micron Technology Inc.
3,894 -

RFQ

Bulk e•MMC™ Obsolete Non-Volatile FLASH FLASH - NAND 32Gb (4G x 8) MMC - - - 2.7V ~ 3.6V -25°C ~ 85°C (TA) -
MT41K256M16TW-093:P

MT41K256M16TW-093:P

IC DRAM 4GBIT PARALLEL 96FBGA

Micron Technology Inc.
3,241 -

RFQ

MT41K256M16TW-093:P

Ficha técnica

Tray - Active Volatile DRAM SDRAM - DDR3L 4Gb (256M x 16) Parallel 1.066 GHz - 20 ns 1.283V ~ 1.45V 0°C ~ 95°C (TC) Surface Mount
MT41K512M8DA-093:P

MT41K512M8DA-093:P

IC DRAM 4GBIT PARALLEL 78FBGA

Micron Technology Inc.
3,619 -

RFQ

MT41K512M8DA-093:P

Ficha técnica

Tray - Active Volatile DRAM SDRAM - DDR3L 4Gb (512M x 8) Parallel 1.066 GHz - 20 ns 1.283V ~ 1.45V 0°C ~ 95°C (TC) Surface Mount
MT41K512M8DA-107 IT:P

MT41K512M8DA-107 IT:P

IC DRAM 4GBIT PARALLEL 78FBGA

Micron Technology Inc.
2,371 -

RFQ

MT41K512M8DA-107 IT:P

Ficha técnica

Tray - Active Volatile DRAM SDRAM - DDR3L 4Gb (512M x 8) Parallel 933 MHz - 20 ns 1.283V ~ 1.45V -40°C ~ 95°C (TC) Surface Mount
MT41K1G8SN-125:A

MT41K1G8SN-125:A

IC DRAM 8GBIT PARALLEL 78FBGA

Micron Technology Inc.
2,999 -

RFQ

MT41K1G8SN-125:A

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - DDR3L 8Gb (1G x 8) Parallel 800 MHz - 13.75 ns 1.283V ~ 1.45V 0°C ~ 95°C (TC) Surface Mount
MT41K512M16HA-125:A

MT41K512M16HA-125:A

IC DRAM 8GBIT PARALLEL 96FBGA

Micron Technology Inc.
3,884 -

RFQ

MT41K512M16HA-125:A

Ficha técnica

Tape & Reel (TR),Tray - Obsolete Volatile DRAM SDRAM - DDR3L 8Gb (512M x 16) Parallel 800 MHz - 13.5 ns 1.283V ~ 1.45V 0°C ~ 95°C (TC) Surface Mount
MT41K1G8SN-107:A

MT41K1G8SN-107:A

IC DRAM 8GBIT PARALLEL 78FBGA

Micron Technology Inc.
2,424 -

RFQ

MT41K1G8SN-107:A

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - DDR3L 8Gb (1G x 8) Parallel 933 MHz - 20 ns 1.283V ~ 1.45V 0°C ~ 95°C (TC) Surface Mount
MT41K512M16HA-107:A

MT41K512M16HA-107:A

IC DRAM 8GBIT PARALLEL 96FBGA

Micron Technology Inc.
2,465 -

RFQ

MT41K512M16HA-107:A

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - DDR3L 8Gb (512M x 16) Parallel 933 MHz - 20 ns 1.283V ~ 1.45V 0°C ~ 95°C (TC) Surface Mount
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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