Memória

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MT29F512G08AUCBBH8-6IT:B TR

MT29F512G08AUCBBH8-6IT:B TR

IC FLASH 512GBIT PAR 152LBGA

Micron Technology Inc.
2,822 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND (SLC) 512Gb (64G x 8) Parallel 166 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT29F512G08AUCBBK8-6:B TR

MT29F512G08AUCBBK8-6:B TR

IC FLASH 512GBIT PARALLEL 166MHZ

Micron Technology Inc.
3,466 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND (SLC) 512Gb (64G x 8) Parallel 166 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) -
MT29F512G08AUEBBK8-12:B TR

MT29F512G08AUEBBK8-12:B TR

IC FLASH 512GBIT PAR 152TLGA

Micron Technology Inc.
2,861 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND (SLC) 512Gb (64G x 8) Parallel 83 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT40A1G8WE-075E AIT:B TR

MT40A1G8WE-075E AIT:B TR

IC DRAM 8GBIT PARALLEL 78FBGA

Micron Technology Inc.
3,908 -

RFQ

MT40A1G8WE-075E AIT:B TR

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q100 Obsolete Volatile DRAM SDRAM - DDR4 8Gb (1G x 8) Parallel 1.33 GHz - - 1.14V ~ 1.26V -40°C ~ 95°C (TC) Surface Mount
MT40A256M16GE-062E IT:B TR

MT40A256M16GE-062E IT:B TR

IC DRAM 4GBIT PARALLEL 96FBGA

Micron Technology Inc.
2,957 -

RFQ

MT40A256M16GE-062E IT:B TR

Ficha técnica

Tape & Reel (TR) - Obsolete Volatile DRAM SDRAM - DDR4 4Gb (256M x 16) Parallel 1.6 GHz - - 1.14V ~ 1.26V -40°C ~ 95°C (TC) Surface Mount
MT40A256M16GE-075E IT:B TR

MT40A256M16GE-075E IT:B TR

IC DRAM 4GBIT PARALLEL 96FBGA

Micron Technology Inc.
3,061 -

RFQ

MT40A256M16GE-075E IT:B TR

Ficha técnica

Tape & Reel (TR) - Obsolete Volatile DRAM SDRAM - DDR4 4Gb (256M x 16) Parallel 1.33 GHz - - 1.14V ~ 1.26V -40°C ~ 95°C (TC) Surface Mount
MT40A2G8FSE-093E:A TR

MT40A2G8FSE-093E:A TR

IC DRAM 16GBIT PARALLEL 78FBGA

Micron Technology Inc.
2,434 -

RFQ

MT40A2G8FSE-093E:A TR

Ficha técnica

Tape & Reel (TR) - Obsolete Volatile DRAM SDRAM - DDR4 16Gb (2G x 8) Parallel 1.066 GHz - - 1.14V ~ 1.26V 0°C ~ 95°C (TC) Surface Mount
MT29F512G08CECBBJ4-37:B TR

MT29F512G08CECBBJ4-37:B TR

IC FLASH 512GBIT PAR 132VBGA

Micron Technology Inc.
2,988 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND (MLC) 512Gb (64G x 8) Parallel 267 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F512G08CECBBJ4-37ES:B TR

MT29F512G08CECBBJ4-37ES:B TR

IC FLASH 512GBIT PAR 132VBGA

Micron Technology Inc.
3,635 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NAND (MLC) 512Gb (64G x 8) Parallel 267 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F512G08CEHBBJ4-3RES:B TR

MT29F512G08CEHBBJ4-3RES:B TR

IC FLASH 512GBIT PAR 132VBGA

Micron Technology Inc.
3,214 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NAND (MLC) 512Gb (64G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F512G08CFCBBWP-10:B TR

MT29F512G08CFCBBWP-10:B TR

IC FLASH 512GBIT PAR 48TSOP I

Micron Technology Inc.
3,164 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND (MLC) 512Gb (64G x 8) Parallel 100 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F512G08CFCBBWP-10ES:B TR

MT29F512G08CFCBBWP-10ES:B TR

IC FLASH 512GBIT PAR 48TSOP I

Micron Technology Inc.
2,178 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NAND (MLC) 512Gb (64G x 8) Parallel 100 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F512G08CFCBBWP-10M:B TR

MT29F512G08CFCBBWP-10M:B TR

IC FLASH 512GBIT PAR 48TSOP I

Micron Technology Inc.
3,399 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND (MLC) 512Gb (64G x 8) Parallel 100 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT58L128L32D1T-10

MT58L128L32D1T-10

IC SRAM 4MBIT PARALLEL 100TQFP

Micron Technology Inc.
3,764 -

RFQ

MT58L128L32D1T-10

Ficha técnica

Bulk SYNCBURST™ Active Volatile SRAM SRAM - Synchronous 4Mb (128K x 32) Parallel 100 MHz - 5 ns 3.135V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT58L256L32FS-8.5IT

MT58L256L32FS-8.5IT

CACHE SRAM, 256KX32, 8.5NS PQFP1

Micron Technology Inc.
3,831 -

RFQ

MT58L256L32FS-8.5IT

Ficha técnica

Bulk * Active - - - - - - - - - - -
MT58L256L36FS-8.5

MT58L256L36FS-8.5

CACHE SRAM, 256KX36, 8.5NS PQFP1

Micron Technology Inc.
2,085 -

RFQ

Bulk * Active - - - - - - - - - - -
MT28GU256AAA2EGC-0AAT

MT28GU256AAA2EGC-0AAT

IC FLASH 256MBIT PARALLEL 64TBGA

Micron Technology Inc.
2,806 -

RFQ

Bulk Automotive, AEC-Q100 Not For New Designs Non-Volatile FLASH FLASH - NOR 256Mb (32M x 8) Parallel 133 MHz - 96 ns 1.7V ~ 2V -40°C ~ 105°C (TA) Surface Mount
MT29F512G08CKCBBH7-6R:B TR

MT29F512G08CKCBBH7-6R:B TR

IC FLASH 512GBIT PAR 152TBGA

Micron Technology Inc.
2,460 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND (MLC) 512Gb (64G x 8) Parallel 166 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F512G08CKEABH7-12IT:A TR

MT29F512G08CKEABH7-12IT:A TR

IC FLASH 512GBIT PAR 152TBGA

Micron Technology Inc.
2,105 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND (MLC) 512Gb (64G x 8) Parallel 83 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT29F512G08CKECBH7-12:C TR

MT29F512G08CKECBH7-12:C TR

IC FLASH 512GBIT PAR 152TBGA

Micron Technology Inc.
3,143 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND (MLC) 512Gb (64G x 8) Parallel 83 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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