Memória

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MT53E256M16D1DS-046 WT:B

MT53E256M16D1DS-046 WT:B

IC DRAM LPDDR4 WFBGA

Micron Technology Inc.
3,462 -

RFQ

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR4 4Gb (256M x 16) - 2.133 GHz - - 1.1V -30°C ~ 85°C (TC) -
MT25QL512ABB8E12-0SIT

MT25QL512ABB8E12-0SIT

IC FLASH 512MBIT SPI 24TPBGA

Micron Technology Inc.
2,382 -

RFQ

MT25QL512ABB8E12-0SIT

Ficha técnica

Tray - Active Non-Volatile FLASH FLASH - NOR 512Mb (64M x 8) SPI 133 MHz 8ms, 2.8ms - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT41K128M16JT-107 AAT:K

MT41K128M16JT-107 AAT:K

IC DRAM 2GBIT PARALLEL 96FBGA

Micron Technology Inc.
2,183 -

RFQ

MT41K128M16JT-107 AAT:K

Ficha técnica

Tray Automotive, AEC-Q100 Active Volatile DRAM SDRAM - DDR3L 2Gb (128M x 16) Parallel 933 MHz 15ns 20 ns 1.283V ~ 1.45V -40°C ~ 105°C (TC) Surface Mount
MT53E256M16D1FW-046 AIT:B

MT53E256M16D1FW-046 AIT:B

IC DRAM LPDDR4 4G FBGA

Micron Technology Inc.
2,321 -

RFQ

Tray Automotive, AEC-Q100 Active Volatile DRAM SDRAM - Mobile LPDDR4 4Gb (256M x 16) - 2.133 GHz - - 1.1V -40°C ~ 95°C (TC) -
MT49H16M36SJ-25 IT:B TR

MT49H16M36SJ-25 IT:B TR

IC DRAM 576MBIT PARALLEL 144FBGA

Micron Technology Inc.
3,444 -

RFQ

MT49H16M36SJ-25 IT:B TR

Ficha técnica

Tape & Reel (TR) - Obsolete Volatile DRAM DRAM 576Mb (16M x 36) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V -40°C ~ 85°C (TA) Surface Mount
MT49H8M36SJ-25E:B TR

MT49H8M36SJ-25E:B TR

IC DRAM 288MBIT PARALLEL 144FBGA

Micron Technology Inc.
2,823 -

RFQ

MT49H8M36SJ-25E:B TR

Ficha técnica

Tape & Reel (TR) - Obsolete Volatile DRAM DRAM 288Mb (8M x 36) Parallel 400 MHz - 15 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H8M36SJ-25 IT:B TR

MT49H8M36SJ-25 IT:B TR

IC DRAM 288MBIT PARALLEL 144FBGA

Micron Technology Inc.
3,785 -

RFQ

MT49H8M36SJ-25 IT:B TR

Ficha técnica

Tape & Reel (TR) - Obsolete Volatile DRAM DRAM 288Mb (8M x 36) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V -40°C ~ 85°C (TA) Surface Mount
MT49H32M18SJ-25:B TR

MT49H32M18SJ-25:B TR

IC DRAM 576MBIT PARALLEL 144FBGA

Micron Technology Inc.
2,457 -

RFQ

MT49H32M18SJ-25:B TR

Ficha técnica

Tape & Reel (TR) - Obsolete Volatile DRAM DRAM 576Mb (32M x 18) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H64M9SJ-25E:B TR

MT49H64M9SJ-25E:B TR

IC DRAM 576MBIT PARALLEL 144FBGA

Micron Technology Inc.
2,929 -

RFQ

MT49H64M9SJ-25E:B TR

Ficha técnica

Tape & Reel (TR) - Obsolete Volatile DRAM DRAM 576Mb (64M x 9) Parallel 400 MHz - 15 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H32M18SJ-25E:B TR

MT49H32M18SJ-25E:B TR

IC DRAM 576MBIT PARALLEL 144FBGA

Micron Technology Inc.
3,272 -

RFQ

MT49H32M18SJ-25E:B TR

Ficha técnica

Tape & Reel (TR) - Obsolete Volatile DRAM DRAM 576Mb (32M x 18) Parallel 400 MHz - 15 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H32M18SJ-18:B TR

MT49H32M18SJ-18:B TR

IC DRAM 576MBIT PARALLEL 144FBGA

Micron Technology Inc.
3,576 -

RFQ

MT49H32M18SJ-18:B TR

Ficha técnica

Tape & Reel (TR) - Obsolete Volatile DRAM DRAM 576Mb (32M x 18) Parallel 533 MHz - 15 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H32M18CSJ-18:B TR

MT49H32M18CSJ-18:B TR

IC DRAM 576MBIT PARALLEL 144FBGA

Micron Technology Inc.
2,062 -

RFQ

MT49H32M18CSJ-18:B TR

Ficha técnica

Tape & Reel (TR) - Obsolete Volatile DRAM DRAM 576Mb (32M x 18) Parallel 533 MHz - 15 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H8M36SJ-25E:B

MT49H8M36SJ-25E:B

IC DRAM 288MBIT PARALLEL 144FBGA

Micron Technology Inc.
3,584 -

RFQ

MT49H8M36SJ-25E:B

Ficha técnica

Tray - Obsolete Volatile DRAM DRAM 288Mb (8M x 36) Parallel 400 MHz - 15 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H16M36SJ-25 IT:B

MT49H16M36SJ-25 IT:B

IC DRAM 576MBIT PARALLEL 144FBGA

Micron Technology Inc.
3,734 -

RFQ

MT49H16M36SJ-25 IT:B

Ficha técnica

Tray - Obsolete Volatile DRAM DRAM 576Mb (16M x 36) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V -40°C ~ 85°C (TA) Surface Mount
MT49H16M18CSJ-25:B

MT49H16M18CSJ-25:B

IC DRAM 288MBIT PARALLEL 144FBGA

Micron Technology Inc.
3,919 -

RFQ

MT49H16M18CSJ-25:B

Ficha técnica

Tray - Obsolete Volatile DRAM DRAM 288Mb (16M x 18) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H8M36SJ-25 IT:B

MT49H8M36SJ-25 IT:B

IC DRAM 288MBIT PARALLEL 144FBGA

Micron Technology Inc.
2,393 -

RFQ

MT49H8M36SJ-25 IT:B

Ficha técnica

Tray - Obsolete Volatile DRAM DRAM 288Mb (8M x 36) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V -40°C ~ 85°C (TA) Surface Mount
MT49H16M36SJ-25:B

MT49H16M36SJ-25:B

IC DRAM 576MBIT PARALLEL 144FBGA

Micron Technology Inc.
2,207 -

RFQ

MT49H16M36SJ-25:B

Ficha técnica

Tray - Obsolete Volatile DRAM DRAM 576Mb (16M x 36) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H8M36SJ-25:B

MT49H8M36SJ-25:B

IC DRAM 288MBIT PARALLEL 144FBGA

Micron Technology Inc.
3,855 -

RFQ

MT49H8M36SJ-25:B

Ficha técnica

Tray - Active Volatile DRAM DRAM 288Mb (8M x 36) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H32M9SJ-25:B

MT49H32M9SJ-25:B

IC DRAM 288MBIT PARALLEL 144FBGA

Micron Technology Inc.
2,657 -

RFQ

MT49H32M9SJ-25:B

Ficha técnica

Tray - Obsolete Volatile DRAM DRAM 288Mb (32M x 9) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H16M18SJ-25 IT:B

MT49H16M18SJ-25 IT:B

IC DRAM 288MBIT PARALLEL 144FBGA

Micron Technology Inc.
3,716 -

RFQ

MT49H16M18SJ-25 IT:B

Ficha técnica

Tray - Obsolete Volatile DRAM DRAM 288Mb (16M x 18) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V -40°C ~ 85°C (TA) Surface Mount
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1500+ Média diária de RFQ
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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