Memória

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MT40A512M16JY-075E:B TR

MT40A512M16JY-075E:B TR

IC DRAM 8GBIT PARALLEL 96FBGA

Micron Technology Inc.
3,220 -

RFQ

MT40A512M16JY-075E:B TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete Volatile DRAM SDRAM - DDR4 8Gb (512M x 16) Parallel 1.33 GHz - - 1.14V ~ 1.26V 0°C ~ 95°C (TC) Surface Mount
MT40A512M16JY-083E:B TR

MT40A512M16JY-083E:B TR

IC DRAM 8GBIT PARALLEL 96FBGA

Micron Technology Inc.
2,428 -

RFQ

MT40A512M16JY-083E:B TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete Volatile DRAM SDRAM - DDR4 8Gb (512M x 16) Parallel 1.2 GHz - - 1.14V ~ 1.26V 0°C ~ 95°C (TC) Surface Mount
MT40A512M8RH-075E AAT:B TR

MT40A512M8RH-075E AAT:B TR

IC DRAM 4GBIT PARALLEL 78FBGA

Micron Technology Inc.
2,482 -

RFQ

MT40A512M8RH-075E AAT:B TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Obsolete Volatile DRAM SDRAM - DDR4 4Gb (512M x 8) Parallel 1.33 GHz - - 1.14V ~ 1.26V -40°C ~ 105°C (TC) Surface Mount
MT40A512M8RH-075E AIT:B TR

MT40A512M8RH-075E AIT:B TR

IC DRAM 4GBIT PARALLEL 78FBGA

Micron Technology Inc.
3,125 -

RFQ

MT40A512M8RH-075E AIT:B TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Obsolete Volatile DRAM SDRAM - DDR4 4Gb (512M x 8) Parallel 1.33 GHz - - 1.14V ~ 1.26V -40°C ~ 95°C (TC) Surface Mount
MT41K128M8DA-107 AIT:J TR

MT41K128M8DA-107 AIT:J TR

IC DRAM 1GBIT PARALLEL 78FBGA

Micron Technology Inc.
2,178 -

RFQ

MT41K128M8DA-107 AIT:J TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Obsolete Volatile DRAM SDRAM - DDR3L 1Gb (128M x 8) Parallel 933 MHz - 20 ns 1.283V ~ 1.45V -40°C ~ 95°C (TC) Surface Mount
MT41K1G16DGA-125:A TR

MT41K1G16DGA-125:A TR

IC DRAM 16GBIT PARALLEL 96FBGA

Micron Technology Inc.
3,516 -

RFQ

MT41K1G16DGA-125:A TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete Volatile DRAM SDRAM - DDR3L 16Gb (1G x 16) Parallel 800 MHz - 13.75 ns 1.283V ~ 1.45V 0°C ~ 95°C (TC) Surface Mount
MT29RZ4B2DZZHHWD-18I.84F

MT29RZ4B2DZZHHWD-18I.84F

IC FLASH RAM 4GBIT PAR 162VFBGA

Micron Technology Inc.
3,046 -

RFQ

Tray - Obsolete Non-Volatile FLASH, RAM FLASH - NAND, DRAM - LPDDR2 4Gb (128M x 32)(NAND), 2G (64M x 32)(LPDDR2) Parallel 533 MHz - - 1.8V -40°C ~ 85°C (TA) Surface Mount
EDB4064B4PB-1DIT-F-R TR

EDB4064B4PB-1DIT-F-R TR

IC DRAM 4GBIT PARALLEL 216WFBGA

Micron Technology Inc.
2,681 -

RFQ

EDB4064B4PB-1DIT-F-R TR

Ficha técnica

Tape & Reel (TR) - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 4Gb (64M x 64) Parallel 533 MHz - - 1.14V ~ 1.95V -40°C ~ 85°C (TC) Surface Mount
EDFP112A3PB-GD-F-D TR

EDFP112A3PB-GD-F-D TR

IC DRAM 24GBIT PARALLEL 800MHZ

Micron Technology Inc.
2,267 -

RFQ

Tape & Reel (TR) - Obsolete Volatile DRAM SDRAM - Mobile LPDDR3 24Gb (192M x 128) Parallel 800 MHz - - 1.14V ~ 1.95V -30°C ~ 85°C (TA) -
EDFP112A3PB-GD-F-R TR

EDFP112A3PB-GD-F-R TR

IC DRAM 24GBIT PARALLEL 800MHZ

Micron Technology Inc.
3,293 -

RFQ

Tape & Reel (TR) - Obsolete Volatile DRAM SDRAM - Mobile LPDDR3 24Gb (192M x 128) Parallel 800 MHz - - 1.14V ~ 1.95V -30°C ~ 85°C (TA) -
EDFP112A3PB-JD-F-D TR

EDFP112A3PB-JD-F-D TR

IC DRAM 24GBIT PARALLEL 933MHZ

Micron Technology Inc.
3,664 -

RFQ

Tape & Reel (TR) - Obsolete Volatile DRAM SDRAM - Mobile LPDDR3 24Gb (192M x 128) Parallel 933 MHz - - 1.14V ~ 1.95V -30°C ~ 85°C (TA) -
EDFP112A3PB-JD-F-R TR

EDFP112A3PB-JD-F-R TR

IC DRAM 24GBIT PARALLEL 933MHZ

Micron Technology Inc.
2,440 -

RFQ

Tape & Reel (TR) - Obsolete Volatile DRAM SDRAM - Mobile LPDDR3 24Gb (192M x 128) Parallel 933 MHz - - 1.14V ~ 1.95V -30°C ~ 85°C (TA) -
MTFC4GMDEA-4M IT TR

MTFC4GMDEA-4M IT TR

IC FLASH 32GBIT MMC 153WFBGA

Micron Technology Inc.
3,208 -

RFQ

Tape & Reel (TR) e•MMC™ Obsolete Non-Volatile FLASH FLASH - NAND 32Gb (4G x 8) MMC - - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
EDFP112A3PB-GDTJ-F-R

EDFP112A3PB-GDTJ-F-R

IC DRAM 24GBIT PARALLEL 800MHZ

Micron Technology Inc.
2,721 -

RFQ

Tape & Reel (TR) - Obsolete Volatile DRAM SDRAM - Mobile LPDDR3 24Gb (192M x 128) Parallel 800 MHz - - 1.14V ~ 1.95V -30°C ~ 105°C (TC) -
EDFP112A3PB-GD-F-D

EDFP112A3PB-GD-F-D

IC DRAM 24GBIT PARALLEL 800MHZ

Micron Technology Inc.
3,982 -

RFQ

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR3 24Gb (192M x 128) Parallel 800 MHz - - 1.14V ~ 1.95V -30°C ~ 85°C (TA) -
EDFP112A3PB-GD-F-R

EDFP112A3PB-GD-F-R

IC DRAM 24GBIT PARALLEL 800MHZ

Micron Technology Inc.
3,745 -

RFQ

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR3 24Gb (192M x 128) Parallel 800 MHz - - 1.14V ~ 1.95V -30°C ~ 85°C (TA) -
EDFP112A3PB-JD-F-D

EDFP112A3PB-JD-F-D

IC DRAM 24GBIT PARALLEL 933MHZ

Micron Technology Inc.
2,779 -

RFQ

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR3 24Gb (192M x 128) Parallel 933 MHz - - 1.14V ~ 1.95V -30°C ~ 85°C (TA) -
EDFP112A3PB-JD-F-R

EDFP112A3PB-JD-F-R

IC DRAM 24GBIT PARALLEL 933MHZ

Micron Technology Inc.
2,661 -

RFQ

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR3 24Gb (192M x 128) Parallel 933 MHz - - 1.14V ~ 1.95V -30°C ~ 85°C (TA) -
MT42L16M32D1U67MWC2

MT42L16M32D1U67MWC2

IC LPDDR2 SDRAM 1GBIT

Micron Technology Inc.
2,967 -

RFQ

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 512Mb (16M x 32) Parallel - - - 1.14V ~ 1.3V -40°C ~ 85°C (TC) -
MT42L32M16D1U67MWC1

MT42L32M16D1U67MWC1

LPDDR2

Micron Technology Inc.
2,853 -

RFQ

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 512Mb (32M x 16) Parallel - - - 1.14V ~ 1.3V -25°C ~ 85°C (TC) -
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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