Memória

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MT40A1G8SA-062E AAT:E TR

MT40A1G8SA-062E AAT:E TR

IC DRAM 8GBIT PARALLEL 78FBGA

Micron Technology Inc.
3,483 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q100 Active Volatile DRAM SDRAM - DDR4 8Gb (1G x 8) Parallel 1.6 GHz 15ns 19 ns 1.14V ~ 1.26V -40°C ~ 105°C (TC) Surface Mount
MT40A512M16LY-062E AAT:E TR

MT40A512M16LY-062E AAT:E TR

IC DRAM 8GBIT PARALLEL 96FBGA

Micron Technology Inc.
2,043 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q100 Active Volatile DRAM SDRAM - DDR4 8Gb (512M x 16) Parallel 1.6 GHz 15ns 19 ns 1.14V ~ 1.26V -40°C ~ 105°C (TC) Surface Mount
MT40A1G8SA-062E AAT:E

MT40A1G8SA-062E AAT:E

IC DRAM 8GBIT PARALLEL 78FBGA

Micron Technology Inc.
3,764 -

RFQ

Tray Automotive, AEC-Q100 Active Volatile DRAM SDRAM - DDR4 8Gb (1G x 8) Parallel 1.6 GHz 15ns 19 ns 1.14V ~ 1.26V -40°C ~ 105°C (TC) Surface Mount
MT40A512M16LY-062E AAT:E

MT40A512M16LY-062E AAT:E

IC DRAM 8GBIT PARALLEL 96FBGA

Micron Technology Inc.
2,693 -

RFQ

Tray Automotive, AEC-Q100 Active Volatile DRAM SDRAM - DDR4 8Gb (512M x 16) Parallel 1.6 GHz 15ns 19 ns 1.14V ~ 1.26V -40°C ~ 105°C (TC) Surface Mount
MT53E384M32D2DS-053 WT:E TR

MT53E384M32D2DS-053 WT:E TR

IC DRAM 12GBIT 1.866GHZ 200WFBGA

Micron Technology Inc.
2,170 -

RFQ

Tape & Reel (TR) - Active Volatile DRAM SDRAM - Mobile LPDDR4 12Gb (384M x 32) - 1.866 GHz - - 1.1V -30°C ~ 85°C (TC) Surface Mount
MT29F256G08EBHBFB16C3WC1-FES

MT29F256G08EBHBFB16C3WC1-FES

IC FLASH 256G PARALLEL

Micron Technology Inc.
3,360 -

RFQ

Bulk - Active Non-Volatile FLASH FLASH - NAND (TLC) 256Gb (32G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT53E384M32D2DS-046 AAT:E TR

MT53E384M32D2DS-046 AAT:E TR

IC DRAM 12GBIT 2.133GHZ 200WFBGA

Micron Technology Inc.
2,708 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q100 Last Time Buy Volatile DRAM SDRAM - Mobile LPDDR4 12Gb (384M x 32) - 2.133 GHz - - 1.1V -40°C ~ 105°C (TC) Surface Mount
MTFC8GACAEDQ-K1 AIT TR

MTFC8GACAEDQ-K1 AIT TR

IC FLASH 64GBIT MMC 100LBGA

Micron Technology Inc.
2,488 -

RFQ

Tape & Reel (TR) e•MMC™ Active Non-Volatile FLASH FLASH - NAND 64Gb (8G x 8) MMC - - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MTFC8GACAENS-K1 AIT TR

MTFC8GACAENS-K1 AIT TR

IC FLASH 64GBIT MMC 153TFBGA

Micron Technology Inc.
2,308 -

RFQ

Tape & Reel (TR) e•MMC™ Active Non-Volatile FLASH FLASH - NAND 64Gb (8G x 8) MMC - - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MTFC8GACAEDQ-AIT TR

MTFC8GACAEDQ-AIT TR

MODULE EMMC 64G LBGA

Micron Technology Inc.
2,078 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - -
MTFC8GACAENS-5M AIT TR

MTFC8GACAENS-5M AIT TR

IC FLASH 64GBIT MMC 153TFBGA

Micron Technology Inc.
3,463 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NAND 64Gb (8G x 8) MMC - - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MTFC8GACAENS-AIT TR

MTFC8GACAENS-AIT TR

IC MODULE EMMC 64G 153TFBGA

Micron Technology Inc.
3,082 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - Surface Mount
MT51J256M32HF-70:B TR

MT51J256M32HF-70:B TR

IC RAM 8GBIT PARALLEL 170FBGA

Micron Technology Inc.
2,298 -

RFQ

MT51J256M32HF-70:B TR

Ficha técnica

Tape & Reel (TR) - Active Volatile RAM SGRAM - GDDR5 8Gb (256M x 32) Parallel 1.75 GHz - - 1.31V ~ 1.39V, 1.46V ~ 1.55V 0°C ~ 95°C (TC) Surface Mount
MT40A512M16Z11BWC1

MT40A512M16Z11BWC1

IC DRAM 8GBIT PARALLEL WAFER

Micron Technology Inc.
2,180 -

RFQ

Tray - Active Volatile DRAM SDRAM - DDR4 8Gb (512M x 16) Parallel - - - 1.14V ~ 1.26V - Surface Mount
MT40A1G8Z11BWC1

MT40A1G8Z11BWC1

IC DRAM 8GBIT PARALLEL WAFER

Micron Technology Inc.
3,949 -

RFQ

Tray - Active Volatile DRAM SDRAM - DDR4 8Gb (1G x 8) Parallel - - - 1.14V ~ 1.26V - Surface Mount
MT29F512G08EBHAFJ4-3ITF:A TR

MT29F512G08EBHAFJ4-3ITF:A TR

TLC 512G 64GX8 VBGA

Micron Technology Inc.
3,845 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NAND (TLC) 512Gb (64G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT29F512G08EBHAFJ4-3ITF:A

MT29F512G08EBHAFJ4-3ITF:A

TLC 512G 64GX8 VBGA

Micron Technology Inc.
2,250 -

RFQ

Bulk - Active Non-Volatile FLASH FLASH - NAND (TLC) 512Gb (64G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT53D512M16D1Z11MWC2

MT53D512M16D1Z11MWC2

LPDDR4 8G DIE 512MX16

Micron Technology Inc.
2,465 -

RFQ

Bulk * Active - - - - - - - - - - -
MT28HL04GABB1EPG-0GCT

MT28HL04GABB1EPG-0GCT

NOR FLASH 256MX16 PLASTIC 3.3V

Micron Technology Inc.
2,084 -

RFQ

Bulk - Active - - - - - - - - - - -
MT28EW01GABA1LJS-0SIT TR

MT28EW01GABA1LJS-0SIT TR

IC FLASH 1GBIT PARALLEL 56TSOP

Micron Technology Inc.
3,112 -

RFQ

MT28EW01GABA1LJS-0SIT TR

Ficha técnica

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NOR 1Gb (128M x 8, 64M x 16) Parallel - 60ns 95 ns 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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