Memória

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MT29F4T08EUHBFM4-T:B

MT29F4T08EUHBFM4-T:B

IC FLASH 4TB PARALLEL

Micron Technology Inc.
2,836 -

RFQ

Bulk - Active Non-Volatile FLASH FLASH - NAND (TLC) 4Tb (512G x 8) Parallel - - - 1.7V ~ 1.95V 0°C ~ 70°C (TA) -
MT29F4T08EUHBFM4-T:B TR

MT29F4T08EUHBFM4-T:B TR

IC FLASH 4TB PARALLEL

Micron Technology Inc.
2,850 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NAND (TLC) 4Tb (512G x 8) Parallel - - - 1.7V ~ 1.95V 0°C ~ 70°C (TA) -
MT53D768M64D8SQ-053 WT:E

MT53D768M64D8SQ-053 WT:E

IC DRAM 48GBIT 1866MHZ 556VFBGA

Micron Technology Inc.
3,740 -

RFQ

Tray - Not For New Designs Volatile DRAM SDRAM - Mobile LPDDR4 48Gb (768M x 64) - 1.866 GHz - - 1.1V -30°C ~ 85°C (TC) Surface Mount
MT53D768M64D8SQ-053 WT:E TR

MT53D768M64D8SQ-053 WT:E TR

IC DRAM 48GBIT 1866MHZ 556VFBGA

Micron Technology Inc.
2,153 -

RFQ

Tape & Reel (TR) - Not For New Designs Volatile DRAM SDRAM - Mobile LPDDR4 48Gb (768M x 64) - 1.866 GHz - - 1.1V -30°C ~ 85°C (TC) Surface Mount
MT29E1T08CMHBBJ4-3:B TR

MT29E1T08CMHBBJ4-3:B TR

IC FLASH 1TB PARALLEL 132VBGA

Micron Technology Inc.
2,905 -

RFQ

Tape & Reel (TR) - Not For New Designs Non-Volatile FLASH FLASH - NAND 1Tb (128G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29E1T08CMHBBJ4-3:B

MT29E1T08CMHBBJ4-3:B

IC FLASH 1TB PARALLEL 132VBGA

Micron Technology Inc.
2,195 -

RFQ

Tray - Not For New Designs Non-Volatile FLASH FLASH - NAND 1Tb (128G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F4T08EULCEM4-R:C TR

MT29F4T08EULCEM4-R:C TR

IC FLASH 4TB PARALLEL

Micron Technology Inc.
2,764 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NAND (TLC) 4Tb (512G x 8) Parallel - - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) -
MT40A8G4CLU-062H:E TR

MT40A8G4CLU-062H:E TR

IC FLASH 32GBIT PARALLEL 78FBGA

Micron Technology Inc.
3,959 -

RFQ

Tape & Reel (TR) TwinDie™ Active Non-Volatile DRAM SDRAM - DDR4 32Gb (8G x 4) Parallel 1.6 GHz - 13.75 ns 1.14V ~ 1.26V 0°C ~ 95°C (TC) Surface Mount
MTFC128GAJAECE-AIT TR

MTFC128GAJAECE-AIT TR

IC FLASH 1TB MMC 169LFBGA

Micron Technology Inc.
3,713 -

RFQ

Tape & Reel (TR) e•MMC™ Active Non-Volatile FLASH FLASH - NAND 1Tb (128G x 8) MMC - - - - -40°C ~ 85°C (TA) Surface Mount
MT29F128G08AJAAAWP-ITZ:A TR

MT29F128G08AJAAAWP-ITZ:A TR

IC FLASH 128GBIT PAR 48TSOP I

Micron Technology Inc.
3,561 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NAND 128Gb (16G x 8) Parallel - - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT29F128G08AKCABH2-10ITZ:A TR

MT29F128G08AKCABH2-10ITZ:A TR

IC FLASH 128GBIT PAR 100TBGA

Micron Technology Inc.
3,770 -

RFQ

Tape & Reel (TR) - Last Time Buy Non-Volatile FLASH FLASH - NAND 128Gb (16G x 8) Parallel 100 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT28HL64GRBB6EBL-0GCT

MT28HL64GRBB6EBL-0GCT

NOR FLASH 1GX64 PLASTIC 3.3V

Micron Technology Inc.
3,334 -

RFQ

Bulk - Active - - - - - - - - - - -
MT28HL64GRBB6EBL-0GCT TR

MT28HL64GRBB6EBL-0GCT TR

IC FLASH NOR 1GX64 3.3V FLGA

Micron Technology Inc.
2,454 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - -
MT53D768M64D8NZ-046 WT:E

MT53D768M64D8NZ-046 WT:E

IC DRAM 48GBIT 2133MHZ 376WFBGA

Micron Technology Inc.
3,194 -

RFQ

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR4 48Gb (768M x 64) - 2.133 GHz - - 1.1V -30°C ~ 85°C (TC) Surface Mount
MT53D768M64D8NZ-046 WT:E TR

MT53D768M64D8NZ-046 WT:E TR

IC DRAM 48GBIT 2133MHZ 376WFBGA

Micron Technology Inc.
3,871 -

RFQ

Tape & Reel (TR) - Active Volatile DRAM SDRAM - Mobile LPDDR4 48Gb (768M x 64) - 2.133 GHz - - 1.1V -30°C ~ 85°C (TC) Surface Mount
MT40A4G8KVA-083H:G TR

MT40A4G8KVA-083H:G TR

IC DRAM 32GBIT PARALLEL 78FBGA

Micron Technology Inc.
2,958 -

RFQ

MT40A4G8KVA-083H:G TR

Ficha técnica

Tape & Reel (TR) - Not For New Designs Volatile DRAM SDRAM - DDR4 32Gb (4G x 8) Parallel 1.2 GHz - - 1.14V ~ 1.26V 0°C ~ 95°C (TC) Surface Mount
MT40A16G4WPF-062H:B

MT40A16G4WPF-062H:B

IC FLASH 64GBIT 1.6GHZ

Micron Technology Inc.
3,158 -

RFQ

Tray - Active Volatile DRAM SDRAM - DDR4 64Gb (16G x 4) - 1.6 GHz - - - 0°C ~ 95°C (TC) -
MT40A16G4WPF-062H:B TR

MT40A16G4WPF-062H:B TR

IC FLASH 64GBIT 1.6GHZ

Micron Technology Inc.
2,431 -

RFQ

Tape & Reel (TR) - Active Volatile DRAM SDRAM - DDR4 64Gb (16G x 4) - 1.6 GHz - - - 0°C ~ 95°C (TC) -
MT40A4G8KVA-083H:G

MT40A4G8KVA-083H:G

IC DRAM 32GBIT PARALLEL 78FBGA

Micron Technology Inc.
2,521 -

RFQ

MT40A4G8KVA-083H:G

Ficha técnica

Tray - Not For New Designs Volatile DRAM SDRAM - DDR4 32Gb (4G x 8) Parallel 1.2 GHz - - 1.14V ~ 1.26V 0°C ~ 95°C (TC) Surface Mount
MT29F8T08GULBEM4:B TR

MT29F8T08GULBEM4:B TR

QLC 8T 1TX8 LBGA 8DP

Micron Technology Inc.
2,388 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - -
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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