Memória

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MT54V512H18EF-10

MT54V512H18EF-10

IC SRAM 9MBIT PARALLEL 165FBGA

Micron Technology Inc.
147 -

RFQ

MT54V512H18EF-10

Ficha técnica

Bulk QDR™ Active Volatile SRAM SRAM - Quad Port, Synchronous 9Mb (512K x 18) Parallel 100 MHz - - 2.4V ~ 2.6V 0°C ~ 70°C (TA) Surface Mount
MT54V512H36EF-6

MT54V512H36EF-6

IC SRAM 18MBIT PARALLEL 165FBGA

Micron Technology Inc.
158 -

RFQ

MT54V512H36EF-6

Ficha técnica

Bulk QDR™ Active Volatile SRAM SRAM - Quad Port, Synchronous 18Mb (512K x 36) Parallel 167 MHz - - 2.4V ~ 2.6V 0°C ~ 70°C (TA) Surface Mount
MT53E384M32D2DS-053 WT:E

MT53E384M32D2DS-053 WT:E

IC DRAM 12GBIT 1.866GHZ 200WFBGA

Micron Technology Inc.
2,168 -

RFQ

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR4 12Gb (384M x 32) - 1.866 GHz - - 1.1V -30°C ~ 85°C (TC) Surface Mount
MT55L512Y36PF-10

MT55L512Y36PF-10

IC SRAM 18MBIT PARALLEL 165FBGA

Micron Technology Inc.
112 -

RFQ

MT55L512Y36PF-10

Ficha técnica

Bulk ZBT® Active Volatile SRAM SRAM - Asynchronous, ZBT 18Mb (512K x 36) Parallel 100 MHz - 5 ns 3.135V ~ 3.465V 0°C ~ 70°C (TA) Surface Mount
MT58L1MY18FT-8.5

MT58L1MY18FT-8.5

CACHE SRAM, 1MX18, 8.5NS PQFP100

Micron Technology Inc.
964 -

RFQ

MT58L1MY18FT-8.5

Ficha técnica

Bulk * Active - - - - - - - - - - -
MT58L512Y36PF-6

MT58L512Y36PF-6

IC SRAM 18MBIT PARALLEL 165FBGA

Micron Technology Inc.
121 -

RFQ

MT58L512Y36PF-6

Ficha técnica

Bulk SYNCBURST™ Active Volatile SRAM SRAM 18Mb (512K x 36) Parallel 166 MHz - 3.5 ns 3.135V ~ 3.465V 0°C ~ 70°C (TA) Surface Mount
MT57W1MH18BF-7.5

MT57W1MH18BF-7.5

DDR SRAM, 1MX18, 0.5NS PBGA165

Micron Technology Inc.
3,412 -

RFQ

MT57W1MH18BF-7.5

Ficha técnica

Bulk * Active - - - - - - - - - - -
MT57W1MH18BF-4

MT57W1MH18BF-4

DDR SRAM, 1MX18, 0.45NS PBGA165

Micron Technology Inc.
926 -

RFQ

MT57W1MH18BF-4

Ficha técnica

Bulk * Active - - - - - - - - - - -
MT54W512H36JF-6

MT54W512H36JF-6

IC SRAM 18MBIT PARALLEL 165FBGA

Micron Technology Inc.
753 -

RFQ

MT54W512H36JF-6

Ficha técnica

Bulk QDR™ Active Volatile SRAM SRAM - Quad Port, Synchronous 18Mb (512K x 36) Parallel 167 MHz - 6 ns 1.7V ~ 1.9V 0°C ~ 70°C (TA) Surface Mount
MT57W512H36BF-7.5

MT57W512H36BF-7.5

IC SRAM 18MBIT PARALLEL 165FBGA

Micron Technology Inc.
325 -

RFQ

MT57W512H36BF-7.5

Ficha técnica

Bulk - Active Volatile SRAM SRAM - DDR2 18Mb (512K x 36) Parallel 133 MHz - 7.5 ns 1.7V ~ 1.9V 0°C ~ 70°C (TA) Surface Mount
MT53E384M32D2DS-053 AIT:E

MT53E384M32D2DS-053 AIT:E

IC DRAM 12GBIT 1.866GHZ 200WFBGA

Micron Technology Inc.
2,424 -

RFQ

Tray Automotive, AEC-Q100 Active Volatile DRAM SDRAM - Mobile LPDDR4 12Gb (384M x 32) - 1.866 GHz - - 1.1V -40°C ~ 95°C (TC) Surface Mount
MT54W1MH18JF-7.5

MT54W1MH18JF-7.5

QDR SRAM, 1MX18, 0.5NS PBGA165

Micron Technology Inc.
2,100 -

RFQ

MT54W1MH18JF-7.5

Ficha técnica

Bulk * Active - - - - - - - - - - -
MT54W512H36BF-7.5

MT54W512H36BF-7.5

QDR SRAM, 512KX36, 0.5NS PBGA165

Micron Technology Inc.
170 -

RFQ

MT54W512H36BF-7.5

Ficha técnica

Bulk * Active - - - - - - - - - - -
MT54V512H18E1F-5

MT54V512H18E1F-5

QDR SRAM, 512KX18, CMOS

Micron Technology Inc.
2,100 -

RFQ

MT54V512H18E1F-5

Ficha técnica

Bulk * Active - - - - - - - - - - -
MT47H32M16HR-25E:G

MT47H32M16HR-25E:G

IC DRAM 512MBIT PARALLEL 84FBGA

Micron Technology Inc.
2,314 -

RFQ

MT47H32M16HR-25E:G

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - DDR2 512Mb (32M x 16) Parallel 400 MHz 15ns 400 ps 1.7V ~ 1.9V 0°C ~ 85°C (TC) Surface Mount
MT29F32G08AFABAWP:B

MT29F32G08AFABAWP:B

IC FLASH 32GBIT PARALLEL 48TSOP

Micron Technology Inc.
2,665 -

RFQ

Tray - Obsolete Non-Volatile FLASH FLASH - NAND 32Gb (4G x 8) Parallel - - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT47H32M16HR-3:F

MT47H32M16HR-3:F

IC DRAM 512MBIT PARALLEL 84FBGA

Micron Technology Inc.
3,493 -

RFQ

MT47H32M16HR-3:F

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - DDR2 512Mb (32M x 16) Parallel 333 MHz 15ns 450 ps 1.7V ~ 1.9V 0°C ~ 85°C (TC) Surface Mount
MT54V512H18EF-6C

MT54V512H18EF-6C

512KX18 2.5V VDD HSTL QDRB4 SRAM

Micron Technology Inc.
3,095 -

RFQ

MT54V512H18EF-6C

Ficha técnica

Bulk * Active - - - - - - - - - - -
MT57W1MH18JF-6

MT57W1MH18JF-6

IC SRAM 18MBIT PARALLEL 165FBGA

Micron Technology Inc.
3,865 -

RFQ

MT57W1MH18JF-6

Ficha técnica

Bulk - Active Volatile SRAM SRAM - DDR2 18Mb (1M x 18) Parallel 167 MHz - 6 ns 1.7V ~ 1.9V 0°C ~ 70°C (TA) Surface Mount
MT54W2MH8JF-4

MT54W2MH8JF-4

QDR SRAM, 2MX8, 0.45NS PBGA165

Micron Technology Inc.
2,384 -

RFQ

MT54W2MH8JF-4

Ficha técnica

Bulk * Active - - - - - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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