Memória

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
M30082040108X0IWAY

M30082040108X0IWAY

IC RAM 8MBIT 108MHZ 8DFN

Renesas Electronics America Inc
3,668 -

RFQ

M30082040108X0IWAY

Ficha técnica

Tray - Active Non-Volatile RAM MRAM (Magnetoresistive RAM) 8Mb (2M x 4) - 108 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C Surface Mount
M10082040108X0IWAY

M10082040108X0IWAY

IC RAM 8MBIT 108MHZ 8DFN

Renesas Electronics America Inc
3,057 -

RFQ

M10082040108X0IWAY

Ficha técnica

Tray - Active Non-Volatile RAM MRAM (Magnetoresistive RAM) 8Mb (2M x 4) - 108 MHz - - 1.71V ~ 2V -40°C ~ 85°C Surface Mount
71V321L35JG

71V321L35JG

IC SRAM 16KBIT PARALLEL 52PLCC

Renesas Electronics America Inc
2,379 -

RFQ

71V321L35JG

Ficha técnica

Tube - Active Volatile SRAM SRAM - Dual Port, Asynchronous 16Kb (2K x 8) Parallel - 35ns 35 ns 3V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
71V321L35JG8

71V321L35JG8

IC SRAM 16KBIT PARALLEL 52PLCC

Renesas Electronics America Inc
2,071 -

RFQ

71V321L35JG8

Ficha técnica

Tape & Reel (TR) - Active Volatile SRAM SRAM - Dual Port, Asynchronous 16Kb (2K x 8) Parallel - 35ns 35 ns 3V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
71T75602S166PFG8

71T75602S166PFG8

IC SRAM 18MBIT PARALLEL 100TQFP

Renesas Electronics America Inc
3,574 -

RFQ

71T75602S166PFG8

Ficha técnica

Tape & Reel (TR) - Active Volatile SRAM SRAM - Synchronous, SDR (ZBT) 18Mb (512K x 36) Parallel 166 MHz - 3.5 ns 2.375V ~ 2.625V 0°C ~ 70°C (TA) Surface Mount
71T75802S166PFG8

71T75802S166PFG8

IC SRAM 18MBIT PARALLEL 100TQFP

Renesas Electronics America Inc
2,671 -

RFQ

71T75802S166PFG8

Ficha técnica

Tape & Reel (TR) - Active Volatile SRAM SRAM - Synchronous, SDR (ZBT) 18Mb (1M x 18) Parallel 166 MHz - 3.5 ns 2.375V ~ 2.625V 0°C ~ 70°C (TA) Surface Mount
6116SA20TDB

6116SA20TDB

IC SRAM 16KBIT PARALLEL 24CDIP

Renesas Electronics America Inc
3,812 -

RFQ

6116SA20TDB

Ficha técnica

Tray - Active Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 20ns 20 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
6116SA25TDB

6116SA25TDB

IC SRAM 16KBIT PARALLEL 24CDIP

Renesas Electronics America Inc
3,739 -

RFQ

6116SA25TDB

Ficha técnica

Tray - Active Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 25ns 25 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
6116SA45TDB

6116SA45TDB

IC SRAM 16KBIT PARALLEL 24CDIP

Renesas Electronics America Inc
3,261 -

RFQ

6116SA45TDB

Ficha técnica

Tray - Last Time Buy Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 45ns 45 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
6116SA55TDB

6116SA55TDB

IC SRAM 16KBIT PARALLEL 24CDIP

Renesas Electronics America Inc
3,087 -

RFQ

6116SA55TDB

Ficha técnica

Tube - Active Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 55ns 55 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
6116LA120DB

6116LA120DB

IC SRAM 16KBIT PARALLEL 24CDIP

Renesas Electronics America Inc
3,651 -

RFQ

6116LA120DB

Ficha técnica

Tray - Active Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 120ns 120 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
6116LA120TDB

6116LA120TDB

IC SRAM 16KBIT PARALLEL 24CDIP

Renesas Electronics America Inc
2,995 -

RFQ

6116LA120TDB

Ficha técnica

Tray - Active Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 120ns 120 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
6116LA150DB

6116LA150DB

IC SRAM 16KBIT PARALLEL 24CDIP

Renesas Electronics America Inc
2,022 -

RFQ

6116LA150DB

Ficha técnica

Tray - Last Time Buy Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 150ns 150 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
6116LA150TDB

6116LA150TDB

IC SRAM 16KBIT PARALLEL 24CDIP

Renesas Electronics America Inc
3,123 -

RFQ

6116LA150TDB

Ficha técnica

Tray - Active Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 150ns 150 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
6116LA20TDB

6116LA20TDB

IC SRAM 16KBIT PARALLEL 24CDIP

Renesas Electronics America Inc
3,551 -

RFQ

6116LA20TDB

Ficha técnica

Tray - Last Time Buy Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 20ns 20 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
6116LA25TDB

6116LA25TDB

IC SRAM 16KBIT PARALLEL 24CDIP

Renesas Electronics America Inc
2,386 -

RFQ

6116LA25TDB

Ficha técnica

Tray - Last Time Buy Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 25ns 25 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
6116LA35TDB

6116LA35TDB

IC SRAM 16KBIT PARALLEL 24CDIP

Renesas Electronics America Inc
3,278 -

RFQ

6116LA35TDB

Ficha técnica

Tray - Last Time Buy Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 35ns 35 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
6116LA45DB

6116LA45DB

IC SRAM 16KBIT PARALLEL 24CDIP

Renesas Electronics America Inc
3,231 -

RFQ

6116LA45DB

Ficha técnica

Tray - Last Time Buy Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 45ns 45 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
6116LA45TDB

6116LA45TDB

IC SRAM 16KBIT PARALLEL 24CDIP

Renesas Electronics America Inc
2,321 -

RFQ

6116LA45TDB

Ficha técnica

Tray - Last Time Buy Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 45ns 45 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
6116LA55DB

6116LA55DB

IC SRAM 16KBIT PARALLEL 24CDIP

Renesas Electronics America Inc
3,914 -

RFQ

6116LA55DB

Ficha técnica

Tray - Last Time Buy Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 55ns 55 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
Total 7160 Record«Prev1... 274275276277278279280281...358Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário