Optoisoladores - Transistor, saída fotovoltaica

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus NumberofChannels Voltage-Isolation CurrentTransferRatio(Min) CurrentTransferRatio(Max) TurnOn/TurnOffTime(Typ) Rise/FallTime(Typ) InputType OutputType Voltage-Output(Max) Current-Output/Channel Voltage-Forward(Vf)(Typ) Current-DCForward(If)(Max) VceSaturation(Max) OperatingTemperature MountingType
TCDT1122

TCDT1122

OPTOISOLATOR 5KV TRANS 6DIP

Vishay Semiconductor Opto Division
2,487 -

RFQ

TCDT1122

Ficha técnica

Tube - Active 1 5000Vrms 63% @ 10mA 125% @ 10mA - - DC Transistor 70V 50mA 1.25V 60 mA 300mV -55°C ~ 100°C Through Hole
PC817X3NSZ1B

PC817X3NSZ1B

OPTOISOLATOR 5KV TRANS DIP

SHARP/Socle Technology
3,882 -

RFQ

Tube - Active 1 - - - - 4µs, 3µs DC Transistor 80V 50mA 1.2V 50 mA 200mV -30°C ~ 100°C Through Hole
HMHA2801AV

HMHA2801AV

OPTOISO 3.75KV TRANS 4-MINI-FLAT

onsemi
3,950 -

RFQ

HMHA2801AV

Ficha técnica

Box - Active 1 3750Vrms 80% @ 5mA 160% @ 5mA - 3µs, 3µs DC Transistor 80V 50mA 1.3V (Max) 50 mA 300mV -55°C ~ 100°C Surface Mount
4N25-560E

4N25-560E

OPTOISO 2.5KV TRANS W/BASE 6SMD

Broadcom Limited
2,101 -

RFQ

4N25-560E

Ficha técnica

Tape & Reel (TR) - Active 1 2500Vrms 20% @ 10mA - - 3µs, 3µs DC Transistor with Base 30V 100mA 1.2V 80 mA 500mV -55°C ~ 100°C Surface Mount
4N35-560E

4N35-560E

OPTOISO 3.55KV TRANS W/BASE 6SMD

Broadcom Limited
2,657 -

RFQ

4N35-560E

Ficha técnica

Tape & Reel (TR) - Active 1 3550Vrms 100% @ 10mA - - 3µs, 3µs DC Transistor with Base 30V 100mA 1.2V 60 mA 300mV -55°C ~ 100°C Surface Mount
CNY17-1-560E

CNY17-1-560E

OPTOISO 5KV TRANS W/BASE 6SMD

Broadcom Limited
2,981 -

RFQ

CNY17-1-560E

Ficha técnica

Tape & Reel (TR) - Active 1 5000Vrms 40% @ 10mA 80% @ 10mA - 5µs, 5µs DC Transistor with Base 70V 150mA 1.4V 60 mA 300mV -55°C ~ 100°C Surface Mount
CNY17-2-560E

CNY17-2-560E

OPTOISO 5KV TRANS W/BASE 6SMD

Broadcom Limited
2,934 -

RFQ

CNY17-2-560E

Ficha técnica

Tape & Reel (TR) - Active 1 5000Vrms 63% @ 10mA 125% @ 10mA - 5µs, 5µs DC Transistor with Base 70V 150mA 1.4V 60 mA 300mV -55°C ~ 100°C Surface Mount
CNY17-4-560E

CNY17-4-560E

OPTOISO 5KV TRANS W/BASE 6SMD

Broadcom Limited
3,726 -

RFQ

CNY17-4-560E

Ficha técnica

Tape & Reel (TR) - Active 1 5000Vrms 160% @ 10mA 320% @ 10mA - 5µs, 5µs DC Transistor with Base 70V 150mA 1.4V 60 mA 300mV -55°C ~ 100°C Surface Mount
CNY17-3-560E

CNY17-3-560E

OPTOISO 5KV TRANS W/BASE 6SMD

Broadcom Limited
3,828 -

RFQ

CNY17-3-560E

Ficha técnica

Tape & Reel (TR) - Active 1 5000Vrms 100% @ 10mA 200% @ 10mA - 5µs, 5µs DC Transistor with Base 70V 150mA 1.4V 60 mA 300mV -55°C ~ 100°C Surface Mount
4N35-W60E

4N35-W60E

OPTOISO 3.55KV TRANS W/BASE 6DIP

Broadcom Limited
3,963 -

RFQ

4N35-W60E

Ficha técnica

Tube - Active 1 3550Vrms 100% @ 10mA - - 3µs, 3µs DC Transistor with Base 30V 100mA 1.2V 60 mA 300mV -55°C ~ 100°C Through Hole
4N25-360E

4N25-360E

OPTOISO 2.5KV TRANS W/BASE 6SMD

Broadcom Limited
2,332 -

RFQ

4N25-360E

Ficha técnica

Tube - Active 1 2500Vrms 20% @ 10mA - - 3µs, 3µs DC Transistor with Base 30V 100mA 1.2V 80 mA 500mV -55°C ~ 100°C Surface Mount
4N25-W60E

4N25-W60E

OPTOISO 2.5KV TRANS W/BASE 6DIP

Broadcom Limited
3,769 -

RFQ

4N25-W60E

Ficha técnica

Tube - Active 1 2500Vrms 20% @ 10mA - - 3µs, 3µs DC Transistor with Base 30V 100mA 1.2V 80 mA 500mV -55°C ~ 100°C Through Hole
4N35-360E

4N35-360E

OPTOISO 3.55KV TRANS W/BASE 6SMD

Broadcom Limited
3,851 -

RFQ

4N35-360E

Ficha técnica

Tube - Active 1 3550Vrms 100% @ 10mA - - 3µs, 3µs DC Transistor with Base 30V 100mA 1.2V 60 mA 300mV -55°C ~ 100°C Surface Mount
CNY17-3-360E

CNY17-3-360E

OPTOISO 5KV TRANS W/BASE 6SMD

Broadcom Limited
3,947 -

RFQ

CNY17-3-360E

Ficha técnica

Tube - Active 1 5000Vrms 100% @ 10mA 200% @ 10mA - 5µs, 5µs DC Transistor with Base 70V 150mA 1.4V 60 mA 300mV -55°C ~ 100°C Surface Mount
CNY17-3-W60E

CNY17-3-W60E

OPTOISO 5KV TRANS W/BASE 6DIP

Broadcom Limited
2,183 -

RFQ

CNY17-3-W60E

Ficha técnica

Tube - Active 1 5000Vrms 100% @ 10mA 200% @ 10mA - 5µs, 5µs DC Transistor with Base 70V 150mA 1.4V 60 mA 300mV -55°C ~ 100°C Through Hole
CNY17-2-W60E

CNY17-2-W60E

OPTOISO 5KV TRANS W/BASE 6DIP

Broadcom Limited
3,074 -

RFQ

CNY17-2-W60E

Ficha técnica

Tube - Active 1 5000Vrms 63% @ 10mA 125% @ 10mA - 5µs, 5µs DC Transistor with Base 70V 150mA 1.4V 60 mA 300mV -55°C ~ 100°C Through Hole
CNY17-4-360E

CNY17-4-360E

OPTOISO 5KV TRANS W/BASE 6SMD

Broadcom Limited
2,820 -

RFQ

CNY17-4-360E

Ficha técnica

Tube - Active 1 5000Vrms 160% @ 10mA 320% @ 10mA - 5µs, 5µs DC Transistor with Base 70V 150mA 1.4V 60 mA 300mV -55°C ~ 100°C Surface Mount
CNY17-4-W60E

CNY17-4-W60E

OPTOISO 5KV TRANS W/BASE 6DIP

Broadcom Limited
2,877 -

RFQ

CNY17-4-W60E

Ficha técnica

Tube - Active 1 5000Vrms 160% @ 10mA 320% @ 10mA - 5µs, 5µs DC Transistor with Base 70V 150mA 1.4V 60 mA 300mV -55°C ~ 100°C Through Hole
CNY17-1-W60E

CNY17-1-W60E

OPTOISO 5KV TRANS W/BASE 6DIP

Broadcom Limited
3,927 -

RFQ

CNY17-1-W60E

Ficha técnica

Tube - Active 1 5000Vrms 40% @ 10mA 80% @ 10mA - 5µs, 5µs DC Transistor with Base 70V 150mA 1.4V 60 mA 300mV -55°C ~ 100°C Through Hole
CNY17-2-360E

CNY17-2-360E

OPTOISO 5KV TRANS W/BASE 6SMD

Broadcom Limited
3,005 -

RFQ

CNY17-2-360E

Ficha técnica

Tube - Active 1 5000Vrms 63% @ 10mA 125% @ 10mA - 5µs, 5µs DC Transistor with Base 70V 150mA 1.4V 60 mA 300mV -55°C ~ 100°C Surface Mount
Total 11011 Record«Prev1... 191192193194195196197198...551Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário