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Optoisoladores - Transistor, saída fotovoltaica
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | NumberofChannels | Voltage-Isolation | CurrentTransferRatio(Min) | CurrentTransferRatio(Max) | TurnOn/TurnOffTime(Typ) | Rise/FallTime(Typ) | InputType | OutputType | Voltage-Output(Max) | Current-Output/Channel | Voltage-Forward(Vf)(Typ) | Current-DCForward(If)(Max) | VceSaturation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PS2801C-1-V-F3-L-AOPTOISOLATOR 2.5KV TRANS 4SOIC Renesas Electronics America Inc |
2,412 | - |
RFQ |
Tape & Reel (TR) | - | Not For New Designs | 1 | 2500Vrms | 100% @ 5mA | 300% @ 5mA | 10µs, 7µs | 5µs, 7µs | DC | Transistor | 80V | 30mA | 1.2V | 30 mA | 300mV | -55°C ~ 100°C | Surface Mount | |
|
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PS2801C-1-V-F3-P-AOPTOISOLATOR 2.5KV TRANS 4SOIC Renesas Electronics America Inc |
2,898 | - |
RFQ |
Tape & Reel (TR) | - | Not For New Designs | 1 | 2500Vrms | 150% @ 5mA | 300% @ 5mA | 10µs, 7µs | 5µs, 7µs | DC | Transistor | 80V | 30mA | 1.2V | 30 mA | 300mV | -55°C ~ 100°C | Surface Mount | |
|
|
PS2801A-1-F3-AOPTOISOLATOR 2.5KV TRANS 4SOIC Renesas Electronics America Inc |
3,255 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | NEPOC | Not For New Designs | 1 | 2500Vrms | 50% @ 5mA | 400% @ 5mA | - | 5µs, 7µs | DC | Transistor | 70V | 30mA | 1.2V | 30 mA | 300mV | -55°C ~ 100°C | Surface Mount |
|
CNY17-2M-VOPTOISO 5KV TRANS W/BASE 6DIP Everlight Electronics Co Ltd |
3,582 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 63% @ 10mA | 125% @ 10mA | 10µs, 9µs | 6µs, 8µs | DC | Transistor with Base | 80V | - | 1.65V (Max) | 60 mA | 300mV | -55°C ~ 110°C | Through Hole |
|
4N37VMOPTOISO 4.17KV TRANS W/BASE 6DIP onsemi |
2,144 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | 1 | 4170Vrms | 100% @ 10mA | - | 2µs, 2µs | - | DC | Transistor with Base | 30V | - | 1.18V | 60 mA | 300mV | -40°C ~ 100°C | Through Hole |
|
|
TLP628M(GB-TP1,ETR COUPLER; DIP4; ROHS; GULL WIN Toshiba Semiconductor and Storage |
3,974 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 1 | 5000Vrms | 100% @ 5mA | 600% @ 5mA | 10µs, 10µs | 5.5µs, 10µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Surface Mount |
|
|
TLP628M(TP1,ETR COUPLER; DIP4; ROHS; GULL WIN Toshiba Semiconductor and Storage |
3,436 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 1 | 5000Vrms | 50% @ 5mA | 600% @ 5mA | 10µs, 10µs | 5.5µs, 10µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Surface Mount |
|
|
TLP628M(LF5,ETR COUPLER; DIP4; ROHS; GULL WIN Toshiba Semiconductor and Storage |
3,258 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 50% @ 5mA | 600% @ 5mA | 10µs, 10µs | 5.5µs, 10µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Surface Mount |
|
|
TLP628M(TP5,ETR COUPLER; DIP4; ROHS; GULL WIN Toshiba Semiconductor and Storage |
3,983 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 1 | 5000Vrms | 50% @ 5mA | 600% @ 5mA | 10µs, 10µs | 5.5µs, 10µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Surface Mount |
|
|
TLP628M(GB-TP5,ETR COUPLER; DIP4; ROHS; GULL WIN Toshiba Semiconductor and Storage |
2,143 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 1 | 5000Vrms | 100% @ 5mA | 600% @ 5mA | 10µs, 10µs | 5.5µs, 10µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Surface Mount |
|
PC3HU72YIP1BPHOTOCOUPLER SHARP/Socle Technology |
2,765 | - |
RFQ |
Bulk | - | Active | 1 | 3750Vrms | 50% @ 5mA | 400% @ 5mA | - | 4µs, 3µs | DC | Transistor | 80V | 50mA | 1.2V | 50 mA | 200mV | -55°C ~ 110°C | Surface Mount | |
|
|
CNY17F4TVMOPTOISO 4.17KV TRANS 6DIP onsemi |
3,395 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 4170Vrms | 160% @ 10mA | 320% @ 10mA | 2µs, 3µs | 4µs, 3.5µs (Max) | DC | Transistor | 70V | 50mA | 1.35V | 60 mA | 400mV | -40°C ~ 100°C | Through Hole |
|
|
CNY117F-1X001OPTOISOLTR 5KV TRANSISTOR 6-DIP Vishay Semiconductor Opto Division |
2,682 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 40% @ 10mA | 80% @ 10mA | 3µs, 2.3µs | 2µs, 2µs | DC | Transistor | 70V | 50mA | 1.39V | 60 mA | 400mV | -55°C ~ 110°C | Through Hole |
|
CNY117F-1X006OPTOISOLTR 5KV TRANSISTOR 6-DIP Vishay Semiconductor Opto Division |
3,222 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 40% @ 10mA | 80% @ 10mA | 3µs, 2.3µs | 2µs, 2µs | DC | Transistor | 70V | 50mA | 1.39V | 60 mA | 400mV | -55°C ~ 110°C | Through Hole |
|
|
CNY117F-3X006OPTOISOLTR 5KV TRANSISTOR 6-DIP Vishay Semiconductor Opto Division |
2,067 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 100% @ 10mA | 200% @ 10mA | 3µs, 2.3µs | 2µs, 2µs | DC | Transistor | 70V | 50mA | 1.39V | 60 mA | 400mV | -55°C ~ 110°C | Through Hole |
|
|
CNY117F-4X001OPTOISOLTR 5KV TRANSISTOR 6-DIP Vishay Semiconductor Opto Division |
2,666 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 160% @ 10mA | 320% @ 10mA | 3µs, 2.3µs | 2µs, 2µs | DC | Transistor | 70V | 50mA | 1.39V | 60 mA | 400mV | -55°C ~ 110°C | Through Hole |
|
|
CNY117-3X001OPTOISO 5KV TRANS W/BASE 6DIP Vishay Semiconductor Opto Division |
3,132 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 100% @ 10mA | 200% @ 10mA | 3µs, 2.3µs | 2µs, 2µs | DC | Transistor with Base | 70V | 50mA | 1.39V | 60 mA | 400mV | -55°C ~ 110°C | Through Hole |
|
|
CNY117-3X006OPTOISO 5KV TRANS W/BASE 6DIP Vishay Semiconductor Opto Division |
3,661 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 100% @ 10mA | 200% @ 10mA | 3µs, 2.3µs | 2µs, 2µs | DC | Transistor with Base | 70V | 50mA | 1.39V | 60 mA | 400mV | -55°C ~ 110°C | Through Hole |
|
|
CNY117-4X001OPTOISO 5KV TRANS W/BASE 6DIP Vishay Semiconductor Opto Division |
2,910 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 160% @ 10mA | 320% @ 10mA | 3µs, 2.3µs | 2µs, 2µs | DC | Transistor with Base | 70V | 50mA | 1.39V | 60 mA | 400mV | -55°C ~ 110°C | Through Hole |
|
|
CNY117-4X006OPTOISO 5KV TRANS W/BASE 6DIP Vishay Semiconductor Opto Division |
3,567 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 160% @ 10mA | 320% @ 10mA | 3µs, 2.3µs | 2µs, 2µs | DC | Transistor with Base | 70V | 50mA | 1.39V | 60 mA | 400mV | -55°C ~ 110°C | Through Hole |
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