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Optoisoladores - Transistor, saída fotovoltaica
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | NumberofChannels | Voltage-Isolation | CurrentTransferRatio(Min) | CurrentTransferRatio(Max) | TurnOn/TurnOffTime(Typ) | Rise/FallTime(Typ) | InputType | OutputType | Voltage-Output(Max) | Current-Output/Channel | Voltage-Forward(Vf)(Typ) | Current-DCForward(If)(Max) | VceSaturation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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LDA101SOPTOISO 3.75KV TRANS W/BASE 6SMD IXYS Integrated Circuits Division |
2,736 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 3750Vrms | 33% @ 1mA | - | 7µs, 20µs | - | DC | Transistor with Base | 30V | - | 1.2V | 1 mA | 500mV | -40°C ~ 85°C | Surface Mount |
|
LDA102OPTOISO 3.75KV TRANS W/BASE 6DIP IXYS Integrated Circuits Division |
3,624 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 3750Vrms | 50% @ 1mA | - | 7µs, 20µs | - | DC | Transistor with Base | 30V | - | 1.2V | 1 mA | 500mV | -40°C ~ 85°C | Through Hole |
|
|
LDA102SOPTOISO 3.75KV TRANS W/BASE 6SMD IXYS Integrated Circuits Division |
3,912 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 3750Vrms | 50% @ 1mA | - | 7µs, 20µs | - | DC | Transistor with Base | 30V | - | 1.2V | 1 mA | 500mV | -40°C ~ 85°C | Surface Mount |
|
|
PS2565L-1Y-V-F3-AOPTOCOUPLER 4-PIN DIP Renesas Electronics America Inc |
2,687 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 1 | 5000Vrms | 80% @ 5mA | 400% @ 5mA | - | 3µs, 5µs | AC, DC | Transistor | 80V | 50mA | 1.17V | 80 mA | 300mV | -55°C ~ 100°C | Surface Mount |
|
6N139-560EOPTOISO 3.75KV DARL W/BASE 8SMD Broadcom Limited |
3,701 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 1 | 3750Vrms | 500% @ 1.6mA | 2600% @ 1.6mA | 200ns, 2µs | - | DC | Darlington with Base | 18V | 60mA | 1.4V | 20 mA | - | -40°C ~ 85°C | Surface Mount |
|
|
6N139-520EOPTOISO 5KV DARL W/BASE 8SMD Broadcom Limited |
2,446 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 1 | 5000Vrms | 500% @ 1.6mA | 2600% @ 1.6mA | 200ns, 2µs | - | DC | Darlington with Base | 18V | 60mA | 1.4V | 20 mA | - | -40°C ~ 85°C | Surface Mount |
|
|
6N139-320EOPTOISO 5KV DARL W/BASE 8SMD Broadcom Limited |
3,123 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 500% @ 1.6mA | 2600% @ 1.6mA | 200ns, 2µs | - | DC | Darlington with Base | 18V | 60mA | 1.4V | 20 mA | - | -40°C ~ 85°C | Surface Mount |
|
LTV-847MOPTOISOLTR 5KV 4CH TRANS 16-DIP Lite-On Inc. |
2,279 | - |
RFQ |
Ficha técnica |
Tube | LTV-8x7 | Active | 4 | 5000Vrms | 50% @ 5mA | 600% @ 5mA | - | 4µs, 3µs | DC | Transistor | 35V | 50mA | 1.2V | 50 mA | 200mV | -30°C ~ 110°C | Through Hole |
|
|
LTV-8241S-TA1OPTOISO 5KV 2CH DARLINGTON 8-SMD Lite-On Inc. |
2,026 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 2 | 5000Vrms | 600% @ 1mA | 7500% @ 1mA | - | 60µs, 53µs | AC, DC | Darlington | 35V | 80mA | 1.2V | 50 mA | 1V | -30°C ~ 100°C | Surface Mount |
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TLP109(V4,EOPTOISO 3.75KV TRANS 6-SO 5 LEAD Toshiba Semiconductor and Storage |
3,291 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 3750Vrms | 20% @ 16mA | - | 800ns, 800ns (Max) | - | DC | Transistor | 20V | 8mA | 1.64V | 20 mA | - | -55°C ~ 125°C | Surface Mount |
|
6N135SMOPTOISO 5KV TRANS W/BASE 8SMD onsemi |
2,380 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 7% @ 16mA | 50% @ 16mA | 230ns, 450ns | - | DC | Transistor with Base | 20V | 8mA | 1.45V | 25 mA | - | -40°C ~ 100°C | Surface Mount |
|
6N136-020EOPTOISO 5KV TRANS W/BASE 8DIP Broadcom Limited |
2,024 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 19% @ 16mA | 50% @ 16mA | 200ns, 600ns | - | DC | Transistor with Base | 20V | 8mA | 1.5V | 25 mA | - | -55°C ~ 100°C | Through Hole |
|
|
6N136-060EOPTOISO 3.75KV TRANS W/BASE 8DIP Broadcom Limited |
2,983 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 3750Vrms | 19% @ 16mA | 50% @ 16mA | 200ns, 600ns | - | DC | Transistor with Base | 20V | 8mA | 1.5V | 25 mA | - | -55°C ~ 100°C | Through Hole |
|
|
6N136-500EOPTOISO 3.75KV TRANS W/BASE 8SMD Broadcom Limited |
2,842 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 | 3750Vrms | 19% @ 16mA | 50% @ 16mA | 200ns, 600ns | - | DC | Transistor with Base | 20V | 8mA | 1.5V | 25 mA | - | -55°C ~ 100°C | Surface Mount |
|
|
6N135-500EOPTOISO 3.75KV TRANS W/BASE 8SMD Broadcom Limited |
3,259 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 | 3750Vrms | 7% @ 16mA | 50% @ 16mA | 200ns, 1.3µs | - | DC | Transistor with Base | 20V | 8mA | 1.5V | 25 mA | - | -55°C ~ 100°C | Surface Mount |
|
MCT5211TVMOPTOISO 4.17KV TRANS W/BASE 6DIP onsemi |
3,771 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | 1 | 4170Vrms | 150% @ 1.6mA | - | 14µs, 2.5µs | - | DC | Transistor with Base | 30V | 150mA | 1.25V | 50 mA | 400mV | -40°C ~ 100°C | Through Hole |
|
TLP3905(TPL,EPHOTORVOLTAIC; 3.75KV BV; SO6; 1 Toshiba Semiconductor and Storage |
3,076 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 1 | 3750Vrms | - | - | 300µs, 1ms | - | DC | Photovoltaic | 7V | 30µA (Typ) | 1.65V | 30 mA | - | -40°C ~ 125°C | Surface Mount |
|
|
TLP3905(TPR,EPHOTORVOLTAIC; 3.75KV BV; SO6; 1 Toshiba Semiconductor and Storage |
2,069 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 1 | 3750Vrms | - | - | 300µs, 1ms | - | DC | Photovoltaic | 7V | 30µA (Typ) | 1.65V | 30 mA | - | -40°C ~ 125°C | Surface Mount |
|
|
PS2761B-1-V-AOPTOISOLATOR 3.75KV TRANS 4SMD Renesas Electronics America Inc |
3,116 | - |
RFQ |
Ficha técnica |
Strip | NEPOC | Not For New Designs | 1 | 3750Vrms | 50% @ 5mA | 400% @ 5mA | - | 4µs, 5µs | DC | Transistor | 70V | 40mA | 1.1V | 25 mA | 300mV | -55°C ~ 110°C | Surface Mount |
|
|
PS2561DL1-1Y-H-AOPTOISOLATOR 5KV TRANS 4DIP Renesas Electronics America Inc |
100 | - |
RFQ |
Ficha técnica |
Tube | NEPOC | Active | 1 | 5000Vrms | 80% @ 5mA | 160% @ 5mA | - | 3µs, 5µs | DC | Transistor | 80V | 50mA | 1.2V | 40 mA | 300mV | -55°C ~ 110°C | Through Hole |
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