Optoisoladores - Transistor, saída fotovoltaica

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus NumberofChannels Voltage-Isolation CurrentTransferRatio(Min) CurrentTransferRatio(Max) TurnOn/TurnOffTime(Typ) Rise/FallTime(Typ) InputType OutputType Voltage-Output(Max) Current-Output/Channel Voltage-Forward(Vf)(Typ) Current-DCForward(If)(Max) VceSaturation(Max) OperatingTemperature MountingType
LTV-847S-TA1

LTV-847S-TA1

OPTOISOLTR 5KV 4CH TRANS 16-SMD

Lite-On Inc.
2,278 -

RFQ

LTV-847S-TA1

Ficha técnica

Tape & Reel (TR) LTV-8x7 Obsolete 4 5000Vrms 50% @ 5mA 600% @ 5mA - 4µs, 3µs DC Transistor 35V 50mA 1.2V 50 mA 200mV -30°C ~ 110°C Surface Mount
H11A5

H11A5

OPTOISO 5KV TRANS W/BASE 6DIP

Lite-On Inc.
3,904 -

RFQ

H11A5

Ficha técnica

Tube H11AX Obsolete 1 5000Vrms 30% @ 10mA - - 2.8µs, 4.5µs DC Transistor with Base 30V 150mA 1.2V 60 mA 400mV -55°C ~ 100°C Through Hole
4N32S

4N32S

OPTOISO 5.3KV DARL W/BASE 6SMD

onsemi
2,688 -

RFQ

4N32S

Ficha técnica

Tube - Obsolete 1 5300Vrms 500% @ 10mA - 5µs, 100µs (Max) - DC Darlington with Base 30V 150mA 1.2V 80 mA 1V -55°C ~ 100°C Surface Mount
4N35S

4N35S

OPTOISO 5.3KV TRANS W/BASE 6SMD

onsemi
3,726 -

RFQ

4N35S

Ficha técnica

Tube - Obsolete 1 5300Vrms 100% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 300mV -55°C ~ 100°C Surface Mount
4N35300

4N35300

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,565 -

RFQ

4N35300

Ficha técnica

Tube - Obsolete 1 5300Vrms 100% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 300mV -55°C ~ 100°C Through Hole
CNY171

CNY171

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,648 -

RFQ

CNY171

Ficha técnica

Tube - Obsolete 1 5300Vrms 40% @ 10mA 80% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor with Base 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Through Hole
CNY17F1

CNY17F1

OPTOISOLATOR 5.3KV TRANS 6-DIP

onsemi
2,543 -

RFQ

CNY17F1

Ficha técnica

Tube - Obsolete 1 5300Vrms 40% @ 10mA 80% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Through Hole
CNY17F2

CNY17F2

OPTOISOLATOR 5.3KV TRANS 6-DIP

onsemi
3,773 -

RFQ

CNY17F2

Ficha técnica

Tube - Obsolete 1 5300Vrms 63% @ 10mA 125% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Through Hole
CNY17F3

CNY17F3

OPTOISOLATOR 5.3KV TRANS 6-DIP

onsemi
3,237 -

RFQ

CNY17F3

Ficha técnica

Tube - Obsolete 1 5300Vrms 100% @ 10mA 200% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor 70V 50mA 1.35V 100 mA 300mV -55°C ~ 100°C Through Hole
H11A3

H11A3

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
2,867 -

RFQ

H11A3

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 400mV -55°C ~ 100°C Through Hole
H11B255

H11B255

OPTOISO 5.3KV DARL W/BASE 6DIP

onsemi
2,623 -

RFQ

H11B255

Ficha técnica

Tube - Obsolete 1 5300Vrms 100% @ 10mA - 25µs, 18µs - DC Darlington with Base 55V - 1.2V 100 mA 1V -55°C ~ 100°C Through Hole
H11G1S

H11G1S

OPTOISO 5.3KV DARL W/BASE 6SMD

onsemi
2,515 -

RFQ

H11G1S

Ficha técnica

Tube - Obsolete 1 5300Vrms 1000% @ 10mA - 5µs, 100µs - DC Darlington with Base 100V - 1.3V 60 mA 1V -55°C ~ 100°C Surface Mount
H24A1

H24A1

OPTOCOUPLER TRANS-OUT UL 4-DIP

onsemi
2,703 -

RFQ

H24A1

Ficha técnica

Tube - Obsolete 1 5300Vrms - - - - DC Darlington 30V - - 60 mA 400mV - Through Hole
MCT2M

MCT2M

OPTOISO 7.5KV TRANS W/BASE 6DIP

onsemi
3,972 -

RFQ

MCT2M

Ficha técnica

Tube - Obsolete 1 7500Vpk 20% @ 10mA - 2µs, 2µs 2µs, 1.5µs DC Transistor with Base 30V 50mA 1.25V 60 mA 400mV -40°C ~ 100°C Through Hole
MOC8100M

MOC8100M

OPTOISO 7.5KV TRANS W/BASE 6DIP

onsemi
3,750 -

RFQ

MOC8100M

Ficha técnica

Tube - Obsolete 1 7500Vpk 30% @ 1mA - 20µs, 20µs (Max) 2µs, 2µs DC Transistor with Base 30V - 1.2V 60 mA 500mV -55°C ~ 100°C Through Hole
MOC8106

MOC8106

OPTOISOLATOR 5.3KV TRANS 6-DIP

onsemi
2,836 -

RFQ

MOC8106

Ficha técnica

Tube - Obsolete 1 5300Vrms 50% @ 10mA 150% @ 10mA 2µs, 3µs 1µs, 2µs DC Transistor 70V 50mA 1.15V 100 mA 400mV -55°C ~ 100°C Through Hole
MOC8111

MOC8111

OPTOISOLATOR 5.3KV TRANS 6-DIP

onsemi
2,930 -

RFQ

MOC8111

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 3µs, 18µs 2µs, 11µs DC Transistor 70V - 1.15V 90 mA 400mV -55°C ~ 100°C Through Hole
MOC8112

MOC8112

OPTOISOLATOR 5.3KV TRANS 6-DIP

onsemi
2,143 -

RFQ

MOC8112

Ficha técnica

Tube - Obsolete 1 5300Vrms 50% @ 10mA - 4.2µs, 23µs 3µs, 14µs DC Transistor 70V - 1.15V 90 mA 400mV -55°C ~ 100°C Through Hole
MOC8113

MOC8113

OPTOISOLATOR 5.3KV TRANS 6-DIP

onsemi
3,925 -

RFQ

MOC8113

Ficha técnica

Tube - Obsolete 1 5300Vrms 100% @ 10mA - 4.2µs, 23µs 3µs, 14µs DC Transistor 70V - 1.15V 90 mA 400mV -55°C ~ 100°C Through Hole
4N25300

4N25300

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,194 -

RFQ

4N25300

Ficha técnica

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 100 mA 500mV -55°C ~ 100°C Through Hole
Total 11011 Record«Prev1... 303304305306307308309310...551Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário