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PMIC - Drivers de porta
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MCP14E7-E/PIC GATE DRVR LOW-SIDE 8DIP Microchip Technology |
3,798 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Non-Inverting | - | 12ns, 15ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR2106SPBFIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
2,832 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
NCD57001FDWR2GISOLATED HIGH CURRENT AND HIGH E onsemi |
3,439 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q100 | Active | Half-Bridge | Single | 1 | IGBT | 24V | - | 7.8A, 7.1A | Inverting, Non-Inverting | - | 10ns, 15ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
|
IRS2181SPBFIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
285 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 1.9A, 2.3A | Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
TLE92108232QXXUMA1IC MOSFET DRIVER ADAPTIVE Infineon Technologies |
2,701 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | MOTIX™ | Active | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 6V ~ 28V | - | 100mA, 100mA | Non-Inverting | 950 V | - | - | Surface Mount |
|
IRS2890DSPBFIC GATE DRVR HALF-BRIDGE 14SOIC Infineon Technologies |
2,279 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 220mA, 480mA | Non-Inverting | 600 V | 85ns, 30ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
L6491DIC GATE DRVR HALF-BRIDGE 14SO STMicroelectronics |
3,188 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 1.45V, 2V | 4A, 4A | Non-Inverting | 600 V | 15ns, 15ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
MAX8552EUB+IC GATE DRVR HALF-BRIDGE 10UMAX Analog Devices Inc./Maxim Integrated |
3,626 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 6.5V | 0.8V, 2.5V | - | Non-Inverting | - | 14ns, 9ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR21094SPBFIC GATE DRVR HALF-BRIDGE 14SOIC Infineon Technologies |
3,839 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IRS21064SPBFIC GATE DRVR HI/LOW SIDE 14SOIC Infineon Technologies |
3,627 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600 V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
TC4451VMFIC GATE DRVR LOW-SIDE 8DFN Microchip Technology |
2,621 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 13A, 13A | Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
TDA21472AUMA1IC GATE DRVR C_IFX POWERSTAGE Infineon Technologies |
2,222 | - |
RFQ |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | |
|
ISL78420AVEZ-T7AIC GATE DRVR HALF-BRIDG 14HTSSOP Renesas Electronics America Inc |
3,249 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q100 | Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 1.8V, 4V | 2A, 2A | Non-Inverting | 114 V | 10ns, 10ns | -40°C ~ 125°C (TA) | Surface Mount |
|
LT8672EDDB#TRMPBFIC GATE DRVR HIGH-SIDE 10DFN Analog Devices Inc. |
3,579 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | High-Side | Single | 1 | N-Channel MOSFET | 3V ~ 42V | - | - | Non-Inverting | - | - | -40°C ~ 125°C (TJ) | Surface Mount |
|
IRS2334MTRPBFIC GATE DRVR HALF-BRIDGE 28MLPQ Infineon Technologies |
2,145 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
LT8672HDDB#TRMPBFIC GATE DRVR HIGH-SIDE 10DFN Analog Devices Inc. |
3,991 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | High-Side | Single | 1 | N-Channel MOSFET | 3V ~ 42V | - | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
LT8672JDDB#TRMPBFIC GATE DRVR HIGH-SIDE 10DFN Analog Devices Inc. |
3,518 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | High-Side | Single | 1 | N-Channel MOSFET | 3V ~ 42V | - | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
LM25101AM/NOPBIC GATE DRVR HALF-BRIDGE 8SOIC Texas Instruments |
3,618 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 2.3V, - | 3A, 3A | Non-Inverting | 100 V | 430ns, 260ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
IR21364STRPBFIC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies |
3,534 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 11.5V ~ 20V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IRS2336DMTRPBFIC GATE DRVR HALF-BRIDGE 48MLPQ Infineon Technologies |
2,818 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 200mA, 350mA | Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
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