PMIC - Drivers de porta

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
IR2133J

IR2133J

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies
3,616 -

RFQ

IR2133J

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 90ns, 40ns 125°C (TJ) Surface Mount
IR2136

IR2136

IC GATE DRVR HALF-BRIDGE 28DIP

Infineon Technologies
3,105 -

RFQ

IR2136

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 200mA, 350mA Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR2153

IR2153

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
2,678 -

RFQ

IR2153

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 N-Channel MOSFET 10V ~ 15.6V - - RC Input Circuit 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
IR2233J

IR2233J

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies
2,075 -

RFQ

IR2233J

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2V 250mA, 500mA Inverting 1200 V 90ns, 40ns 125°C (TJ) Surface Mount
IR2101S

IR2101S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,700 -

RFQ

IR2101S

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Non-Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2102

IR2102

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
2,100 -

RFQ

IR2102

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR21064

IR21064

IC GATE DRVR HI/LOW SIDE 14DIP

Infineon Technologies
2,399 -

RFQ

IR21064

Ficha técnica

Tube - Obsolete High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR21064S

IR21064S

IC GATE DRVR HI/LOW SIDE 14SOIC

Infineon Technologies
3,697 -

RFQ

IR21064S

Ficha técnica

Tube - Obsolete High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2106S

IR2106S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
3,288 -

RFQ

IR2106S

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR21074

IR21074

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies
3,348 -

RFQ

IR21074

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 200mA, 350mA Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR21074S

IR21074S

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies
2,875 -

RFQ

IR21074S

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 200mA, 350mA Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2107S

IR2107S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,332 -

RFQ

IR2107S

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 200mA, 350mA Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
98-0255

98-0255

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies
3,033 -

RFQ

98-0255

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
98-0317

98-0317

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies
2,172 -

RFQ

98-0317

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2108S

IR2108S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
3,760 -

RFQ

IR2108S

Ficha técnica

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2109

IR2109

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
2,282 -

RFQ

IR2109

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR21094

IR21094

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies
2,132 -

RFQ

IR21094

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR21094S

IR21094S

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies
3,815 -

RFQ

IR21094S

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2109S

IR2109S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,677 -

RFQ

IR2109S

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2109STR

IR2109STR

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
3,941 -

RFQ

IR2109STR

Ficha técnica

Tape & Reel (TR) - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
Total 960 Record«Prev1... 2425262728293031...48Next»
Daily average RFQ Volume
1500+ Média diária de RFQ
Standard Product Unit
20,000.000 Unidade padrão do produto
Worldwide Manufacturers
1800+ Fabricantes em todo o mundo
In-stock Warehouse
15,000+ Armazém em estoque
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