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PMIC - Drivers de porta
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IR1175IC GATE DRVR LOW-SIDE 20DIP Infineon Technologies |
2,266 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4V ~ 5.5V | - | 2A, 2A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole |
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IR1176IC GATE DRVR LOW-SIDE 20DIP Infineon Technologies |
2,395 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Low-Side | Single | 1 | N-Channel MOSFET | 4V ~ 5.25V | - | 4A, 4A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR21271SIC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies |
3,179 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 9V ~ 20V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
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IR1176SIC GATE DRVR LOW-SIDE 20SSOP Infineon Technologies |
2,708 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Low-Side | Single | 1 | N-Channel MOSFET | 4V ~ 5.25V | - | 4A, 4A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR21271IC GATE DRV HI-SIDE/LO-SIDE 8DIP Infineon Technologies |
2,002 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 9V ~ 20V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR21814SIC GATE DRVR HALF-BRIDGE 14SOIC Infineon Technologies |
3,888 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount |
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IR2181IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
3,433 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR21814IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies |
3,501 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole |
|
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IR2183SIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
3,204 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.7V | 1.9A, 2.3A | Inverting, Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2181SIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
3,520 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2183IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
3,985 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.7V | 1.9A, 2.3A | Inverting, Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR1175STRIC GATE DRVR LOW-SIDE 20SSOP Infineon Technologies |
3,366 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4V ~ 5.5V | - | 2A, 2A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR1176STRIC GATE DRVR LOW-SIDE 20SSOP Infineon Technologies |
2,876 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Low-Side | Single | 1 | N-Channel MOSFET | 4V ~ 5.25V | - | 4A, 4A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR21064STRIC GATE DRVR HI/LOW SIDE 14SOIC Infineon Technologies |
2,280 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2106STRIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
2,771 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR21084STRIC GATE DRVR HALF-BRIDGE 14SOIC Infineon Technologies |
3,017 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2108STRIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
2,773 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR21271STRIC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies |
2,811 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 9V ~ 20V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR21362JTRIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
3,737 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 11.5V ~ 20V | 0.8V, 3V | 200mA, 350mA | Inverting, Non-Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR21362STRIC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies |
2,252 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 11.5V ~ 20V | 0.8V, 3V | 200mA, 350mA | Inverting, Non-Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
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