Tiristores - SCRs

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus Voltage-OffState Voltage-GateTrigger(Vgt)(Max) Current-GateTrigger(Igt)(Max) Voltage-OnState(Vtm)(Max) Current-OnState(It(AV))(Max) Current-OnState(It(RMS))(Max) Current-Hold(Ih)(Max) Current-OffState(Max) Current-NonRepSurge5060Hz(Itsm) SCRType OperatingTemperature MountingType
VS-16RIA80M

VS-16RIA80M

SCR 800V 35A TO208AA

Vishay General Semiconductor - Diodes Division
2,687 -

RFQ

VS-16RIA80M

Ficha técnica

Tube - Active 800 V 2 V 60 mA 1.75 V 16 A 35 A 130 mA 10 mA 285A, 300A Standard Recovery -65°C ~ 125°C Chassis, Stud Mount
VS-16RIA120S90

VS-16RIA120S90

SCR 1.2KV 35A TO208AA

Vishay General Semiconductor - Diodes Division
2,491 -

RFQ

VS-16RIA120S90

Ficha técnica

Tube - Active 1.2 kV 2 V 60 mA 1.75 V 16 A 35 A 130 mA 10 mA 285A, 300A Standard Recovery -65°C ~ 125°C Chassis, Stud Mount
VS-22RIA120S90

VS-22RIA120S90

SCR 1.2KV 35A TO208AA

Vishay General Semiconductor - Diodes Division
2,394 -

RFQ

VS-22RIA120S90

Ficha técnica

Bulk - Active 1.2 kV 2 V 60 mA 1.7 V 22 A 35 A 130 mA 10 mA 335A, 355A Standard Recovery -65°C ~ 125°C Chassis, Stud Mount
VS-10RIA120

VS-10RIA120

SCR 1.2KV 25A TO208AA

Vishay General Semiconductor - Diodes Division
2,737 -

RFQ

VS-10RIA120

Ficha técnica

Bulk - Active 1.2 kV 2 V 60 mA 1.75 V 10 A 25 A 130 mA 10 mA 225A, 240A Standard Recovery -65°C ~ 125°C Chassis, Stud Mount
CNE60E2200TZ-TUB

CNE60E2200TZ-TUB

SCR 2.2KV 94A TO268AA

IXYS
2,498 -

RFQ

CNE60E2200TZ-TUB

Ficha técnica

Tube CNE60E2200TZ Active 2.2 kV 1.4 V 80 mA 2.52 V 60 A 94 A 100 mA - 720A, 780A Standard Recovery -40°C ~ 150°C (TJ) Surface Mount
CNA30E2200FB

CNA30E2200FB

SCR 2.2KV 47A I4-PAC

IXYS
3,307 -

RFQ

CNA30E2200FB

Ficha técnica

Tube CNA30E2200FB Active 2.2 kV 2.5 V 250 mA 3 V 30 A 47 A 300 mA 50 µA 200A Standard Recovery -10°C ~ 70°C (TJ) Through Hole
VS-50RIA100M

VS-50RIA100M

SCR 1KV 80A TO208AC

Vishay General Semiconductor - Diodes Division
3,041 -

RFQ

VS-50RIA100M

Ficha técnica

Bulk - Active 1 kV 2.5 V 100 mA 1.6 V 50 A 80 A 200 mA 15 mA 1200A, 1255A Standard Recovery -40°C ~ 125°C Chassis, Stud Mount
VS-50RIA120M

VS-50RIA120M

SCR 1.2KV 80A TO208AC

Vishay General Semiconductor - Diodes Division
3,286 -

RFQ

VS-50RIA120M

Ficha técnica

Bulk - Active 1.2 kV 2.5 V 100 mA 1.6 V 50 A 80 A 200 mA 15 mA 1200A, 1255A Standard Recovery -40°C ~ 125°C Chassis, Stud Mount
VS-50RIA20M

VS-50RIA20M

SCR 200V 80A TO208AC

Vishay General Semiconductor - Diodes Division
3,304 -

RFQ

VS-50RIA20M

Ficha técnica

Bulk - Active 200 V 2.5 V 100 mA 1.6 V 50 A 80 A 200 mA 15 mA 1200A, 1255A Standard Recovery -40°C ~ 125°C Chassis, Stud Mount
VS-50RIA40M

VS-50RIA40M

SCR 400V 80A TO208AC

Vishay General Semiconductor - Diodes Division
2,661 -

RFQ

VS-50RIA40M

Ficha técnica

Bulk - Active 400 V 2.5 V 100 mA 1.6 V 50 A 80 A 200 mA 15 mA 1200A, 1255A Standard Recovery -40°C ~ 125°C Chassis, Stud Mount
VS-50RIA60M

VS-50RIA60M

SCR 600V 80A TO208AC

Vishay General Semiconductor - Diodes Division
3,396 -

RFQ

VS-50RIA60M

Ficha técnica

Bulk - Active 600 V 2.5 V 100 mA 1.6 V 50 A 80 A 200 mA 15 mA 1200A, 1255A Standard Recovery -40°C ~ 125°C Chassis, Stud Mount
VS-50RIA80M

VS-50RIA80M

SCR 800V 80A TO208AC

Vishay General Semiconductor - Diodes Division
2,995 -

RFQ

VS-50RIA80M

Ficha técnica

Bulk - Active 800 V 2.5 V 100 mA 1.6 V 50 A 80 A 200 mA 15 mA 1200A, 1255A Standard Recovery -40°C ~ 125°C Chassis, Stud Mount
GA301

GA301

SCR

Microchip Technology
2,789 -

RFQ

Bulk - Active 100 V 750 mV 200 µA 1.5 V 100 A - 5 mA 10 mA - Standard Recovery 0°C ~ 125°C Through Hole
GA301A

GA301A

SCR

Microchip Technology
2,957 -

RFQ

Bulk - Active 100 V 750 mV 200 µA 1.5 V 100 A - 5 mA 10 mA - Standard Recovery 0°C ~ 125°C Through Hole
GA301AE3

GA301AE3

SCR 100V TO18

Microchip Technology
2,420 -

RFQ

Bulk - Active 100 V 750 mV 200 µA 1.5 V - - 5 mA 100 nA - Standard Recovery 0°C ~ 125°C Through Hole
GA301E3

GA301E3

SCR

Microchip Technology
3,229 -

RFQ

Bulk - Active 100 V 750 mV 200 µA 1.5 V - - 5 mA 100 nA - Standard Recovery 0°C ~ 125°C Through Hole
VS-80RIA40PBF

VS-80RIA40PBF

SCR 400V 125A TO209AC

Vishay General Semiconductor - Diodes Division
2,884 -

RFQ

VS-80RIA40PBF

Ficha técnica

Bulk - Active 400 V 2.5 V 120 mA 1.6 V 80 A 125 A 200 mA 15 mA 1600A, 1675A Standard Recovery -40°C ~ 125°C Chassis, Stud Mount
VS-81RIA40PBF

VS-81RIA40PBF

SCR 400V 125A TO209AC

Vishay General Semiconductor - Diodes Division
2,732 -

RFQ

VS-81RIA40PBF

Ficha técnica

Bulk - Active 400 V 2.5 V 120 mA 1.6 V 80 A 125 A 200 mA 15 mA 1600A, 1675A Standard Recovery -40°C ~ 125°C Chassis, Stud Mount
VS-81RIA80PBF

VS-81RIA80PBF

SCR 800V 125A TO209AC

Vishay General Semiconductor - Diodes Division
3,010 -

RFQ

VS-81RIA80PBF

Ficha técnica

Bulk - Active 800 V 2.5 V 120 mA 1.6 V 80 A 125 A 200 mA 15 mA 1600A, 1675A Standard Recovery -40°C ~ 125°C Chassis, Stud Mount
VS-80RIA40

VS-80RIA40

SCR 400V 125A TO209AC

Vishay General Semiconductor - Diodes Division
2,851 -

RFQ

VS-80RIA40

Ficha técnica

Bulk - Active 400 V 2.5 V 120 mA 1.6 V 80 A 125 A 200 mA 15 mA 1900A, 1990A Standard Recovery -40°C ~ 125°C Chassis, Stud Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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