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Transistores - Bipolar (BJT) - Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ZTX749ATRANS PNP 35V 2A TO226 Fairchild Semiconductor |
2,108 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 2 A | 35 V | 500mV @ 200mA, 2A | 100nA (ICBO) | 100 @ 1A, 2V | 1 W | 100MHz | -55°C ~ 150°C (TJ) | Through Hole |
|
2SC4260TI-TL-ESMALL SIGNAL BIPOLAR TRANSTR NPN Renesas Electronics America Inc |
3,363 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
BCU81-AABIP NPN 3A 10V onsemi |
2,491 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
2SA2088U3HZGT106QTRANS PNP 60V 0.5A UMT3 Rohm Semiconductor |
2,368 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | PNP | 500 mA | 60 V | 500mV @ 10mA, 100mA | 1µA (ICBO) | 120 @ 50mA, 2V | 200 mW | 400MHz | 150°C (TJ) | Surface Mount |
|
MCH3315-TL-ETRANSISTOR onsemi |
2,366 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
2SB892SSMALL SIGNAL BIPOLAR TRANS PNP onsemi |
2,726 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
NZT6717TRANS NPN 80V 1.2A SOT223-4 Fairchild Semiconductor |
2,532 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | NPN | 1.2 A | 80 V | 350mV @ 10mA, 250mA | 100nA (ICBO) | 50 @ 250mA, 1V | 1 W | - | -55°C ~ 150°C (TJ) | Surface Mount |
|
MPSA13TRANS NPN DARL 30V 0.5A TO92 NTE Electronics, Inc |
2,482 | - |
RFQ |
Ficha técnica |
Bag | - | Active | NPN - Darlington | 500 mA | 30 V | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 10000 @ 100mA, 5V | 625 mW | 125MHz | -55°C ~ 150°C (TJ) | Through Hole |
|
MMBT5551TRANS NPN 160V 0.6A SOT23-3 NTE Electronics, Inc |
2,812 | - |
RFQ |
Ficha técnica |
Bag | - | Active | NPN | 600 mA | 160 V | 200mV @ 5mA, 50mA | 50nA (ICBO) | 80 @ 10mA, 5V | 350 mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
MCH3211-TL-EBIP NPN 3A 10V onsemi |
2,617 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
CPH3210-TL-ETRANSISTOR FOR SET-UP DC-DC CONV onsemi |
2,648 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
CPH3210-TL-E-SYTRANSISTOR FOR SET-UP DC-DC CONV Sanyo |
3,389 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
2SC3651-OTE-TD-EBIP NPN 0.2A 100V onsemi |
2,999 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
2SC2619FCTR-ESMALL SIGNAL BIPOLAR TRANSISTOR Renesas Electronics America Inc |
2,830 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
2SC3784POWER BIPOLAR TRANSISTOR NPN onsemi |
3,153 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
BCV62B/DG/B2215SMALL SIGNAL BIPOLAR TRANSISTOR NXP USA Inc. |
3,276 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
2SC5850LCTL-ESMALL SIGNAL BIPOLAR TRANSTR NPN Renesas Electronics America Inc |
2,919 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
2SB1274R-SA-ONPNP EPITAXIAL PLANAR SILICON onsemi |
2,767 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
2SA1246T-AASMALL SIGNAL BIPOLAR TRANSISTOR onsemi |
3,077 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
2SB1120G-TD-EBIP PNP 2.5A 10V onsemi |
3,087 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
- 1500+ Média diária de RFQ
- 20,000.000 Unidade padrão do produto
- 1800+ Fabricantes em todo o mundo
- 15,000+ Armazém em estoque
