Transistores - Bipolar (BJT) - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2N760A

2N760A

SMALL-SIGNAL BJT

Microchip Technology
3,285 -

RFQ

Bulk * Active - - - - - - - - - -
2N5050

2N5050

NPN SILICON TRANSISTOR

Microchip Technology
3,034 -

RFQ

Bulk * Active - - - - - - - - - -
2N5051

2N5051

NPN SILICON TRANSISTOR

Microchip Technology
3,314 -

RFQ

Bulk * Active - - - - - - - - - -
2N5052

2N5052

NPN SILICON TRANSISTOR

Microchip Technology
3,469 -

RFQ

Bulk * Active - - - - - - - - - -
2N6299E3

2N6299E3

TRANS PNP DARL 80V 500UA TO66

Microchip Technology
3,402 -

RFQ

Bulk - Active PNP - Darlington 500 µA 80 V 2V @ 80mA, 8A 500µA 500 @ 1A, 3V 64 W - -65°C ~ 200°C (TJ) Through Hole
2N6301E3

2N6301E3

TRANS NPN DARL 80V 500UA TO66

Microchip Technology
2,603 -

RFQ

Bulk - Active NPN - Darlington 500 µA 80 V 3V @ 80mA, 8A 500µA 750 @ 4A, 3V 75 W - -55°C ~ 200°C (TJ) Through Hole
2N3661

2N3661

SMALL-SIGNAL BJT

Microchip Technology
2,811 -

RFQ

Bulk - Active PNP 1.5 A 50 V - - - 5 W - - Through Hole
2N3675

2N3675

SMALL-SIGNAL BJT

Microchip Technology
2,243 -

RFQ

Bulk - Active PNP 3 A 55 V - - - 8 W - -65°C ~ 200°C (TJ) Through Hole
2N3619

2N3619

SMALL-SIGNAL BJT

Microchip Technology
2,783 -

RFQ

Bulk - Active PNP 2 A 40 V - - - 7 W - -65°C ~ 200°C (TJ) Through Hole
2N3660

2N3660

SMALL-SIGNAL BJT

Microchip Technology
3,187 -

RFQ

Bulk - Active PNP 1.5 A 30 V - - - 5 W - - Through Hole
2N3676

2N3676

SMALL-SIGNAL BJT

Microchip Technology
3,586 -

RFQ

Bulk - Active NPN 3 A 90 V 800mV @ 100µA, 1mA - - 8 W - -65°C ~ 200°C (TJ) Through Hole
2N3628

2N3628

POWER BJT

Microchip Technology
2,368 -

RFQ

Bulk - Active NPN 5 A 40 V - - - 7 W - -65°C ~ 200°C (TJ) Through Hole
2N3623

2N3623

POWER BJT

Microchip Technology
3,081 -

RFQ

Bulk - Active PNP 5 A 40 V - - - 7 W - -65°C ~ 200°C (TJ) Through Hole
2N3627

2N3627

POWER BJT

Microchip Technology
2,300 -

RFQ

Bulk - Active PNP 2 A 50 V - - - 7 W - -65°C ~ 200°C (TJ) Through Hole
2N3620

2N3620

SMALL-SIGNAL BJT

Microchip Technology
2,258 -

RFQ

Bulk - Active PNP 2.5 A 40 V - - - 7.5 W - - Through Hole
JANTX2N918UB/TR

JANTX2N918UB/TR

TRANS NPN 15V 0.05A UB

Microchip Technology
2,390 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/301 Active NPN 50 mA 15 V 400mV @ 1mA, 10mA 1µA (ICBO) 20 @ 3mA, 1V 200 mW - -65°C ~ 200°C (TJ) Surface Mount
2N6316

2N6316

PNP TRANSISTOR

Microchip Technology
3,176 -

RFQ

2N6316

Ficha técnica

Bulk * Active - - - - - - - - - -
2N2906AUA/TR

2N2906AUA/TR

TRANS PNP 60V 0.6A 4SMD

Microchip Technology
2,711 -

RFQ

Tape & Reel (TR) - Active PNP 600 mA 60 V 1.6V @ 50mA, 500mA 50nA 40 @ 150mA, 10V 500 mW - -65°C ~ 200°C (TJ) Surface Mount
2N3766

2N3766

TRANS NPN 60V 500UA TO66

Microchip Technology
2,027 -

RFQ

Bulk - Active NPN 500 µA 60 V 2.5V @ 100mA, 1A 500µA 40 @ 500mA, 5V 25 W - -65°C ~ 200°C (TJ) Through Hole
2N3767

2N3767

TRANS NPN 80V 500UA TO66

Microchip Technology
2,001 -

RFQ

Bulk - Active NPN 500 µA 80 V 2.5V @ 100mA, 1A 500µA 40 @ 500mA, 5V 25 W - -65°C ~ 200°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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