Transistores - Bipolar (BJT) - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2N4236L

2N4236L

POWER BJT

Microchip Technology
3,174 -

RFQ

Bulk Military, MIL-PRF-19500/580 Active PNP 1 A 80 V 600mV @ 100mA, 1A 1mA 40 @ 100mA, 1V 1 W - -65°C ~ 200°C (TJ) Through Hole
2N5597

2N5597

POWER BJT

Microchip Technology
2,987 -

RFQ

Bulk - Active PNP 2 A 60 V - - - 20 W - - Through Hole
2N5599

2N5599

POWER BJT

Microchip Technology
3,414 -

RFQ

Bulk - Active PNP 2 A 80 V 850mV @ 200µA, 1mA - - 20 W - -65°C ~ 200°C (TJ) Through Hole
2N5612

2N5612

POWER BJT

Microchip Technology
2,108 -

RFQ

Bulk - Active NPN 5 A 100 V - - - 25 W - - Through Hole
2N5611

2N5611

POWER BJT

Microchip Technology
2,297 -

RFQ

Bulk - Active PNP 5 A 100 V - - - 25 W - - Through Hole
2N5609

2N5609

POWER BJT

Microchip Technology
3,160 -

RFQ

Bulk - Active PNP 5 A 80 V 750mV @ 250µA, 2.5mA - - 25 W - -65°C ~ 200°C (TJ) Through Hole
2N5607

2N5607

POWER BJT

Microchip Technology
2,912 -

RFQ

Bulk - Active PNP 5 A 80 V - - - 25 W - - Through Hole
2N5605

2N5605

POWER BJT

Microchip Technology
3,080 -

RFQ

Bulk - Active PNP 5 A 60 V 750mV @ 250µA, 2.5mA - - 25 W - -65°C ~ 200°C (TJ) Through Hole
2N5610

2N5610

POWER BJT

Microchip Technology
2,665 -

RFQ

Bulk - Active PNP 5 A 80 V 1.5V @ 500µA, 2.5mA - - 25 W - -65°C ~ 200°C (TJ) Through Hole
2N5601

2N5601

POWER BJT

Microchip Technology
2,082 -

RFQ

Bulk - Active PNP 2 A 80 V 850mV @ 200µA, 1mA - - 20 W - -65°C ~ 200°C (TJ) Through Hole
2N5602

2N5602

POWER BJT

Microchip Technology
2,418 -

RFQ

Bulk - Active PNP 2 A 80 V 850mV @ 200µA, 1mA - - 20 W - -65°C ~ 200°C (TJ) Through Hole
2N5606

2N5606

POWER BJT

Microchip Technology
3,841 -

RFQ

Bulk - Active NPN 5 A 60 V 1.5V @ 500µA, 2.5mA - - 25 W - -65°C ~ 200°C (TJ) Through Hole
2N5598

2N5598

POWER BJT

Microchip Technology
3,954 -

RFQ

Bulk - Active PNP 2 A 60 V 850mV @ 200µA, 1mA - - 20 W - -65°C ~ 200°C (TJ) Through Hole
2N5600

2N5600

POWER BJT

Microchip Technology
2,247 -

RFQ

Bulk - Active PNP 2 A 80 V - - - 20 W - - Through Hole
2N5603

2N5603

POWER BJT

Microchip Technology
3,371 -

RFQ

Bulk - Active PNP 2 A 100 V 850mV @ 200µA, 1mA - - 20 W - -65°C ~ 200°C (TJ) Through Hole
2N5604

2N5604

POWER BJT

Microchip Technology
2,115 -

RFQ

Bulk - Active NPN 2 A 100 V - - - 20 W - - Through Hole
2N5608

2N5608

POWER BJT

Microchip Technology
2,463 -

RFQ

Bulk - Active PNP 5 A 80 V 1.5V @ 500µA, 2.5mA - - 25 W - -65°C ~ 200°C (TJ) Through Hole
JANSL2N3700UB

JANSL2N3700UB

RH SMALL-SIGNAL BJT

Microchip Technology
3,967 -

RFQ

Bulk Military, MIL-PRF-19500/391 Active NPN 1 A 80 V 500mV @ 50mA, 500mA 10nA 100 @ 150mA, 10V 500 mW - -65°C ~ 200°C (TJ) Surface Mount
JANSD2N3700UB

JANSD2N3700UB

RH SMALL-SIGNAL BJT

Microchip Technology
2,449 -

RFQ

Bulk Military, MIL-PRF-19500/391 Active NPN 1 A 80 V 500mV @ 50mA, 500mA 10nA 100 @ 150mA, 10V 500 mW - -65°C ~ 200°C (TJ) Surface Mount
JANSM2N3700UB

JANSM2N3700UB

RH SMALL-SIGNAL BJT

Microchip Technology
2,342 -

RFQ

Bulk Military, MIL-PRF-19500/391 Active NPN 1 A 80 V 500mV @ 50mA, 500mA 10nA 100 @ 150mA, 10V 500 mW - -65°C ~ 200°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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