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Transistores - Bipolar (BJT) - Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV2N6283TRANS NPN DARL 80V 20A TO204AA Microchip Technology |
3,927 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/504 | Active | NPN - Darlington | 20 A | 80 V | 3V @ 200mA, 20A | 1mA | 1250 @ 10A, 3V | 175 W | - | -65°C ~ 200°C (TJ) | Through Hole |
|
|
2N6354POWER BJT Microchip Technology |
3,418 | - |
RFQ |
Bulk | - | Active | NPN | 10 A | 120 V | 1V @ 1A, 10A | - | 10 @ 10A, 2V | 140 W | 60MHz | - | Through Hole | |
|
|
2N3765UAPOWER BJT Microchip Technology |
3,308 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/396 | Active | PNP | 1.5 A | 60 V | 900mV @ 100mA, 1A | 100µA | 20 @ 1.5A, 5V | 500 mW | - | -55°C ~ 200°C (TJ) | Surface Mount | |
|
|
2N3765UA/TRPOWER BJT Microchip Technology |
2,288 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/396 | Active | PNP | 1.5 A | 60 V | 900mV @ 100mA, 1A | 100µA | 20 @ 1.5A, 5V | 500 mW | - | -55°C ~ 200°C (TJ) | Surface Mount | |
|
2N5867TRANS PNP 60V 5A TO3 Microchip Technology |
3,514 | - |
RFQ |
Bulk | - | Active | PNP | 5 A | 60 V | - | - | - | 87.5 W | - | - | Through Hole | |
|
|
2N5868PNP POWER TRANSISTOR SILICON AMP Microchip Technology |
2,707 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
2N5871PNP POWER TRANSISTOR SILICON AMP Microchip Technology |
2,993 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
2N5872PNP POWER TRANSISTOR SILICON AMP Microchip Technology |
2,846 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
2N5877PNP POWER TRANSISTOR SILICON AMP Microchip Technology |
3,249 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
2N5879PNP POWER TRANSISTOR SILICON AMP Microchip Technology |
3,709 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
2N5884PNP POWER TRANSISTOR SILICON AMP Microchip Technology |
2,795 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
2N5885PNP POWER TRANSISTOR SILICON AMP Microchip Technology |
2,850 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
2N5886PNP POWER TRANSISTOR SILICON AMP Microchip Technology |
3,864 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
2N5931POWER BJT Microchip Technology |
2,772 | - |
RFQ |
Bulk | - | Active | PNP | 30 A | 160 V | - | - | - | 175 W | - | - | Through Hole | |
|
|
2N5936POWER BJT Microchip Technology |
2,265 | - |
RFQ |
Bulk | - | Active | NPN | 30 A | 120 V | - | - | - | 175 W | - | - | Through Hole | |
|
|
2N5935POWER BJT Microchip Technology |
3,011 | - |
RFQ |
Bulk | - | Active | NPN | 30 A | 80 V | - | - | - | 175 W | - | -65°C ~ 200°C (TJ) | Through Hole | |
|
|
JANS2N2906AUBTRANS PNP 60V 0.6A UB Microchip Technology |
2,258 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/291 | Active | PNP | 600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 40 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount |
|
|
2N5067POWER BJT Microchip Technology |
2,259 | - |
RFQ |
Bulk | - | Active | PNP | 5 A | 40 V | - | - | - | 87.5 W | - | - | Through Hole | |
|
|
2N5069POWER BJT Microchip Technology |
2,522 | - |
RFQ |
Bulk | - | Active | NPN | 5 A | 80 V | - | - | - | 87 W | - | -65°C ~ 200°C (TJ) | Through Hole | |
|
|
2N5068POWER BJT Microchip Technology |
3,833 | - |
RFQ |
Bulk | - | Active | PNP | 5 A | 60 V | - | - | - | 87 W | - | -65°C ~ 200°C (TJ) | Through Hole |
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