Transistores - Bipolar (BJT) - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2N6668

2N6668

TRANS PNP DARL 80V 10A TO220

NTE Electronics, Inc
840 -

RFQ

2N6668

Ficha técnica

Bag - Active PNP - Darlington 10 A 80 V 3V @ 100mA, 10A 1mA 1000 @ 5A, 3V 65 W - 150°C (TJ) Through Hole
NTE159

NTE159

TRANS PNP 80V 0.8A TO92

NTE Electronics, Inc
3,606 -

RFQ

NTE159

Ficha técnica

Bag - Active PNP 800 mA 80 V 500mV @ 50mA, 500mA 50nA (ICBO) 50 @ 10mA, 10V 625 mW - -55°C ~ 150°C (TJ) Through Hole
NTE11

NTE11

TRANS NPN 20V 5A TO92

NTE Electronics, Inc
3,407 -

RFQ

NTE11

Ficha técnica

Bag - Active NPN 5 A 20 V 1V @ 100mA, 3A 100nA (ICBO) 340 @ 500mA, 2V 750 mW 150MHz 150°C (TJ) Through Hole
NTE2426

NTE2426

TRANS NPN DARL 80V 0.5A SOT89

NTE Electronics, Inc
2,218 -

RFQ

NTE2426

Ficha técnica

Bag - Active NPN - Darlington 500 mA 80 V 1.3V @ 500µA, 500mA 10µA 2000 @ 500mA, 10V 1 W - 150°C (TJ) Surface Mount
NTE294

NTE294

TRANS PNP 50V 1A TO92L

NTE Electronics, Inc
650 -

RFQ

NTE294

Ficha técnica

Bag - Active PNP 1 A 50 V 400mV @ 50mA, 500mA 100nA (ICBO) 120 @ 500mA, 10V 1 W 200MHz 150°C (TJ) Through Hole
2N3714

2N3714

TRANS NPN 80V 10A TO3

NTE Electronics, Inc
182 -

RFQ

2N3714

Ficha técnica

Bag - Active NPN 10 A 80 V 1V @ 500mA, 5A 1mA 25 @ 1A, 2V 150 W 4MHz -65°C ~ 200°C (TJ) Through Hole
MJE13007

MJE13007

TRANS NPN 400V 8A TO220

NTE Electronics, Inc
125 -

RFQ

MJE13007

Ficha técnica

Bag SWITCHMODE™ Active NPN 8 A 400 V 3V @ 2A, 8A 100µA 5 @ 5A, 5V 80 W 14MHz -65°C ~ 150°C (TJ) Through Hole
NTE2427

NTE2427

TRANS PNP DARL 80V 0.5A SOT89

NTE Electronics, Inc
2,868 -

RFQ

NTE2427

Ficha técnica

Bag - Active PNP - Darlington 500 mA 80 V 1.3V @ 500µA, 500mA 10µA 2000 @ 500mA, 10V 1 W - 150°C (TJ) Surface Mount
TIP3055

TIP3055

TRANS NPN 100V 15A TO218

NTE Electronics, Inc
3,687 -

RFQ

TIP3055

Ficha técnica

Bag - Active NPN 15 A 100 V - - 20 @ 4A, 4V 90 W 3MHz - Through Hole
NTE2363

NTE2363

TRANS NPN 50V 2A TO92L

NTE Electronics, Inc
200 -

RFQ

NTE2363

Ficha técnica

Bag - Active NPN 2 A 50 V 400mV @ 50mA, 1A 100nA (ICBO) 140 @ 100mA, 2V 1 W 150MHz 150°C (TJ) Through Hole
2SC4428M

2SC4428M

NPN SILICON TRANSISTOR

onsemi
3,831 -

RFQ

2SC4428M

Ficha técnica

Bulk * Active - - - - - - - - - -
NTE14

NTE14

TRANS PNP 80V 0.7A 3SIP

NTE Electronics, Inc
255 -

RFQ

NTE14

Ficha técnica

Bag - Active PNP 700 mA 80 V 400mV @ 50mA, 500mA 500nA (ICBO) 120 @ 100mA, 3V 750 mW 100MHz 135°C (TJ) Through Hole
2SD986(1)-AZ

2SD986(1)-AZ

SMALL SIGNAL BIPOLAR TRANSTR NPN

Renesas Electronics America Inc
2,093 -

RFQ

Bulk * Active - - - - - - - - - -
NTE46

NTE46

TRANS NPN DARL 100V 0.5A TO92

NTE Electronics, Inc
119 -

RFQ

NTE46

Ficha técnica

Bag - Active NPN - Darlington 500 mA 100 V 1.5V @ 100µA, 100mA 500nA 10000 @ 100mA, 5V 625 mW 200MHz -55°C ~ 150°C (TJ) Through Hole
NTE193A

NTE193A

TRANS PNP 50V 0.5A TO92HS

NTE Electronics, Inc
2,973 -

RFQ

NTE193A

Ficha técnica

Bag - Active PNP 500 mA 50 V 300mV @ 3mA, 50mA 100nA (ICBO) 180 @ 2mA, 4.5V 560 mW - 150°C (TJ) Through Hole
NTE373

NTE373

TRANS NPN 160V 1.5A TO126

NTE Electronics, Inc
618 -

RFQ

NTE373

Ficha técnica

Bag - Active NPN 1.5 A 160 V 1V @ 50mA, 500mA 10µA (ICBO) 60 @ 150mA, 5V 1 W 140MHz 150°C (TJ) Through Hole
NTE2430

NTE2430

TRANS NPN 350V 1A SOT89

NTE Electronics, Inc
512 -

RFQ

NTE2430

Ficha técnica

Bag - Active NPN 1 A 350 V 500mV @ 4mA, 50mA 20nA 40 @ 20mA, 10V 1 W 70MHz 150°C (TJ) Surface Mount
NTE291

NTE291

TRANS NPN 120V 4A TO220

NTE Electronics, Inc
194 -

RFQ

NTE291

Ficha técnica

Bag - Active NPN 4 A 120 V 2.5V @ 2A, 4A 1mA 15 @ 1.5A, 4V 1.8 W 4MHz -65°C ~ 150°C Through Hole
NTE192

NTE192

TRANS NPN 50V 0.5A TO92HS

NTE Electronics, Inc
639 -

RFQ

NTE192

Ficha técnica

Bag - Active NPN 500 mA 50 V 300mV @ 3mA, 50mA 100nA (ICBO) 180 @ 2mA, 4.5V 560 mW - 150°C (TJ) Through Hole
RJK0349DPA-01#J0

RJK0349DPA-01#J0

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
2,585 -

RFQ

Bulk * Active - - - - - - - - - -
Total 23278 Record«Prev1... 148149150151152153154155...1164Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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