Transistores - Bipolar (BJT) - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SC4604,F(J

2SC4604,F(J

TRANS NPN 50V 3A TO92MOD

Toshiba Semiconductor and Storage
3,294 -

RFQ

2SC4604,F(J

Ficha técnica

Bulk - Obsolete NPN 3 A 50 V 500mV @ 75mA, 1.5A 100nA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SC4604,T6F(J

2SC4604,T6F(J

TRANS NPN 50V 3A TO92MOD

Toshiba Semiconductor and Storage
2,122 -

RFQ

2SC4604,T6F(J

Ficha técnica

Bulk - Obsolete NPN 3 A 50 V 500mV @ 75mA, 1.5A 100nA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SC4604,T6F(M

2SC4604,T6F(M

TRANS NPN 50V 3A TO92MOD

Toshiba Semiconductor and Storage
2,729 -

RFQ

2SC4604,T6F(M

Ficha técnica

Bulk - Obsolete NPN 3 A 50 V 500mV @ 75mA, 1.5A 100nA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SC4682,T6CSF(J

2SC4682,T6CSF(J

TRANS NPN 15V 3A TO92MOD

Toshiba Semiconductor and Storage
3,278 -

RFQ

2SC4682,T6CSF(J

Ficha técnica

Bulk - Obsolete NPN 3 A 15 V 500mV @ 30mA, 3A 1µA (ICBO) 800 @ 500mA, 1V 900 mW 150MHz 150°C (TJ) Through Hole
2SC4682,T6F(J

2SC4682,T6F(J

TRANS NPN 15V 3A TO92MOD

Toshiba Semiconductor and Storage
2,205 -

RFQ

2SC4682,T6F(J

Ficha técnica

Bulk - Obsolete NPN 3 A 15 V 500mV @ 30mA, 3A 1µA (ICBO) 800 @ 500mA, 1V 900 mW 150MHz 150°C (TJ) Through Hole
2SC4793(LBSAN,F,M)

2SC4793(LBSAN,F,M)

TRANS NPN 230V 1A TO220NIS

Toshiba Semiconductor and Storage
3,192 -

RFQ

2SC4793(LBSAN,F,M)

Ficha técnica

Bulk - Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) Through Hole
2SC4793(PAIO,F,M)

2SC4793(PAIO,F,M)

TRANS NPN 230V 1A TO220NIS

Toshiba Semiconductor and Storage
3,344 -

RFQ

2SC4793(PAIO,F,M)

Ficha técnica

Bulk - Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) Through Hole
2SC4793,F(J

2SC4793,F(J

TRANS NPN 230V 1A TO220NIS

Toshiba Semiconductor and Storage
3,143 -

RFQ

2SC4793,F(J

Ficha técnica

Bulk - Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) Through Hole
2SC4793,HFEF(J

2SC4793,HFEF(J

TRANS NPN 230V 1A TO220NIS

Toshiba Semiconductor and Storage
3,685 -

RFQ

2SC4793,HFEF(J

Ficha técnica

Bulk - Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) Through Hole
2SC4793,HFEF(M

2SC4793,HFEF(M

TRANS NPN 230V 1A TO220NIS

Toshiba Semiconductor and Storage
2,995 -

RFQ

2SC4793,HFEF(M

Ficha técnica

Bulk - Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) Through Hole
2SC4793,NSEIKIF(J

2SC4793,NSEIKIF(J

TRANS NPN 230V 1A TO220NIS

Toshiba Semiconductor and Storage
3,920 -

RFQ

2SC4793,NSEIKIF(J

Ficha técnica

Bulk - Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) Through Hole
2SC4793,TOA1F(J

2SC4793,TOA1F(J

TRANS NPN 230V 1A TO220NIS

Toshiba Semiconductor and Storage
2,613 -

RFQ

2SC4793,TOA1F(J

Ficha técnica

Bulk - Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) Through Hole
2SC4793,WNLF(J

2SC4793,WNLF(J

TRANS NPN 230V 1A TO220NIS

Toshiba Semiconductor and Storage
3,306 -

RFQ

2SC4793,WNLF(J

Ficha técnica

Bulk - Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) Through Hole
2SC4793,YHF(J

2SC4793,YHF(J

TRANS NPN 230V 1A TO220NIS

Toshiba Semiconductor and Storage
2,690 -

RFQ

2SC4793,YHF(J

Ficha técnica

Bulk - Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) Through Hole
2SC4793,YHF(M

2SC4793,YHF(M

TRANS NPN 230V 1A TO220NIS

Toshiba Semiconductor and Storage
3,535 -

RFQ

2SC4793,YHF(M

Ficha técnica

Bulk - Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) Through Hole
2SC4881(CANO,F,M)

2SC4881(CANO,F,M)

TRANS NPN 50V 5A TO220NIS

Toshiba Semiconductor and Storage
3,603 -

RFQ

2SC4881(CANO,F,M)

Ficha técnica

Bulk - Obsolete NPN 5 A 50 V 400mV @ 125mA, 2.5A 1µA (ICBO) 100 @ 1A, 1V 2 W 100MHz 150°C (TJ) Through Hole
2SC4881,LS1SUMIF(M

2SC4881,LS1SUMIF(M

TRANS NPN 50V 5A TO220NIS

Toshiba Semiconductor and Storage
3,410 -

RFQ

2SC4881,LS1SUMIF(M

Ficha técnica

Bulk - Obsolete NPN 5 A 50 V 400mV @ 125mA, 2.5A 1µA (ICBO) 100 @ 1A, 1V 2 W 100MHz 150°C (TJ) Through Hole
2SC4935-Y,Q(J

2SC4935-Y,Q(J

TRANS NPN 50V 3A TO220NIS

Toshiba Semiconductor and Storage
2,239 -

RFQ

2SC4935-Y,Q(J

Ficha técnica

Bulk - Obsolete NPN 3 A 50 V 600mV @ 200mA, 2A 1µA (ICBO) 70 @ 500mA, 2V 2 W 80MHz 150°C (TJ) Through Hole
2SC5171(LBS2MATQ,M

2SC5171(LBS2MATQ,M

TRANS NPN 180V 2A TO220NIS

Toshiba Semiconductor and Storage
2,967 -

RFQ

2SC5171(LBS2MATQ,M

Ficha técnica

Bulk - Obsolete NPN 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) Through Hole
2SC5171(ONK,Q,M)

2SC5171(ONK,Q,M)

TRANS NPN 180V 2A TO220NIS

Toshiba Semiconductor and Storage
2,118 -

RFQ

2SC5171(ONK,Q,M)

Ficha técnica

Bulk - Obsolete NPN 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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